Dai; Chang-Ming

Patent Applications and Registrations

Patent applications and USPTO patent grants for Dai; Chang-Ming.The latest application filed is for "photomask blank and photomask".

Company Profile

0.16.6

Dai; Chang-Ming - Miaoli County TW
Dai; Chang-Ming - Hsinchu TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Photomask Blank And Photomask App 20170153540 - Dai; Chang-Ming	2017-06-01
Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era Grant 7,131,102 - Dai , et al. October 31, 2	2006-10-31
Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era Grant 7,036,108 - Dai , et al. April 25, 2	2006-04-25
Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution ERA Grant 7,013,453 - Dai , et al. March 14, 2	2006-03-14
Single trench alternating phase shift mask fabrication Grant 6,830,702 - Tzu , et al. December 14, 2	2004-12-14
Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era App 20040168147 - Dai, Chang-Ming ; et al.	2004-08-26
Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution ERA App 20040168146 - Dai, Chang-Ming ; et al.	2004-08-26
Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era App 20040161679 - Dai, Chang-Ming ; et al.	2004-08-19
Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era Grant 6,711,732 - Dai , et al. March 23, 2	2004-03-23
Single trench alternating phase shift mask fabrication App 20030226819 - Tzu, San-De ; et al.	2003-12-11
Dual trench alternating phase shift mask fabrication Grant 6,660,653 - Tzu , et al. December 9, 2	2003-12-09
Dual Trench Alternating Phase Shift Mask Fabrication App 20030219990 - Tzu, San-De ; et al.	2003-11-27
Elimination of proximity effect in photoresist Grant 6,291,118 - Gau , et al. September 18, 2	2001-09-18
Single-mask dual damascene processes by using phase-shifting mask Grant 6,180,512 - Dai January 30, 2	2001-01-30
Two-layered TSI process for dual damascene patterning Grant 5,935,762 - Dai , et al. August 10, 1	1999-08-10
Method of self-aligned dual damascene patterning using developer soluble arc interstitial layer Grant 5,882,996 - Dai March 16, 1	1999-03-16
Dual damascene process using single photoresist process Grant 5,877,075 - Dai , et al. March 2, 1	1999-03-02
Opposed two-layered photoresist process for dual damascene patterning Grant 5,877,076 - Dai March 2, 1	1999-03-02
Method for fabricating a sub-half micron MOSFET device with global planarization of insulator filled shallow trenches, via the use of a bottom anti-reflective coating Grant 5,710,076 - Dai , et al. January 20, 1	1998-01-20
Method for fabricating a sub-half micron MOSFET device with insulator filled shallow trenches planarized via use of negative photoresist and de-focus exposure Grant 5,691,215 - Dai , et al. November 25, 1	1997-11-25
Method for making self-aligned bit line contacts on a DRAM circuit having a planarized insulating layer Grant 5,670,404 - Dai September 23, 1	1997-09-23
Reduced notching of polycide gates using silicon anti reflection layer Grant 5,604,157 - Dai , et al. February 18, 1	1997-02-18

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