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Patent applications and USPTO patent grants for d'Heurle; Francois M..The latest application filed is for "method of forming a film for a multilayer semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogen".
Patent | Date |
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Method of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogen Grant 5,624,869 - Agnello , et al. April 29, 1 | 1997-04-29 |
Method for lowering the phase transformation temperature of a metal silicide Grant 5,510,295 - Cabral, Jr. , et al. April 23, 1 | 1996-04-23 |
Method for depositing interconnection metallurgy using low temperature alloy processes Grant 5,143,867 - d'Heurle , et al. September 1, 1 | 1992-09-01 |
Method of inhibiting hillock formation in films and film thereby and multilayer structure therewith Grant 4,012,756 - Chaudhari , et al. March 15, 1 | 1977-03-15 |
Copper doped aluminum conductive stripes and method therefor Grant 3,879,840 - Ames , et al. April 29, 1 | 1975-04-29 |
Copper Doped Aluminum Conductive Stripes Grant 3,725,309 - Ames , et al. April 3, 1 | 1973-04-03 |
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