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Memory device with low reset current
Grant 9,000,408 - Kostylev , et al. April 7, 2 | 2015-04-07 |
Memory device
Grant 8,796,101 - Czubatyj , et al. August 5, 2 | 2014-08-05 |
Variable resistance materials with superior data retention characteristics
Grant 8,685,291 - Schell , et al. April 1, 2 | 2014-04-01 |
Memory device and method of making same
Grant 8,581,223 - Czubatyj , et al. November 12, 2 | 2013-11-12 |
Multilevel variable resistance memory cell utilizing crystalline programming states
Grant 8,363,446 - Czubatyj , et al. January 29, 2 | 2013-01-29 |
Breakdown layer via lateral diffusion
Grant 8,350,661 - Czubatyj , et al. January 8, 2 | 2013-01-08 |
Memory device
Grant 8,344,348 - Wicker , et al. January 1, 2 | 2013-01-01 |
Phase change device with offset contact
Grant 8,344,350 - Czubatyj , et al. January 1, 2 | 2013-01-01 |
Memory Device
App 20120329237 - Czubatyj; Wolodymyr ; et al. | 2012-12-27 |
Memory device
Grant 8,269,208 - Czubatyj , et al. September 18, 2 | 2012-09-18 |
Phase change memory that switches between crystalline phases
Grant 8,178,385 - Czubatyj May 15, 2 | 2012-05-15 |
Memory Device and Method of Making Same
App 20110227027 - Czubatyj; Wolodymyr ; et al. | 2011-09-22 |
Method of programming multi-layer chalcogenide devices
Grant 8,000,125 - Sandoval , et al. August 16, 2 | 2011-08-16 |
Phase Change Device with Offset Contact
App 20110194340 - Czubatyj; Wolodymyr ; et al. | 2011-08-11 |
Temperature and pressure control methods to fill features with programmable resistance and switching devices
Grant 7,994,034 - Fournier , et al. August 9, 2 | 2011-08-09 |
Reduction of drift in phase-change memory via thermally-managed programming
Grant 7,978,508 - Czubatyj July 12, 2 | 2011-07-12 |
Phase Change Memory That Switches Between Crystalline Phases
App 20110157970 - Czubatyj; Wolodymyr | 2011-06-30 |
Phase change device with offset contact
Grant 7,952,087 - Czubatyj , et al. May 31, 2 | 2011-05-31 |
Composite chalcogenide materials and devices
Grant 7,935,951 - Czubatyj , et al. May 3, 2 | 2011-05-03 |
Variable Resistance Materials with Superior Data Retention Characteristics
App 20110084240 - Schell; Carl ; et al. | 2011-04-14 |
Phase change memory that switches between crystalline phases
Grant 7,923,724 - Czubatyj April 12, 2 | 2011-04-12 |
Memory device and method of making same
Grant 7,902,536 - Czubatyj , et al. March 8, 2 | 2011-03-08 |
Chalcogenide Devices Exhibiting Stable Operation from the As-Fabricated State
App 20100321991 - Kostylev; Sergey A. ; et al. | 2010-12-23 |
Breakdown Layer via Lateral Diffusion
App 20100301988 - Czubatyj; Wolodymyr ; et al. | 2010-12-02 |
Programmable resistance memory and method of making same
App 20100283029 - Dennison; Charles ; et al. | 2010-11-11 |
Chalcogenide devices exhibiting stable operation from the as-fabricated state
Grant 7,786,462 - Kostylev , et al. August 31, 2 | 2010-08-31 |
Deposition of Chalcogenide Materials via Vaporization Process
App 20100203263 - Czubatyj; Wolodymyr | 2010-08-12 |
Deposition Of Chalcogenide Materials Via Vaporization Process
App 20100203709 - Czubatyj; Wolodymyr | 2010-08-12 |
Multi-layer chalcogenide devices
Grant 7,767,992 - Sandoval , et al. August 3, 2 | 2010-08-03 |
Reduction of Drift in Phase-Change Memory via Thermally-Managed Programming
App 20100182826 - Czubatyj; Wolodymyr | 2010-07-22 |
Memory device and method of making same
Grant 7,723,715 - Czubatyj , et al. May 25, 2 | 2010-05-25 |
Memory Device
App 20100084625 - Wicker; Guy ; et al. | 2010-04-08 |
Electrically rewritable non-volatile memory element and method of manufacturing the same
Grant 7,692,272 - Asano , et al. April 6, 2 | 2010-04-06 |
Multilevel Variable Resistance Memory Cell Utilizing Crystalline Programming States
App 20100027328 - Czubatyj; Wolodymyr ; et al. | 2010-02-04 |
Forming a carbon layer between phase change layers of a phase change memory
Grant 7,649,191 - Czubatyj , et al. January 19, 2 | 2010-01-19 |
Method for manufacturing Chalcogenide devices
App 20090298222 - Lowrey; Tyler ; et al. | 2009-12-03 |
Electrically rewritable non-volatile memory element and method of manufacturing the same
Grant 7,589,364 - Asano , et al. September 15, 2 | 2009-09-15 |
Temperature and pressure control methods to fill features with programmable resistance and switching devices
App 20090227092 - Fournier; Jeff ; et al. | 2009-09-10 |
Memory Device
App 20090225588 - Czubatyj; Wolodymyr ; et al. | 2009-09-10 |
Non-volatile programmable variable resistance element
App 20090166601 - Czubatyj; Wolodymyr ; et al. | 2009-07-02 |
Chalcogenide devices and materials having reduced germanium or telluruim content
Grant 7,525,117 - Kostylev , et al. April 28, 2 | 2009-04-28 |
Memory Device With Low Reset Current
App 20090095951 - Kostylev; Sergey ; et al. | 2009-04-16 |
Memory element with improved contacts
App 20090057645 - Kostylev; Sergey A. ; et al. | 2009-03-05 |
Memory element with improved contacts
Grant 7,473,574 - Kostylev , et al. January 6, 2 | 2009-01-06 |
Programmable resistance memory element with threshold switching material
Grant 7,459,762 - Kostylev , et al. December 2, 2 | 2008-12-02 |
Method of Programming Multi-Layer Chalcogenide Devices
App 20080273372 - Sandoval; Regino ; et al. | 2008-11-06 |
Phase change device with offset contact
App 20080224120 - Czubatyj; Wolodymyr ; et al. | 2008-09-18 |
Electrically programmable memory element with improved contacts
Grant 7,407,829 - Lowrey , et al. August 5, 2 | 2008-08-05 |
Chalcogenide semiconductor memory device with insulating dielectric
App 20080064198 - Czubatyj; Wolodymyr ; et al. | 2008-03-13 |
Chalcogenide devices exhibiting stable operation from the as-fabricated state
App 20080048167 - Kostylev; Sergey A. ; et al. | 2008-02-28 |
Multi-layered chalcogenide and related devices having enhanced operational characteristics
App 20080042119 - Sandoval; Regino ; et al. | 2008-02-21 |
Composite Chalcogenide Materials and Devices
App 20080035907 - Czubatyj; Wolodymyr ; et al. | 2008-02-14 |
Methods of accelerated life testing of programmable resistance memory elements
Grant 7,327,602 - Kostylev , et al. February 5, 2 | 2008-02-05 |
Memory Device And Method Of Making Same
App 20080023685 - Czubatyj; Wolodymyr ; et al. | 2008-01-31 |
Forming a carbon layer between phase change layers of a phase change memory
App 20070297213 - Czubatyj; Wolodymyr ; et al. | 2007-12-27 |
Forming a carbon layer between phase change layers of a phase change memory
Grant 7,282,730 - Czubatyj , et al. October 16, 2 | 2007-10-16 |
Memory element with improved contacts
App 20070235709 - Kostylev; Sergey A. ; et al. | 2007-10-11 |
Reading phase change memories without triggering reset cell threshold devices
Grant 7,280,390 - Kostylev , et al. October 9, 2 | 2007-10-09 |
Electrically rewritable non-volatile memory element and method of manufacturing the same
App 20070164267 - Asano; Isamu ; et al. | 2007-07-19 |
Electrically rewritable non-volatile memory element and method of manufacturing the same
App 20070096074 - Asano; Isamu ; et al. | 2007-05-03 |
Memory device and method of making same
App 20070063181 - Czubatyj; Wolodymyr ; et al. | 2007-03-22 |
Memory device and method of making same
App 20070048945 - Czubatyj; Wolodymyr ; et al. | 2007-03-01 |
Chalcogenide devices incorporating chalcogenide materials having reduced germanium or telluruim content
App 20070034850 - Kostylev; Sergey ; et al. | 2007-02-15 |
Multi-layer chalcogenide devices
App 20070034849 - Sandoval; Regino ; et al. | 2007-02-15 |
Chalcogenide devices and materials having reduced germanium or telluruim content
App 20070034851 - Kostylev; Sergey A. ; et al. | 2007-02-15 |
Reading phase change memories without triggering reset cell threshold devices
App 20060233019 - Kostylev; Sergey A. ; et al. | 2006-10-19 |
Forming a carbon layer between phase change layers of a phase change memory
App 20060157689 - Czubatyj; Wolodymyr ; et al. | 2006-07-20 |
Phase change memory that switches between crystalline phases
App 20060151849 - Czubatyj; Wolodymyr | 2006-07-13 |
Programmable resistance memory element with threshold switching material
App 20060118911 - Kostylev; Sergey A. ; et al. | 2006-06-08 |
Electrically programmable memory element with improved contacts
App 20060110846 - Lowrey; Tyler ; et al. | 2006-05-25 |
Methods of accelerated life testing of programmable resistance memory elements
App 20060077705 - Kostylev; Sergey A. ; et al. | 2006-04-13 |
Programmable resistance memory element with threshold switching material
Grant 6,992,369 - Kostylev , et al. January 31, 2 | 2006-01-31 |
Electrically programmable memory element with improved contacts
Grant 6,969,866 - Lowrey , et al. November 29, 2 | 2005-11-29 |
Method of eliminating drift in phase-change memory
Grant 6,914,801 - Kostylev , et al. July 5, 2 | 2005-07-05 |
Programmable resistance memory element with threshold switching material
App 20050077515 - Kostylev, Sergey A. ; et al. | 2005-04-14 |
Programmable resistance memory element with layered memory material
Grant 6,872,963 - Kostylev , et al. March 29, 2 | 2005-03-29 |
Electrically programmable memory element with improved contacts
App 20040245603 - Lowrey, Tyler ; et al. | 2004-12-09 |
Method of eliminating drift in phase-change memory
App 20040228159 - Kostylev, Sergey A. ; et al. | 2004-11-18 |
Programmable resistance memory element with layered memory material
App 20040026730 - Kostylev, Sergey A. ; et al. | 2004-02-12 |
Memory element with memory material comprising phase-change material and dielectric material
Grant 6,087,674 - Ovshinsky , et al. July 11, 2 | 2000-07-11 |
Method of programming phase-change memory element
Grant 6,075,719 - Lowrey , et al. June 13, 2 | 2000-06-13 |
Composite memory material comprising a mixture of phase-change memory material and dielectric material
Grant 5,825,046 - Czubatyj , et al. October 20, 1 | 1998-10-20 |
Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
Grant 5,534,711 - Ovshinsky , et al. July 9, 1 | 1996-07-09 |
Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
Grant 5,406,509 - Ovshinsky , et al. April 11, 1 | 1995-04-11 |
Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life
Grant 5,341,328 - Ovshinsky , et al. * August 23, 1 | 1994-08-23 |
Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements
Grant 5,335,219 - Ovshinsky , et al. August 2, 1 | 1994-08-02 |
Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
Grant 5,296,716 - Ovshinsky , et al. * March 22, 1 | 1994-03-22 |
Method of forming a layer of doped crystalline semiconductor alloy material
Grant 5,180,690 - Czubatyj , et al. January 19, 1 | 1993-01-19 |
Electrically erasable phase change memory
Grant 5,166,758 - Ovshinsky , et al. November 24, 1 | 1992-11-24 |
Semiconductor with ordered clusters
Grant 5,103,284 - Ovshinsky , et al. April 7, 1 | 1992-04-07 |
Method of making a double injection field effect transistor
Grant 4,882,295 - Czubatyj , et al. November 21, 1 | 1989-11-21 |
Electronic arrays having thin film line drivers
Grant 4,782,340 - Czubatyj , et al. November 1, 1 | 1988-11-01 |
Photovoltaic device having incident radiation directing means for total internal reflection
Grant 4,419,533 - Czubatyj , et al. December 6, 1 | 1983-12-06 |
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