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Smart portable detection apparatus and method App 20060170541 - Tompa; Gary S. ;   et al. | 2006-08-03 |
Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7 Grant 6,867,452 - Hayashi , et al. March 15, 2 | 2005-03-15 |
Radiation hardened microelectronic device App 20050040546 - Cuchiaro, Joseph D. ;   et al. | 2005-02-24 |
Microelectronic radiation detector App 20040227094 - Tompa, Gary S. ;   et al. | 2004-11-18 |
Compositionally engineered CexMnyO3 and semiconductor devices based thereon App 20040051126 - Cuchiaro, Joseph D. ;   et al. | 2004-03-18 |
Metal organic precursors for transparent metal oxide thin films and method of making same Grant 6,686,489 - Celinska , et al. February 3, 2 | 2004-02-03 |
Ferroelectric and high dielectric constant transistors Grant 6,559,469 - Paz de Araujo , et al. May 6, 2 | 2003-05-06 |
Method for forming an integrated circuit Grant 6,541,279 - Hayashi , et al. April 1, 2 | 2003-04-01 |
Interlayer oxide containing thin films for high dielectric constant application App 20030052357 - Hayashi, Shinichiro ;   et al. | 2003-03-20 |
Interlayer oxide containing thin films for high dielectric constant application Grant 6,495,878 - Hayashi , et al. December 17, 2 | 2002-12-17 |
Ferroelectric integrated circuit having hydrogen barrier layer App 20020125573 - Cuchiaro, Joseph D. ;   et al. | 2002-09-12 |
Integrated circuit capacitors with barrier layer and process for making the same Grant 6,447,838 - Azuma , et al. September 10, 2 | 2002-09-10 |
Metal organic precursors for transparent metal oxide thin films and method of making same App 20020087018 - Celinska, Jolanta ;   et al. | 2002-07-04 |
Metal organic precursors for transparent metal oxide thin films and method of making same Grant 6,376,691 - Celinska , et al. April 23, 2 | 2002-04-23 |
Low imprint ferroelectric material for long retention memory and method of making the same App 20010031505 - Arita, Koji ;   et al. | 2001-10-18 |
Low imprint ferroelectric material for long retention memory and method of making the same Grant 6,281,534 - Arita , et al. August 28, 2 | 2001-08-28 |
Iridium oxide diffusion barrier between local interconnect layer and thin film of layered superlattice material App 20010013614 - Joshi, Vikram ;   et al. | 2001-08-16 |
Metal oxide thin films for high dielectric constant application App 20010012698 - Hayashi, Shinichiro ;   et al. | 2001-08-09 |
Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricting same App 20010010377 - Cuchiaro, Joseph D. ;   et al. | 2001-08-02 |
Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating same Grant 6,225,656 - Cuchiaro , et al. May 1, 2 | 2001-05-01 |
Method of fabricating ferroelectric integrated circuit using dry and wet etching Grant 6,207,465 - Cuchiaro , et al. March 27, 2 | 2001-03-27 |
Ferroelectric flat panel displays Grant 6,198,225 - Kano , et al. March 6, 2 | 2001-03-06 |
Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation Grant 6,165,802 - Cuchiaro , et al. December 26, 2 | 2000-12-26 |
Method for fabricating ferroelectric integrated circuits Grant 6,130,103 - Cuchiaro , et al. October 10, 2 | 2000-10-10 |
Method of making layered superlattice materials for ferroelectric, high dielectric constant, integrated circuit applications Grant 6,080,592 - Paz de Araujo , et al. June 27, 2 | 2000-06-27 |
Liquid deposition methods of fabricating layered superlattice materials Grant 6,056,994 - Paz de Araujo , et al. May 2, 2 | 2000-05-02 |
Ferroelectric/high dielectric constant integrated circuit and method of fabricating same Grant 6,051,858 - Uchida , et al. April 18, 2 | 2000-04-18 |
Method of fabricating an integrated circuit using self-patterned thin films Grant 6,022,669 - Uchida , et al. February 8, 2 | 2000-02-08 |
Low imprint ferroelectric material for long retention memory and method of making the same Grant 5,883,828 - Cuchiaro , et al. March 16, 1 | 1999-03-16 |
Process for fabricating layered superlattice materials and making electronic devices including same Grant 5,825,057 - Watanabe , et al. October 20, 1 | 1998-10-20 |
Low imprint ferroelectric material for long retention memory and method of making the same Grant 5,784,310 - Cuchiaro , et al. July 21, 1 | 1998-07-21 |
Bottom electrode structure for dielectric capacitors Grant 5,708,302 - Azuma , et al. January 13, 1 | 1998-01-13 |
Integrated circuit capacitors and process for making the same Grant 5,614,018 - Azuma , et al. March 25, 1 | 1997-03-25 |
Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current Grant 5,519,234 - Paz de Araujo , et al. May 21, 1 | 1996-05-21 |
Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications Grant 5,468,679 - Paz de Araujo , et al. November 21, 1 | 1995-11-21 |
Antifuse programmable element using ferroelectric material Grant 5,463,244 - De Araujo , et al. October 31, 1 | 1995-10-31 |
Process for fabricating layered superlattice materials and making electronic devices including same Grant 5,439,845 - Watanabe , et al. August 8, 1 | 1995-08-08 |
Process for fabricating layered superlattice materials and making electronic devices including same Grant 5,434,102 - Watanabe , et al. July 18, 1 | 1995-07-18 |
Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications Grant 5,423,285 - Paz de Araujo , et al. June 13, 1 | 1995-06-13 |