Patent | Date |
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Silicon carbide horizontal channel buffered gate semiconductor devices Grant 6,281,521 - Singh August 28, 2 | 2001-08-28 |
Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices Grant 6,218,254 - Singh , et al. April 17, 2 | 2001-04-17 |
Latch-up free power MOS-bipolar transistor Grant 6,121,633 - Singh , et al. September 19, 2 | 2000-09-19 |
Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion Grant 6,107,142 - Suvorov , et al. August 22, 2 | 2000-08-22 |
Colorless silicon carbide crystals Grant 6,025,289 - Carter , et al. February 15, 2 | 2000-02-15 |
Process for reducing defects in oxide layers on silicon carbide Grant 5,972,801 - Lipkin , et al. October 26, 1 | 1999-10-26 |
Latch-up free power UMOS-bipolar transistor Grant 5,969,378 - Singh October 19, 1 | 1999-10-19 |
Recovery of surface-ready silicon carbide substrates Grant 5,923,946 - Negley July 13, 1 | 1999-07-13 |
High efficiency light emitting diodes Grant 5,912,477 - Negley June 15, 1 | 1999-06-15 |
Low-strain laser structures with group III nitride active layers Grant 5,838,706 - Edmond , et al. November 17, 1 | 1998-11-17 |
Silicon carbide metal-insulator semiconductor field effect transistor Grant 5,831,288 - Singh , et al. November 3, 1 | 1998-11-03 |
Led dot matrix drive method and apparatus Grant 5,812,105 - Van de Ven September 22, 1 | 1998-09-22 |
Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures Grant 5,776,837 - Palmour July 7, 1 | 1998-07-07 |
Double heterojunction light emitting diode with gallium nitride active layer Grant 5,739,554 - Edmond , et al. April 14, 1 | 1998-04-14 |
High resolution, high brightness light emitting diode display and method and producing the same Grant 5,724,062 - Hunter March 3, 1 | 1998-03-03 |
Silicon carbide metal-insulator semiconductor field effect transistor Grant 5,719,409 - Singh , et al. February 17, 1 | 1998-02-17 |
Growth of colorless silicon carbide crystals Grant 5,718,760 - Carter , et al. February 17, 1 | 1998-02-17 |
Self-aligned field-effect transistor for high frequency applications Grant 5,686,737 - Allen November 11, 1 | 1997-11-11 |
Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures Grant 5,679,153 - Dmitriev , et al. October 21, 1 | 1997-10-21 |
Method for producing high efficiency light-emitting diodes and resulting diode structures Grant 5,631,190 - Negley May 20, 1 | 1997-05-20 |
Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures Grant 5,629,531 - Palmour May 13, 1 | 1997-05-13 |
Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures Grant 5,612,260 - Palmour March 18, 1 | 1997-03-18 |
Method of forming green light emitting diode in silicon carbide Grant 5,604,135 - Edmond , et al. February 18, 1 | 1997-02-18 |
Low-strain laser structures with group III nitride active layers Grant 5,592,501 - Edmond , et al. January 7, 1 | 1997-01-07 |
Silicon carbide thyristor Grant 5,539,217 - Edmond , et al. July 23, 1 | 1996-07-23 |
Vertical geometry light emitting diode with group III nitride active layer and extended lifetime Grant 5,523,589 - Edmond , et al. June 4, 1 | 1996-06-04 |
Power MOSFET in silicon carbide Grant 5,506,421 - Palmour April 9, 1 | 1996-04-09 |
Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate Grant 5,465,249 - Cooper, Jr. , et al. November 7, 1 | 1995-11-07 |
Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures Grant 5,459,107 - Palmour October 17, 1 | 1995-10-17 |
Blue light-emitting diode with high external quantum efficiency Grant 5,416,342 - Edmond , et al. May 16, 1 | 1995-05-16 |
Method of forming platinum ohmic contact to p-type silicon carbide Grant 5,409,859 - Glass , et al. April 25, 1 | 1995-04-25 |
Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices Grant 5,393,993 - Edmond , et al. February 28, 1 | 1995-02-28 |
System and method for accelerated degradation testing of semiconductor devices Grant 5,381,103 - Edmond , et al. January 10, 1 | 1995-01-10 |
Shuttered and cycled light emitting diode display and method of producing the same Grant 5,359,345 - Hunter October 25, 1 | 1994-10-25 |
Blue light-emitting diode with degenerate junction structure Grant 5,338,944 - Edmond , et al. August 16, 1 | 1994-08-16 |
High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide Grant 5,270,554 - Palmour December 14, 1 | 1993-12-14 |
Junction field-effect transistor formed in silicon carbide Grant 5,264,713 - Palmour November 23, 1 | 1993-11-23 |
High efficiency light emitting diodes from bipolar gallium nitride Grant 5,210,051 - Carter, Jr. May 11, 1 | 1993-05-11 |
Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product Grant 5,200,022 - Kong , et al. April 6, 1 | 1993-04-06 |
Method for silicon carbide chemical vapor deposition using levitated wafer system Grant 5,155,062 - Coleman * October 13, 1 | 1992-10-13 |
Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product Grant 5,119,540 - Kong , et al. June 9, 1 | 1992-06-09 |
Blue light emitting diode formed in silicon carbide Grant 5,027,168 - Edmond * June 25, 1 | 1991-06-25 |
Packaged diode for high temperature operation Grant 5,008,735 - Edmond , et al. April 16, 1 | 1991-04-16 |
Method of production of light emitting diodes Grant 4,966,862 - Edmond October 30, 1 | 1990-10-30 |
Method of preparing silicon carbide surfaces for crystal growth Grant 4,946,547 - Palmour , et al. August 7, 1 | 1990-08-07 |
Blue light emitting diode formed in silicon carbide Grant 4,918,497 - Edmond April 17, 1 | 1990-04-17 |