Corrion; Andrea

Patent Applications and Registrations

Patent applications and USPTO patent grants for Corrion; Andrea.The latest application filed is for "self-passivated nitrogen-polar iii-nitride transistor".

Company Profile

4.30.8

Corrion; Andrea - Malibu CA
Corrion; Andrea - Oak Park CA
Corrion; Andrea - Santa Monica CA
Corrion; Andrea - Thousand Oaks CA
Corrion; Andrea - Thounsand Oaks CA US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Self-passivated Nitrogen-polar Iii-nitride Transistor App 20220069114 - DENNINGHOFF; Daniel ; et al.	2022-03-03
Highly scaled linear GaN HEMT Structures Grant 10,714,605 - Moon , et al.	2020-07-14
Monolithic integration of group III nitride epitaxial layers Grant 10,418,473 - Brown , et al. Sept	2019-09-17
Highly Scaled Linear GaN HEMT Structures App 20190252535 - MOON; Jeong-Sun ; et al.	2019-08-15
Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas Grant 10,325,997 - Khalil , et al.	2019-06-18
Fabrication of microfluidic channels in diamond Grant 10,217,648 - Brown , et al. Feb	2019-02-26
Monolithic integration of group III nitride epitaxial layers Grant 9,954,090 - Brown , et al. April 24, 2	2018-04-24
Stepped field plate wide bandgap field-effect transistor and method Grant 9,929,243 - Corrion , et al. March 27, 2	2018-03-27
Vertical Iii-nitride Semiconductor Device With A Vertically Formed Two Dimensional Electron Gas App 20170025518 - KHALIL; Sameh G. ; et al.	2017-01-26
Near junction cooling for GaN devices Grant 9,496,197 - Micovic , et al. November 15, 2	2016-11-15
Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas Grant 9,490,357 - Khalil , et al. November 8, 2	2016-11-08
Etch-based fabrication process for stepped field-plate wide-bandgap Grant 9,419,122 - Corrion , et al. August 16, 2	2016-08-16
Monolithic integration of group III nitride epitaxial layers Grant 9,378,949 - Brown , et al. June 28, 2	2016-06-28
Apparatus and method for reducing the interface resistance in GaN Heterojunction FETs Grant 9,252,247 - Micovic , et al. February 2, 2	2016-02-02
Etch-based fabrication process for stepped field-plate wide-bandgap Grant 9,202,880 - Corrion , et al. December 1, 2	2015-12-01
Stepped field plate wide bandgap field-effect transistor and method Grant 9,142,626 - Corrion , et al. September 22, 2	2015-09-22
Method of fabricating slanted field-plate GaN heterojunction field-effect transistor Grant 8,980,759 - Corrion , et al. March 17, 2	2015-03-17
Vertical Iii-nitride Semiconductor Device With A Vertically Formed Two Dimensional Electron Gas App 20150014700 - Khalil; Sameh G. ; et al.	2015-01-15
Monolithic integration of group III nitride epitaxial layers Grant 8,796,736 - Brown , et al. August 5, 2	2014-08-05
Self-aligned sidewall gate GaN HEMT Grant 8,766,321 - Shinohara , et al. July 1, 2	2014-07-01
Enhancement and depletion mode GaN HMETs on the same substrate Grant 8,748,244 - Corrion , et al. June 10, 2	2014-06-10
Gate metallization methods for self-aligned sidewall gate GaN HEMT Grant 8,698,201 - Regan , et al. April 15, 2	2014-04-15
Apparatus and method for reducing the interface resistance in GaN heterojunction FETs Grant 8,686,473 - Micovic , et al. April 1, 2	2014-04-01
AlGaN/GaN hybrid MOS-HFET Grant 8,653,559 - Corrion , et al. February 18, 2	2014-02-18
Normally-off Gallium Nitride Transistor With Insulating Gate And Method Of Making The Same App 20130328061 - Chu; Rongming ; et al.	2013-12-12
Gate metallization methods for self-aligned sidewall gate GaN HEMT Grant 8,558,281 - Regan , et al. October 15, 2	2013-10-15
Monolithic integration of group III nitride enhancement layers Grant 8,470,652 - Brown , et al. June 25, 2	2013-06-25
SELF-ALIGNED SIDEWALL GATE GaN HEMT App 20130119400 - Shinohara; Keisuke ; et al.	2013-05-16
Self aligned sidewall gate GaN HEMT Grant 8,383,471 - Shinihara , et al. February 26, 2	2013-02-26
ALGaN/GaN HYBRID MOS-HFET App 20130001646 - Corrion; Andrea ; et al.	2013-01-03

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