| Patent | Date |
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Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices
Grant 11,404,217 - Chavan , et al. August 2, 2 | 2022-08-02 |
Methods of Forming Structures Containing Leaker-Devices and Memory Configurations Incorporating Leaker-Devices
App 20220199634 - Calderoni; Alessandro ; et al. | 2022-06-23 |
Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devices
Grant 11,315,939 - Calderoni , et al. April 26, 2 | 2022-04-26 |
Memory Cells And Methods Of Forming A Capacitor Including Current Leakage Paths Having Different Total Resistances
App 20220028442 - Mutch; Michael ; et al. | 2022-01-27 |
Memory cells and methods of forming a capacitor including current leakage paths having different total resistances
Grant 11,170,834 - Mutch , et al. November 9, 2 | 2021-11-09 |
Semiconductor Devices Including Ferroelectric Materials
App 20210313339 - Tao; Qian ; et al. | 2021-10-07 |
Semiconductor devices including ferroelectric materials
Grant 11,043,502 - Tao , et al. June 22, 2 | 2021-06-22 |
Methods of Incorporating Leaker-Devices into Capacitor Configurations to Reduce Cell Disturb, and Capacitor Configurations Incorporating Leaker-Devices
App 20210134816 - Calderoni; Alessandro ; et al. | 2021-05-06 |
Memory Cells Comprising Ferroelectric Material And Including Current Leakage Paths Having Different Total Resistances
App 20210104597 - Balakrishnan; Muralikrishnan ; et al. | 2021-04-08 |
Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devices
Grant 10,903,218 - Calderoni , et al. January 26, 2 | 2021-01-26 |
Memory Cells And Methods Of Forming A Capacitor Including Current Leakage Paths Having Different Total Resistances
App 20210012824 - Mutch; Michael ; et al. | 2021-01-14 |
Memory cells comprising ferroelectric material and including current leakage paths having different total resistances
Grant 10,879,344 - Balakrishnan , et al. December 29, 2 | 2020-12-29 |
Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devices
Grant 10,833,092 - Calderoni , et al. November 10, 2 | 2020-11-10 |
Methods of Incorporating Leaker-Devices into Capacitor Configurations to Reduce Cell Disturb, and Capacitor Configurations Incorporating Leaker-Devices
App 20200328221 - Calderoni; Alessandro ; et al. | 2020-10-15 |
Memory Cells Comprising Ferroelectric Material And Including Current Leakage Paths Having Different Total Resistances
App 20200279907 - Balakrishnan; Muralikrishnan ; et al. | 2020-09-03 |
Methods of Incorporating Leaker Devices into Capacitor Configurations to Reduce Cell Disturb, and Capacitor Configurations Incor
App 20200243267 - Chavan; Ashonita A. ; et al. | 2020-07-30 |
Methods Of Incorporating Leaker-devices Into Capacitor Configurations To Reduce Cell Disturb, And Capacitor Configurations Incor
App 20200235111 - Calderoni; Alessandro ; et al. | 2020-07-23 |
Ferroelectric Devices and Methods of Forming Ferroelectric Devices
App 20200227423 - Chavan; Ashonita A. ; et al. | 2020-07-16 |
Methods of forming a capacitor comprising ferroelectric material and including current leakage paths having different total resistances
Grant 10,680,057 - Balakrishnan , et al. | 2020-06-09 |
Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb
Grant 10,650,978 - Chavan , et al. | 2020-05-12 |
Semiconductor Devices Including Ferroelectric Materials
App 20190386015 - Tao; Qian ; et al. | 2019-12-19 |
Methods Of Forming A Capacitor Comprising Ferroelectric Material And Including Current Leakage Paths Having Different Total Resi
App 20190355803 - Balakrishnan; Muralikrishnan ; et al. | 2019-11-21 |
Semiconductor devices including ferroelectric materials
Grant 10,403,630 - Tao , et al. Sep | 2019-09-03 |
Memory cells comprising ferroelectric material and including current leakage paths having different total resistances
Grant 10,396,145 - Balakrishnan , et al. A | 2019-08-27 |
Methods of Incorporating Leaker Devices into Capacitor Configurations to Reduce Cell Disturb
App 20190189357 - Chavan; Ashonita A. ; et al. | 2019-06-20 |
Semiconductor Devices Including Ferroelectric Materials
App 20180350824 - Tao; Qian ; et al. | 2018-12-06 |
Resistive memory devices
Grant 10,090,462 - Ramaswamy , et al. October 2, 2 | 2018-10-02 |
Methods of forming a ferroelectric memory cell
Grant 10,062,703 - Tao , et al. August 28, 2 | 2018-08-28 |
Memory Cells and Methods of Forming a Capacitor
App 20180197870 - Balakrishnan; Muralikrishnan ; et al. | 2018-07-12 |
Ferroelectric Devices and Methods of Forming Ferroelectric Devices
App 20170345831 - Chavan; Ashonita A. ; et al. | 2017-11-30 |
Semiconductor device structures including ferroelectric memory cells
Grant 9,698,343 - Tao , et al. July 4, 2 | 2017-07-04 |
Methods Of Forming A Ferroelectric Memory Cell
App 20170186757 - Tao; Qian ; et al. | 2017-06-29 |
Memory cells
Grant 9,431,606 - Ramaswamy , et al. August 30, 2 | 2016-08-30 |
Filamentary memory devices and methods
Grant 9,324,943 - Bi , et al. April 26, 2 | 2016-04-26 |
Resistive Memory Devices
App 20160086664 - Ramaswamy; Durai Vishak Nirmal ; et al. | 2016-03-24 |
Semiconductor Device Structures Including Ferroelectric Memory Cells
App 20160064655 - Tao; Qian ; et al. | 2016-03-03 |
Methods of forming a ferroelectric memory cell
Grant 9,231,206 - Tao , et al. January 5, 2 | 2016-01-05 |
Resistive memory devices
Grant 9,224,945 - Ramaswamy , et al. December 29, 2 | 2015-12-29 |
Methods Of Forming A Ferroelectric Memory Cell And Related Semiconductor Device Structures
App 20150076437 - Tao; Qian ; et al. | 2015-03-19 |
Filamentary Memory Devices And Methods
App 20140339491 - Bi; Lei ; et al. | 2014-11-20 |
Methods of forming a programmable region that comprises a multivalent metal oxide portion and an oxygen containing dielectric portion
Grant 8,809,157 - Ramaswamy , et al. August 19, 2 | 2014-08-19 |
Filamentary memory devices and methods
Grant 8,797,784 - Bi , et al. August 5, 2 | 2014-08-05 |
Methods Of Forming A Programmable Region That Comprises A Multivalent Metal Oxide Portion And An Oxygen Containing Dielectric Portion
App 20140106534 - Ramaswamy; D.V. Nirmal ; et al. | 2014-04-17 |
Resistive Memory Devices
App 20140061568 - Ramaswamy; Durai Vishak Nirmal ; et al. | 2014-03-06 |
Methods of forming a memory cell having programmable material that comprises a multivalent metal oxide portion and an oxygen containing dielectric portion
Grant 8,633,084 - Ramaswamy , et al. January 21, 2 | 2014-01-21 |
Filamentary Memory Devices And Methods
App 20130329483 - Bi; Lei ; et al. | 2013-12-12 |
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