loadpatents
name:-0.053449153900146
name:-0.057338953018188
name:-0.026774168014526
Conti; Richard A. Patent Filings

Conti; Richard A.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Conti; Richard A..The latest application filed is for "nanosheet transistor having a strained channel with strain-preserving multi-segmented source/drain regions".

Company Profile
26.56.48
  • Conti; Richard A. - Altamont NY
  • Conti; Richard A. - Katonach NY
  • Conti; Richard A. - North Attleboro MA
  • Conti; Richard A. - Katonah NY
  • Conti; Richard A - Katonah NY US
  • Conti; Richard A. - Katohah NY
  • Conti; Richard A. - Mt. Kisco NY
  • Conti; Richard A. - Mount Kisco NY
  • Conti; Richard A. - Mount Cisco NY
  • Conti; Richard A. - Westchester County NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Forming shallow trench isolation regions for nanosheet field-effect transistor devices using sacrificial epitaxial layer
Grant 11,322,408 - Loubet , et al. May 3, 2
2022-05-03
Dual width finned semiconductor structure
Grant 11,189,532 - Song , et al. November 30, 2
2021-11-30
Nanosheet transistor having a strained channel with strain-preserving multi-segmented source/drain regions
Grant 11,164,958 - Mochizuki , et al. November 2, 2
2021-11-02
Middle-of-line interconnect having low metal-to-metal interface resistance
Grant 11,114,382 - Varghese , et al. September 7, 2
2021-09-07
Nanosheet Transistor Having A Strained Channel With Strain-preserving Multi-segmented Source/drain Regions
App 20210234020 - Mochizuki; Shogo ;   et al.
2021-07-29
Self-aligned gate contact integration with metal resistor
Grant 11,056,537 - Miao , et al. July 6, 2
2021-07-06
Nano Multilayer Carbon-rich Low-k Spacer
App 20210151579 - Canaperi; Donald ;   et al.
2021-05-20
Forming Shallow Trench Isolation Regions For Nanosheet Field-effect Transistor Devices Using Sacrificial Epitaxial Layer
App 20210111077 - Loubet; Nicolas ;   et al.
2021-04-15
Nano multilayer carbon-rich low-k spacer
Grant 10,937,892 - Canaperi , et al. March 2, 2
2021-03-02
Forming shallow trench isolation regions for nanosheet field-effect transistor devices using sacrificial epitaxial layer
Grant 10,910,273 - Loubet , et al. February 2, 2
2021-02-02
Stress modulation of nFET and pFET fin structures
Grant 10,832,973 - Zhou , et al. November 10, 2
2020-11-10
Collision Mitigation Apparatus Material Testing Systems Having Collision Mitigation Apparatus
App 20200309651 - Conti; Richard A. ;   et al.
2020-10-01
Self-aligned Gate Contact Integration With Metal Resistor
App 20200312909 - Miao; Xin ;   et al.
2020-10-01
Forming Shallow Trench Isolation Regions For Nanosheet Field-effect Transistor Devices Using Sacrificial Epitaxial Layer
App 20200273753 - Loubet; Nicolas ;   et al.
2020-08-27
Stress Modulation Of Nfet And Pfet Fin Structures
App 20200266111 - Zhou; Huimei ;   et al.
2020-08-20
Highly selective dry etch process for vertical FET STI recess
Grant 10,734,245 - Bi , et al.
2020-08-04
Dual Width Finned Semiconductor Structure
App 20200194314 - Song; Yi ;   et al.
2020-06-18
Dual width finned semiconductor structure
Grant 10,672,668 - Song , et al.
2020-06-02
Stress modulation of nFET and pFET fin structures
Grant 10,665,512 - Zhou , et al.
2020-05-26
Highly Selective Dry Etch Process for Vertical FET STI Recess
App 20200126805 - Bi; Zhenxing ;   et al.
2020-04-23
Stress Modulation Of Nfet And Pfet Fin Structures
App 20200126867 - Zhou; Huimei ;   et al.
2020-04-23
Middle-of-line Interconnect Having Low Metal-to-metal Interface Resistance
App 20200126926 - Varghese; Alex Joseph ;   et al.
2020-04-23
Nano Multilayer Carbon-rich Low-k Spacer
App 20200083345 - Canaperi; Donald ;   et al.
2020-03-12
Multi-level air gap formation in dual-damascene structure
Grant 10,586,733 - Conti , et al.
2020-03-10
Protection of low temperature isolation fill
Grant 10,586,700 - Belyansky , et al.
2020-03-10
Preventing Delamination At Silicon/dielectic Interface
App 20200051812 - Belyansky; Michael P. ;   et al.
2020-02-13
Protection of low temperature isolation fill
Grant 10,535,550 - Belyansky , et al. Ja
2020-01-14
Dual Width Finned Semiconductor Structure
App 20190371678 - Song; Yi ;   et al.
2019-12-05
Multi-level Air Gap Formation In Dual-damascene Structure
App 20190157140 - Conti; Richard A. ;   et al.
2019-05-23
Multi-level air gap formation in dual-damascene structure
Grant 10,224,239 - Conti , et al.
2019-03-05
Protection Of Low Temperature Isolation Fill
App 20190067079 - Belyansky; Michael P. ;   et al.
2019-02-28
Protection Of Low Temperature Isolation Fill
App 20190067078 - Belyansky; Michael P. ;   et al.
2019-02-28
Multi-level air gap formation in dual-damascene structure
Grant 10,204,827 - Conti , et al. Feb
2019-02-12
Multi-level Air Gap Formation In Dual-damascene Structure
App 20180019200 - Conti; Richard A. ;   et al.
2018-01-18
Multi-level Air Gap Formation In Dual-damascene Structure
App 20180019202 - Conti; Richard A. ;   et al.
2018-01-18
Multi-level Air Gap Formation In Dual-damascene Structure
App 20180019203 - Conti; Richard A. ;   et al.
2018-01-18
Multi-level air gap formation in dual-damascene structure
Grant 9,859,212 - Conti , et al. January 2, 2
2018-01-02
Multilayer sidewall spacer for seam protection of a patterned structure
Grant 8,673,725 - O'Meara , et al. March 18, 2
2014-03-18
Dual sidewall spacer for seam protection of a patterned structure
Grant 8,664,102 - O'Meara , et al. March 4, 2
2014-03-04
Structure And Method For Reduction Of Vt-w Effect In High-k Metal Gate Devices
App 20130140670 - Aquilino; Michael V. ;   et al.
2013-06-06
Structure And Method For Reduction Of Vt-w Effect In High-k Metal Gate Devices
App 20120187522 - Aquilino; Michael V. ;   et al.
2012-07-26
Dual Sidewall Spacer For Seam Protection Of A Patterned Structure
App 20110241085 - O'Meara; David L. ;   et al.
2011-10-06
Multilayer Sidewall Spacer For Seam Protection Of A Patterned Structure
App 20110241128 - O'Meara; David L. ;   et al.
2011-10-06
Mask forming and implanting methods using implant stopping layer
Grant 7,998,871 - Babich , et al. August 16, 2
2011-08-16
Process of making a semiconductor device using multiple antireflective materials
Grant 7,968,270 - Angelopoulos , et al. June 28, 2
2011-06-28
Structure and method to control oxidation in high-k gate structures
Grant 7,955,926 - Natzle , et al. June 7, 2
2011-06-07
Method of forming nitride films with high compressive stress for improved PFET device performance
Grant 7,804,136 - Conti , et al. September 28, 2
2010-09-28
Mask forming and implanting methods using implant stopping layer and mask so formed
Grant 7,651,947 - Babich , et al. January 26, 2
2010-01-26
Method Of Fabricating A Gate Structure
App 20090311855 - Bruff; Richard A. ;   et al.
2009-12-17
Structure And Method To Control Oxidation In High-k Gate Structures
App 20090243031 - Natzle; Wesley C. ;   et al.
2009-10-01
Method Of Fabricating A Gate Structure And The Structure Thereof
App 20090101980 - Bruff; Richard A. ;   et al.
2009-04-23
Method of forming nitride films with high compressive stress for improved PFET device performance
Grant 7,491,660 - Conti , et al. February 17, 2
2009-02-17
Process of making a semiconductor device using multiple antireflective materials
Grant 7,485,573 - Angelopoulos , et al. February 3, 2
2009-02-03
Mask Forming And Implanting Methods Using Implant Stopping Layer
App 20090004869 - Babich; Katherina ;   et al.
2009-01-01
Process Of Making A Semiconductor Device Using Multiple Antireflective Materials
App 20080311508 - Angelopoulos; Marie ;   et al.
2008-12-18
Method of forming nitride films with high compressive stress for improved PFET device performance
Grant 7,462,527 - Conti , et al. December 9, 2
2008-12-09
Mask Having Implant Stopping Layer
App 20080286545 - Babich; Katherina ;   et al.
2008-11-20
HDP-based ILD capping layer
Grant 7,372,158 - Wang , et al. May 13, 2
2008-05-13
Method Of Forming Nitride Films With High Compressive Stress For Improved Pfet Device Performance
App 20080045039 - Conti; Richard A. ;   et al.
2008-02-21
Method Of Forming Nitride Films With High Compressive Stress For Improved Pfet Device Performance
App 20080036007 - Conti; Richard A. ;   et al.
2008-02-14
Method for forming damascene structure utilizing planarizing material coupled with compressive diffusion barrier material
Grant 7,326,651 - Baks , et al. February 5, 2
2008-02-05
Mask Forming And Implanting Methods Using Implant Stopping Layer And Mask So Formed
App 20070275563 - Babich; Katherina ;   et al.
2007-11-29
Process of making a semiconductor device using multiple antireflective materials
App 20070196748 - Angelopoulos; Marie ;   et al.
2007-08-23
Method For Protecting A Semiconductor Device From Carbon Depletion Based Damage
App 20070048981 - Bonilla; Griselda ;   et al.
2007-03-01
Bilayer cap structure including HDP/bHDP films for conductive metallization and method of making same
Grant 7,179,760 - Conti , et al. February 20, 2
2007-02-20
Method Of Forming Nitride Films With High Compressive Stress For Improved Pfet Device Performance
App 20070007548 - Conti; Richard A. ;   et al.
2007-01-11
BILAYER CAP STRUCTURE INCLUDING HDP/bHDP FILMS FOR CONDUCTIVE METALLIZATION AND METHOD OF MAKING SAME
App 20060270245 - Conti; Richard A. ;   et al.
2006-11-30
HDP-based ILD capping layer
Grant 7,138,717 - Wang , et al. November 21, 2
2006-11-21
Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
Grant 7,084,079 - Conti , et al. August 1, 2
2006-08-01
Improved Hdp-based Ild Capping Layer
App 20060113672 - Wang; Yun-Yu ;   et al.
2006-06-01
Self-aligned buried strap process using doped HDP oxide
Grant 6,946,345 - Beintner , et al. September 20, 2
2005-09-20
Stabilization of fluorine-containing dielectric materials in a metal insulator wiring structure
Grant 6,911,378 - Conti , et al. June 28, 2
2005-06-28
Method For Forming Damascene Structure Utilizing Planarizing Material Coupled With Compressive Diffusion Barrier Material
App 20050079701 - Baks, Heidi ;   et al.
2005-04-14
Stabilization Of Fluorine-containing Dielectric Materials In A Metal Insulator Wiring Structure
App 20040266140 - Conti, Richard A. ;   et al.
2004-12-30
Self-aligned buried strap process using doped HDP oxide
App 20040188740 - Beintner, Jochen ;   et al.
2004-09-30
Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates
Grant 6,740,539 - Conti , et al. May 25, 2
2004-05-25
Self-aligned buried strap process using doped HDP oxide
Grant 6,667,504 - Beintner , et al. December 23, 2
2003-12-23
Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates
App 20030153198 - Conti, Richard A. ;   et al.
2003-08-14
Modified gate processing for optimized definition of array and logic devices on same chip
Grant 6,548,357 - Weybright , et al. April 15, 2
2003-04-15
Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
App 20030068853 - Conti, Richard A. ;   et al.
2003-04-10
Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
Grant 6,531,412 - Conti , et al. March 11, 2
2003-03-11
Method For Low Temperature Chemical Vapor Deposition Of Low-k Films Using Selected Cyclosiloxane And Ozone Gases For Semiconductor Applications
App 20030032306 - Conti, Richard A. ;   et al.
2003-02-13
Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates
App 20030017642 - Conti, Richard A. ;   et al.
2003-01-23
Methods and materials for depositing films on semiconductor substrates
Grant 6,500,772 - Chakravarti , et al. December 31, 2
2002-12-31
Low temperature carbon rich oxy-nitride for improved RIE selectivity
Grant 6,486,015 - Chaudhary , et al. November 26, 2
2002-11-26
Bis (tertiarybutylamino) silane and ozone based doped and undoped oxides
App 20020127883 - Conti, Richard A. ;   et al.
2002-09-12
Modified gate processing for optimized difinition of array and logic devices on same chip
App 20020111025 - Weybright, Mary E. ;   et al.
2002-08-15
Methods and materials for depositing films on semiconductor substrates
App 20020090835 - Chakravarti, Ashima B. ;   et al.
2002-07-11
Modified gate processing for optimized definition of array and logic devices on same chip
Grant 6,403,423 - Weybright , et al. June 11, 2
2002-06-11
Directional CVD process with optimized etchback
Grant 6,335,261 - Natzle , et al. January 1, 2
2002-01-01
Manufacturing of cavity fuses on gate conductor level
Grant 6,274,440 - Arndt , et al. August 14, 2
2001-08-14
Method of eliminating a critical mask using a blockout mask and a resulting semiconductor structure
Grant 6,232,222 - Armacost , et al. May 15, 2
2001-05-15
Borophosphosilicate glass incorporated with fluorine for low thermal budget gap fill
Grant 6,159,870 - Chakravarti , et al. December 12, 2
2000-12-12
Methods and apparatus for filling high aspect ratio structures with silicate glass
Grant 6,077,786 - Chakravarti , et al. June 20, 2
2000-06-20
High throughput chemical vapor deposition process capable of filling high aspect ratio structures
Grant 6,030,881 - Papasouliotis , et al. February 29, 2
2000-02-29
Apparatus for chemical vapor deposition of aluminum oxide
Grant 5,614,247 - Barbee , et al. March 25, 1
1997-03-25
Fluid delivery apparatus and method having an infrared feedline sensor
Grant 5,492,718 - O'Neill , et al. February 20, 1
1996-02-20
Aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control
Grant 5,431,734 - Chapple-Sokol , et al. July 11, 1
1995-07-11
Removable gas injectors for use in chemical vapor deposition of aluminium oxide
Grant 5,425,810 - Conti , et al. June 20, 1
1995-06-20
Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics
Grant 5,383,088 - Chapple-Sokol , et al. January 17, 1
1995-01-17
Safe method for etching silicon dioxide
Grant 5,268,069 - Chapple-Sokol , et al. December 7, 1
1993-12-07
LPCVD reactor for high efficiency, high uniformity deposition
Grant 5,134,963 - Barbee , et al. August 4, 1
1992-08-04

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