Conraux; Yann

Patent Applications and Registrations

Patent applications and USPTO patent grants for Conraux; Yann.The latest application filed is for "mlu-based magnetic device having an authentication and physical unclonable function and authentication method using said mlu device".

Company Profile

3.6.7

Conraux; Yann - Saint Laurent Du Pont FR
Conraux; Yann - Sassenage FR
Conraux; Yann - Grenoble FR
Conraux; Yann - 38000 Grenoble FR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Mlu-based Magnetic Device Having An Authentication And Physical Unclonable Function And Authentication Method Using Said Mlu Device App 20210110023 - Stainer; Quentin ; et al.	2021-04-15
Magnetoresistive-based signal shaping circuit for audio applications Grant 10,326,421 - Conraux , et al.	2019-06-18
Magnetoresistive-based Signal Shaping Circuit For Audio Applications App 20190081602 - Conraux; Yann ; et al.	2019-03-14
Method for writing in a magnetic device having a plurality of magnetic logical unit cells using a single programming current Grant 9,978,434 - Conraux May 22, 2	2018-05-22
Method For Writing In A Magnetic Device App 20170249982 - Conraux; Yann	2017-08-31
Self-referenced MRAM element and device having improved magnetic field Grant 9,461,093 - Conraux October 4, 2	2016-10-04
Self-referenced Mram Element And Device Having Improved Magnetic Field App 20150287764 - Conraux; Yann	2015-10-08
High speed magnetic random access memory-based ternary CAM Grant 8,885,379 - Alvarez-Herault , et al. November 11, 2	2014-11-11
High Speed Magnetic Random Access Memory-based Ternary CAM App 20130208523 - Alvarez-Herault; Jeremy ; et al.	2013-08-15
Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same Grant 7,332,781 - Nozieres , et al. February 19, 2	2008-02-19
Magnetic memory with write inhibit selection and the writing method for same Grant 7,129,555 - Nozieres , et al. October 31, 2	2006-10-31
Magnetic memory with write inhibit selection and the writing method for same App 20050047206 - Nozieres, Jean-Pierre ; et al.	2005-03-03
Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same App 20050040433 - Nozieres, Jean-Pierre ; et al.	2005-02-24

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