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name:-0.0079379081726074
name:-0.0080199241638184
name:-0.0028250217437744
Colalongo; Luigi Patent Filings

Colalongo; Luigi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Colalongo; Luigi.The latest application filed is for "embedded non-volatile memory with single polysilicon layer memory cells programmable through band-to-band tunneling-induced hot electron and erasable through fowler-nordheim tunneling".

Company Profile
1.7.7
  • Colalongo; Luigi - Bertinoro IT
  • Colalongo; Luigi - Bologna IT
  • Colalongo; Luigi - Bologna BO
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Embedded non-volatile memory with single polysilicon layer memory cells erasable through band to band tunneling induced hot electron and programmable through Fowler-Nordheim tunneling
Grant 10,468,425 - Milani , et al. No
2019-11-05
Embedded non-volatile memory with single polysilicon layer memory cells programmable through channel hot electrons and erasable through fowler-nordheim tunneling
Grant 9,368,209 - Milani , et al. June 14, 2
2016-06-14
Embedded non-volatile memory with single polysilicon layer memory cells programmable through band-to-band tunneling-induced hot electron and erasable through fowler-nordheim tunneling
Grant 9,361,982 - Milani , et al. June 7, 2
2016-06-07
Embedded Non-volatile Memory With Single Polysilicon Layer Memory Cells Programmable Through Band-to-band Tunneling-induced Hot Electron And Erasable Through Fowler-nordheim Tunneling
App 20150221372 - MILANI; Luca ;   et al.
2015-08-06
Embedded Non-volatile Memory With Single Polysilicon Layer Memory Cells Erasable Through Band To Band Tunneling Induced Hot Electron And Programmable Through Fowler-nordheim Tunneling
App 20150221661 - MILANI; Luca ;   et al.
2015-08-06
Embedded Non-volatile Memory With Single Polysilicon Layer Memory Cells Programmable Through Channel Hot Electrons And Erasable Through Fowler-nordheim Tunneling
App 20150221371 - Milani; Luca ;   et al.
2015-08-06
Non-volatile memory device with single-polysilicon-layer memory cells
Grant 8,873,291 - Torricelli , et al. October 28, 2
2014-10-28
Non-volatile Memory Device With Single-polysilicon-layer Memory Cells
App 20130343128 - TORRICELLI; Fabrizio ;   et al.
2013-12-26
Charge pump circuit with reuse of accumulated electrical charge
Grant 7,317,347 - Mensi , et al. January 8, 2
2008-01-08
Charge pump circuit with dynamic biasing of pass transistors
Grant 7,248,096 - Mensi , et al. July 24, 2
2007-07-24
Charge pump circuit with reuse of accumulated electrical charge
App 20060109048 - Mensi; Luca ;   et al.
2006-05-25
Charge pump circuit with dynamic biasing of pass transistors
App 20060109047 - Mensi; Luca ;   et al.
2006-05-25
Hybrid inductive-capacitive charge pump with high diode driving capability
Grant 7,034,601 - Carmina , et al. April 25, 2
2006-04-25
Hybrid inductive-capacitive charge pump with high diode driving capability
App 20040196094 - Carmina, Michele ;   et al.
2004-10-07

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