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Electrostatic discharge protection devices using carbon-based diodes Grant 11,387,277 - Bertin , et al. July 12, 2 | 2022-07-12 |
Electrostatic Discharge Protection Devices Using Carbon-Based Diodes App 20200403036 - BERTIN; Claude L. ;   et al. | 2020-12-24 |
Methods of making sealed resistive change elements Grant 10,741,761 - Cleavelin , et al. A | 2020-08-11 |
Non-linear resistive change memory cells and arrays Grant 10,700,131 - Bertin , et al. | 2020-06-30 |
Non-Linear Resistive Change Memory Cells and Arrays App 20190378879 - BERTIN; Claude L. ;   et al. | 2019-12-12 |
Methods of Making Sealed Resistive Change Elements App 20190341550 - Cleavelin; C. Rinn ;   et al. | 2019-11-07 |
Methods for forming crosspoint arrays of resistive change memory cells Grant 10,403,683 - Bertin , et al. Sep | 2019-09-03 |
Methods for Forming Crosspoint Arrays of Resistive Change Memory Cells App 20190221613 - BERTIN; Claude L. ;   et al. | 2019-07-18 |
Sealed resistive change elements Grant 10,355,206 - Cleavelin , et al. July 16, 2 | 2019-07-16 |
Resistive change elements incorporating carbon based diode select devices Grant 10,249,684 - Bertin , et al. | 2019-04-02 |
Sealed Resistive Change Elements App 20180226578 - Cleavelin; C. Rinn ;   et al. | 2018-08-09 |
Resistive Change Elements Incorporating Carbon Based Diode Select Devices App 20180197918 - BERTIN; Claude L. ;   et al. | 2018-07-12 |
Resistive change element array using vertically oriented bit lines Grant 9,917,139 - Bertin , et al. March 13, 2 | 2018-03-13 |
Cross point arrays of 1-R nonvolatile resistive change memory cells using continuous nanotube fabrics Grant 9,783,255 - Bertin , et al. October 10, 2 | 2017-10-10 |
Resistive Change Element Array Using Vertically Oriented Bit Lines App 20170200769 - Bertin; Claude L. ;   et al. | 2017-07-13 |
Cross Point Arrays Of 1-r Nonvolatile Resistive Change Memory Cells Using Continuous Nanotube Fabrics App 20160315122 - BERTIN; Claude L. ;   et al. | 2016-10-27 |
Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and MOSFET select devices for memory and logic applications Grant 9,390,790 - Bertin , et al. July 12, 2 | 2016-07-12 |
Methods for adjusting the conductivity range of a nanotube fabric layer Grant 8,941,094 - Cleavelin , et al. January 27, 2 | 2015-01-27 |
Carbon Based Nonvolatile Cross Point Memory Incorporating Carbon Based Diode Select Devices And Mosfet Select Devices For Memory And Logic Applications App 20140166959 - Bertin; Claude L. ;   et al. | 2014-06-19 |
Methods For Adjusting The Conductivity Range Of A Nanotube Fabric Layer App 20120056149 - CLEAVELIN; C. Rinn ;   et al. | 2012-03-08 |
Method For Resetting A Resistive Change Memory Element App 20110038195 - Hamilton; Darlene ;   et al. | 2011-02-17 |
Method for making planar nanowire surround gate mosfet App 20080014689 - Cleavelin; C. Rinn ;   et al. | 2008-01-17 |
Method to improve SRAM performance and stability Grant 7,189,627 - Wu , et al. March 13, 2 | 2007-03-13 |
Novel method to improve SRAM performance and stability App 20060040462 - Wu; Zhiqiang ;   et al. | 2006-02-23 |
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