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Patent applications and USPTO patent grants for Chung; Bu-Chin.The latest application filed is for "gas distributing injector applied in mocvd reactor".
Patent | Date |
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Gas Distributing Injector Applied In Mocvd Reactor App 20170314131 - Lin; Po-Jung ;   et al. | 2017-11-02 |
Fabrication Method Of Semiconductor Multilayer Structure App 20170117136 - KOBAYASHI; Takashi ;   et al. | 2017-04-27 |
System and method for controlling wafer and thin film surface temperature Grant 9,617,636 - Wu , et al. April 11, 2 | 2017-04-11 |
Method and system for manufacturing semiconductor epitaxy structure Grant 9,613,875 - Kobayashi , et al. April 4, 2 | 2017-04-04 |
Apparatus and method for curvature and thin film stress measurement Grant 9,551,569 - Wu , et al. January 24, 2 | 2017-01-24 |
Method And System For Manufacturing Semiconductor Epitaxy Structure App 20160379904 - KOBAYASHI; TAKASHI ;   et al. | 2016-12-29 |
Semiconductor Multilayer Structure And Fabrication Method Thereof App 20160293399 - KOBAYASHI; Takashi ;   et al. | 2016-10-06 |
Semiconductor Template And Manufacturing Method Thereof App 20160247886 - LIN; Po-Jung ;   et al. | 2016-08-25 |
Method and system for manufacturing semiconductor epitaxy structure Grant 9,406,536 - Kobayashi , et al. August 2, 2 | 2016-08-02 |
System And Method For Controlling Wafer And Thin Film Surface Temperature App 20160148803 - WU; CHUNG-YUAN ;   et al. | 2016-05-26 |
Apparatus And Method For Curvature And Thin Film Stress Measurement App 20160102968 - WU; Chung-Yuan ;   et al. | 2016-04-14 |
Vapor Phase Film Deposition Apparatus App 20150096496 - SUDA; Noboru ;   et al. | 2015-04-09 |
Method of fabricating flash memory cell Grant 5,837,585 - Wu , et al. November 17, 1 | 1998-11-17 |
Etch back method to planarize an interlayer having a critical HDP-CVD deposition process Grant 5,814,564 - Yao , et al. September 29, 1 | 1998-09-29 |
Plasma etch equipment Grant 5,587,039 - Salimian , et al. December 24, 1 | 1996-12-24 |
Plasma etch process Grant 5,376,223 - Salimian , et al. December 27, 1 | 1994-12-27 |
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