Chu; Rongming

Patent Applications and Registrations

Patent applications and USPTO patent grants for Chu; Rongming.The latest application filed is for "doped gate dielectrics materials".

Company Profile

13.59.43

Chu; Rongming - Agoura Hills CA
Chu; Rongming - Newbury Park CA
Chu; Rongming - Goleta CA
Chu; Rongming - Agoura Hils CA
Chu; Rongming - Calabasas CA US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Doped gate dielectrics materials Grant 11,437,485 - Cao , et al. September 6, 2	2022-09-06
In situ fabrication of horizontal nanowires and device using same Grant 11,361,965 - Kim , et al. June 14, 2	2022-06-14
III-nitride field-effect transistor with dual gates Grant 11,183,573 - Chu November 23, 2	2021-11-23
Doped Gate Dielectrics Materials App 20210151578 - CAO; Yu ; et al.	2021-05-20
Digital alloy based back barrier for P-channel nitride transistors Grant 10,943,998 - Chu , et al. March 9, 2	2021-03-09
Semiconductor device having in situ formed horizontal nanowire structure Grant 10,937,650 - Kim , et al. March 2, 2	2021-03-02
FET transistor on a III-V material structure with substrate transfer Grant 10,916,647 - Li , et al. February 9, 2	2021-02-09
Low modulation-voltage cryogenic diode structure Grant 10,910,793 - Yap , et al. February 2, 2	2021-02-02
Doped gate dielectric materials Grant 10,903,333 - Cao , et al. January 26, 2	2021-01-26
Iii-nitride Field-effect Transistor With Dual Gates App 20200273958 - Chu; Rongming	2020-08-27
Digital Alloy Based Back Barrier For P-channel Nitride Transistors App 20200227542 - CHU; Rongming ; et al.	2020-07-16
Low Modulation-voltage Cryogenic Diode Structure App 20200203931 - Yap; Daniel ; et al.	2020-06-25
III-nitride field-effect transistor with dual gates Grant 10,692,984 - Chu	2020-06-23
GaN-on-sapphire monolithically integrated power converter Grant 10,659,032 - Hughes , et al.	2020-05-19
Digital alloy based back barrier for P-channel nitride transistors Grant 10,651,306 - Chu , et al.	2020-05-12
In situ fabrication of horizontal nanowires and device using same Grant 10,535,518 - Kim , et al. Ja	2020-01-14
Etched spin-qubit for high temperature operation Grant 10,387,792 - Ladd , et al. A	2019-08-20
Iii-nitride Field-effect Transistor With Dual Gates App 20190189762 - CHU; Rongming	2019-06-20
GaN-ON-SAPPHIRE MONOLITHICALLY INTEGRATED POWER CONVERTER App 20190165776 - HUGHES; Brian ; et al.	2019-05-30
Fet Transistor On A Iii-v Material Structure With Substrate Transfer App 20190165154 - LI; Zijian "Ray" ; et al.	2019-05-30
Lateral GaN PN junction diode enabled by sidewall regrowth Grant 10,283,358 - Chu , et al.	2019-05-07
III-nitride field-effect transistor with dual gates Grant 10,276,712 - Chu	2019-04-30
FET transistor on a III-V material structure with substrate transfer Grant 10,263,104 - Li , et al.	2019-04-16
Digital Alloy Based Back Barrier For P-channel Nitride Transistors App 20190067464 - CHU; Rongming ; et al.	2019-02-28
Methods of forming reverse side engineered III-nitride devices Grant 10,199,217 - Chu , et al. Fe	2019-02-05
III-Nitride transistor with enhanced doping in base layer Grant 10,181,400 - Chu Ja	2019-01-15
GaN-on-sapphire monolithically integrated power converter Grant 10,153,761 - Hughes , et al. Dec	2018-12-11
Lateral Gan Pn Junction Diode Enabled By Sidewall Regrowth App 20180337042 - Chu; Rongming ; et al.	2018-11-22
Tunnel barrier schottky Grant 10,134,851 - Chu , et al. November 20, 2	2018-11-20
Tunnel Barrier Schottky App 20180114837 - Chu; Rongming ; et al.	2018-04-26
Doped Gate Dielectric Materials App 20180097081 - CAO; Yu ; et al.	2018-04-05
Stepped field plate wide bandgap field-effect transistor and method Grant 9,929,243 - Corrion , et al. March 27, 2	2018-03-27
Tunnel barrier schottky Grant 9,899,482 - Chu , et al. February 20, 2	2018-02-20
III-nitride transistor with trench gate Grant 9,865,725 - Chu January 9, 2	2018-01-09
Semiconductor devices with field plates Grant 9,831,315 - Chu , et al. November 28, 2	2017-11-28
III-nitride P-channel transistor Grant 9,812,532 - Chu , et al. November 7, 2	2017-11-07
III-nitride transistor with engineered substrate Grant 9,773,884 - Chu , et al. September 26, 2	2017-09-26
Iii-nitride Transistor With Enhanced Doping In Base Layer App 20170263769 - CHU; Rongming	2017-09-14
III-nitride transistor with enhanced doping in base layer Grant 9,761,709 - Chu September 12, 2	2017-09-12
Method for manufacturing a semiconductor structure having a passivated III-nitride layer Grant 9,761,438 - Chu , et al. September 12, 2	2017-09-12
Current aperture diode and method of fabricating the same Grant 9,691,909 - Chu June 27, 2	2017-06-27
Iii-nitride Field-effect Transistor With Dual Gates App 20170148912 - CHU; Rongming	2017-05-25
Ta based ohmic contact Grant 9,646,839 - Chen , et al. May 9, 2	2017-05-09
GaN-ON-SAPPHIRE MONOLITHICALLY INTEGRATED POWER CONVERTER App 20170104477 - HUGHES; Brian ; et al.	2017-04-13
Tunnel Barrier Schottky App 20170047453 - Chu; Rongming ; et al.	2017-02-16
Gallium nitride complementary transistors Grant 9,559,012 - Chu , et al. January 31, 2	2017-01-31
Methods Of Forming Reverse Side Engineered Iii-nitride Devices App 20170025267 - Chu; Rongming ; et al.	2017-01-26
Methods of forming reverse side engineered III-nitride devices Grant 9,496,137 - Chu , et al. November 15, 2	2016-11-15
III-Nitride Transistor With Trench Gate App 20160308040 - CHU; Rongming	2016-10-20
Semiconductor Devices With Field Plates App 20160293747 - Chu; Rongming ; et al.	2016-10-06
Ta Based Ohmic Contact App 20160276161 - CHEN; Mary Y. ; et al.	2016-09-22
Etch-based fabrication process for stepped field-plate wide-bandgap Grant 9,419,122 - Corrion , et al. August 16, 2	2016-08-16
Semiconductor devices with field plates Grant 9,373,699 - Chu , et al. June 21, 2	2016-06-21
III-Nitride insulating-gate transistors with passivation Grant 9,337,332 - Chu , et al. May 10, 2	2016-05-10
Iii-nitride Transistor With Enhanced Doping In Base Layer App 20160064555 - CHU; Rongming	2016-03-03
Iii-nitride Insulating-gate Transistors With Passivation App 20150349117 - CHU; Rongming ; et al.	2015-12-03
Etch-based fabrication process for stepped field-plate wide-bandgap Grant 9,202,880 - Corrion , et al. December 1, 2	2015-12-01
Current Aperture Diode And Method Of Fabricating The Same App 20150318373 - Chu; Rongming	2015-11-05
Fet Transistor On A Iii-v Material Structure With Substrate Transfer App 20150311330 - LI; Zijian "Ray" ; et al.	2015-10-29
Stepped field plate wide bandgap field-effect transistor and method Grant 9,142,626 - Corrion , et al. September 22, 2	2015-09-22
Current aperture diode and method of fabricating same Grant 9,117,935 - Chu August 25, 2	2015-08-25
Semiconductor devices with field plates Grant 9,111,961 - Chu , et al. August 18, 2	2015-08-18
Reduction of the inductance of power loop and gate loop in a half-bridge converter with vertical current loops Grant 9,077,335 - Hughes , et al. July 7, 2	2015-07-07
Semiconductor Devices With Field Plates App 20150187893 - Chu; Rongming ; et al.	2015-07-02
III-Nitride metal-insulator-semiconductor field-effect transistor Grant 9,059,200 - Chu , et al. June 16, 2	2015-06-16
Semiconductor heterostructure diodes Grant 9,041,065 - Wu , et al. May 26, 2	2015-05-26
Reduction Of The Inductance Of Power Loop And Gate Loop In A Half-bridge Converter With Vertical Current Loops App 20150116022 - Hughes; Brian ; et al.	2015-04-30
Normally-off III-nitride transistors with high threshold-voltage and low on-resistance Grant 8,941,118 - Chu , et al. January 27, 2	2015-01-27
III-nitride metal insulator semiconductor field effect transistor Grant 8,853,709 - Chu , et al. October 7, 2	2014-10-07
Iii-nitride Transistor With Engineered Substrate App 20140264361 - Chu; Rongming ; et al.	2014-09-18
Semiconductor Devices With Field Plates App 20140162421 - Chu; Rongming ; et al.	2014-06-12
Semiconductor devices with field plates Grant 8,692,294 - Chu , et al. April 8, 2	2014-04-08
Semiconductor Heterostructure Diodes App 20140054603 - Wu; Yifeng ; et al.	2014-02-27
AlGaN/GaN hybrid MOS-HFET Grant 8,653,559 - Corrion , et al. February 18, 2	2014-02-18
Current Aperture Diode And Method Of Fabricating Same App 20130341632 - Chu; Rongming	2013-12-26
Normally-off Gallium Nitride Transistor With Insulating Gate And Method Of Making The Same App 20130328061 - Chu; Rongming ; et al.	2013-12-12
High current high voltage GaN field effect transistors and method of fabricating same Grant 8,530,978 - Chu , et al. September 10, 2	2013-09-10
Methods Of Forming Reverse Side Engineered Iii-nitride Devices App 20130210220 - Chu; Rongming ; et al.	2013-08-15
Semiconductor Devices With Field Plates App 20130200435 - Chu; Rongming ; et al.	2013-08-08
Reverse side engineered III-nitride devices Grant 8,389,977 - Chu , et al. March 5, 2	2013-03-05
Semiconductor devices with field plates Grant 8,390,000 - Chu , et al. March 5, 2	2013-03-05
III-Nitride Metal Insulator Semiconductor Field effect Transistor App 20130026495 - Chu; Rongming ; et al.	2013-01-31
ALGaN/GaN HYBRID MOS-HFET App 20130001646 - Corrion; Andrea ; et al.	2013-01-03
Semiconductor heterostructure diodes Grant 8,237,198 - Wu , et al. August 7, 2	2012-08-07
Reverse Side Engineered Iii-nitride Devices App 20110140172 - Chu; Rongming ; et al.	2011-06-16
Semiconductor Heterostructure Diodes App 20110127541 - Wu; Yifeng ; et al.	2011-06-02
Semiconductor Devices with Field Plates App 20110049526 - Chu; Rongming ; et al.	2011-03-03
Semiconductor heterostructure diodes Grant 7,898,004 - Wu , et al. March 1, 2	2011-03-01
III-nitride devices and circuits Grant 7,884,394 - Wu , et al. February 8, 2	2011-02-08
III-Nitride Devices and Circuits App 20100201439 - Wu; Yifeng ; et al.	2010-08-12
Semiconductor Heterostructure Diodes App 20100140660 - Wu; Yifeng ; et al.	2010-06-10