Chu; Kang-Soo

Patent Applications and Registrations

Patent applications and USPTO patent grants for Chu; Kang-Soo.The latest application filed is for "method of fabricating semiconductor device having multiple gate dielectric layers and semiconductor device fabricated thereby".

Company Profile

0.11.16

Chu; Kang-Soo - Yongni-si KR
Chu; Kang-Soo - Tacan-eub KR
Chu; Kang-soo - Suwon KR
Chu; Kang-soo - Suwon-si KR
Chu; Kang-Soo - Yongin-si KR
Chu; Kang-soo - Suwon-city KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of fabricating semiconductor device having multiple gate dielectric layers and semiconductor device fabricated thereby Grant 7,846,790 - Kang , et al. December 7, 2	2010-12-07
Inkjet print head and method of fabricating the same Grant 7,726,777 - Min , et al. June 1, 2	2010-06-01
Electrode line structure having fine line width and method of forming the same Grant 7,510,969 - Lee , et al. March 31, 2	2009-03-31
MEMS tunable capacitor with a wide tuning range Grant 7,394,641 - Won , et al. July 1, 2	2008-07-01
Method Of Fabricating Semiconductor Device Having Multiple Gate Dielectric Layers And Semiconductor Device Fabricated Thereby App 20080099856 - Kang; Sung-Gun ; et al.	2008-05-01
Electrode line structure having fine line width and method of forming the same App 20070166885 - Lee; Joo-won ; et al.	2007-07-19
Method of fabricating MEMS tunable capacitor with wide tuning range Grant 7,203,052 - Won , et al. April 10, 2	2007-04-10
Electrode line structure having fine line width and method of forming the same Grant 7,180,190 - Lee , et al. February 20, 2	2007-02-20
MEMS tunable capacitor with a wide tuning range App 20060215348 - Won; Seok-Jun ; et al.	2006-09-28
Method of fabricating MEMS tunable capacitor with wide tuning range App 20060187611 - Won; Seok-Jun ; et al.	2006-08-24
Method for forming silicon dioxide film using siloxane Grant 7,084,076 - Park , et al. August 1, 2	2006-08-01
Inkjet print head and method of fabricating the same App 20060103693 - Min; Jae-Sik ; et al.	2006-05-18
MEMS tunable capacitor with a wide tuning range and method of fabricating the same Grant 7,042,698 - Won , et al. May 9, 2	2006-05-09
Semiconductor device with silicon dioxide layers formed using atomic layer deposition App 20060040510 - Lee; Joo-won ; et al.	2006-02-23
Methods for forming silicon dioxide layers on substrates using atomic layer deposition Grant 6,992,019 - Lee , et al. January 31, 2	2006-01-31
Method of forming fine patterns using silicon oxide layer Grant 6,989,231 - Park , et al. January 24, 2	2006-01-24
MEMS tunable capacitor with a wide tuning range and method of fabricating the same App 20050168910 - Won, Seok-Jun ; et al.	2005-08-04
Semiconductor device having an etch stopper formed of a SiN layer by low temperature ALD and method of fabricating the same App 20050146037 - Chu, Kang-soo ; et al.	2005-07-07
Semiconductor device having an etch stopper formed of a SiN layer by low temperature ALD and method of fabricating the same App 20050142781 - Chu, Kang-soo ; et al.	2005-06-30
Semiconductor device having an etch stopper formed of a sin layer by low temperature ALD and method of fabricating the same Grant 6,858,533 - Chu , et al. February 22, 2	2005-02-22
Method of manufacturing CMOS transistor with LDD structure App 20040180483 - Park, Jae-eun ; et al.	2004-09-16
Method for forming silicon dioxide film using siloxane App 20040180557 - Park, Jae-eun ; et al.	2004-09-16
Atomic layer deposition apparatus and method for preventing generation of solids in exhaust path App 20040107897 - Lee, Seung-Hwan ; et al.	2004-06-10
Electrode line structure having fine line width and method of forming the same App 20040056292 - Lee, Joo-Won ; et al.	2004-03-25
Semiconductor device having an etch stopper formed of a SiN layer by low temperature ALD and method of fabricating the same App 20040046189 - Chu, Kang-Soo ; et al.	2004-03-11
Method of forming fine patterns using silicon oxide layer App 20040029052 - Park, Jae-eun ; et al.	2004-02-12
Methods for forming silicon dioxide layers on substrates using atomic layer deposition App 20040018694 - Lee, Joo-won ; et al.	2004-01-29

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