Christiansen, Silke H.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Christiansen, Silke H..The latest application filed is for "high performance strained silicon finfets device and method for forming same".

Company Profile

0.5.5

Christiansen, Silke H. - Halle DE
Christiansen; Silke H. - Erlangen DE
Christiansen; Silke H. - Mount Kisco NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
High performance strained silicon FinFETs device and method for forming same App 20050145941 - Bedell, Stephen W. ; et al.	2005-07-07
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing Grant 6,855,649 - Christiansen , et al. February 15, 2	2005-02-15
Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same Grant 6,833,332 - Christiansen , et al. December 21, 2	2004-12-21
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing Grant 6,709,903 - Christiansen , et al. March 23, 2	2004-03-23
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing App 20030218189 - Christiansen, Silke H. ; et al.	2003-11-27
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing App 20030201468 - Christiansen, Silke H. ; et al.	2003-10-30
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing Grant 6,593,625 - Christiansen , et al. July 15, 2	2003-07-15
Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same App 20030127646 - Christiansen, Silke H. ; et al.	2003-07-10
Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same Grant 6,515,335 - Christiansen , et al. February 4, 2	2003-02-04
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing App 20020185686 - Christiansen, Silke H. ; et al.	2002-12-12

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