Chip Integration Tech. Co., Ltd.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Chip Integration Tech. Co., Ltd..The latest application filed is for "structure of trench-vertical double diffused mos transistor and method of forming the same".

Company Profile

1.18.16

Chip Integration Tech. Co., Ltd. - Zhubei N/A TW
Chip Integration Tech. Co., Ltd. - Zhubei City TW
Chip Integration Tech.Co., Ltd. - Zhubei, Hsinchu County N/A TW
CHIP INTEGRATION TECH. CO., LTD. - TW
Chip Integration Tech. Co., Ltd. - Chu-pei TW
Chip Integration Tech. Co., Ltd. - Hsinchu Hsien TW
Chip Integration Tech., Co., Ltd. - Hsin-Chu TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Structure of trench-vertical double diffused MOS transistor and method of forming the same Grant 10,529,844 - Jin J	2020-01-07
Structure of Trench-Vertical Double Diffused MOS Transistor and Method of Forming the Same App 20160329413 - Jin; Qinhai	2016-11-10
Dual trench rectifier and method for forming the same Grant 9,443,846 - Jin September 13, 2	2016-09-13
Structure of a trench MOS rectifier and method of forming the same Grant 9,406,788 - Jin August 2, 2	2016-08-02
Structure of a Trench MOS Rectifier and Method of Forming the Same App 20160111530 - Jin; QINHAI	2016-04-21
Structure of a trench MOS rectifier and method of forming the same Grant 9,276,096 - Jin March 1, 2	2016-03-01
Dual Trench Rectifier And Method For Forming The Same App 20150287720 - JIN; Qinhai	2015-10-08
Dual trench rectifier and method for forming the same Grant 9,117,902 - Jin August 25, 2	2015-08-25
Dual Trench Rectifier and Method for Forming the Same App 20150035047 - Jin; Qinhai	2015-02-05
Structure of a Trench MOS Rectifier and Method of Forming the Same App 20140374790 - JIN; QINHAI	2014-12-25
Structure of Trench-Vertical Double Diffused MOS Transistor and Method of Forming the Same App 20140374818 - Jin; Qinhai	2014-12-25
Dual Trench Mos Transistor And Method For Forming The Same App 20140374820 - Jin; Qinhai	2014-12-25
Dual trench MOS transistor and method for forming the same Grant 8,907,413 - Jin December 9, 2	2014-12-09
High switching speed two mask schottky diode with high field breakdown Grant 7,491,633 - Wu February 17, 2	2009-02-17
Silicon carbide Schottky diode and method of making the same Grant 7,368,371 - Wu May 6, 2	2008-05-06
Silicon carbide Schottky diode and method of making the same App 20070293001 - Wu; Shye-Lin	2007-12-20
High switching speed two mask schottky diode with high field breakdown App 20070290234 - Wu; Shye-Lin	2007-12-20
Method of forming low forward voltage Shottky barrier diode with LOCOS structure therein App 20070293028 - Wu; Shye-Lin	2007-12-20
Schottky barrier diode and method of making the same Grant 7,078,780 - Wu July 18, 2	2006-07-18
Schottky barrier diode and method of making the same Grant 7,064,408 - Wu June 20, 2	2006-06-20
High switching speed two mask Schottky diode with high field breakdown Grant 6,998,694 - Wu February 14, 2	2006-02-14
Two mask shottky diode with locos structure Grant 6,936,905 - Wu August 30, 2	2005-08-30
Schottky barrier diode and method of making the same App 20050127464 - Wu, Shye-Lin	2005-06-16
High switching speed two mask schottky diode with high field breakdown App 20050029614 - Wu, Shye-Lin	2005-02-10
Schottky diode with high field breakdown and low reverse leakage current Grant 6,825,073 - Wu November 30, 2	2004-11-30
Two mask shottky barrier diode with locos structure App 20040211974 - Wu, Shye-Lin	2004-10-28

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