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name:-0.017192125320435
name:-0.01090407371521
name:-0.0010480880737305
Chin; Tsung-Shune Patent Filings

Chin; Tsung-Shune

Patent Applications and Registrations

Patent applications and USPTO patent grants for Chin; Tsung-Shune.The latest application filed is for "absolute position readout apparatus".

Company Profile
1.10.18
  • Chin; Tsung-Shune - Taichung TW
  • CHIN; Tsung-Shune - Taichung City TW
  • Chin; Tsung-Shune - Hsinchu County TW
  • Chin; Tsung-Shune - Hsinchu N/A TW
  • Chin; Tsung-Shune - Baoshan Township TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Texture inducing structure for alloy films and texture inducing method thereof
Grant 10,580,558 - Hsiao , et al.
2020-03-03
Absolute position readout apparatus
Grant 10,480,963 - Hsiao , et al. Nov
2019-11-19
Absolute Position Readout Apparatus
App 20180364068 - HSIAO; HENG-SHENG ;   et al.
2018-12-20
Texture Inducing Structure For Alloy Films And Texture Inducing Method Thereof
App 20180358159 - HSIAO; Chi-Ju ;   et al.
2018-12-13
Absolute position detecting device and method
Grant 10,145,709 - Lin , et al. De
2018-12-04
Absolute Position Detecting Device And Method
App 20170254670 - Lin; Cheng-Yi ;   et al.
2017-09-07
Multi-layered phase-change memory device
Grant 9,337,421 - Chin , et al. May 10, 2
2016-05-10
Multi-slot microwave device and processing system thereof
Grant 9,006,626 - Chang , et al. April 14, 2
2015-04-14
Multi-Layered Phase-Change Memory Device
App 20130292631 - Chin; Tsung-Shune ;   et al.
2013-11-07
Multi-slot Microwave Device And Processing System Thereof
App 20130175261 - CHANG; TSUN-HSU ;   et al.
2013-07-11
Method of Crystallizing Amorphous Silicon Films by Microwave Irradiation
App 20130029497 - Chin; Tsung-Shune ;   et al.
2013-01-31
QUATERNARY GALLIUM TELLURIUM ANTIMONY (M-GaTeSb) BASED PHASE CHANGE MEMORY DEVICES
App 20120181499 - Chuang; Tung-Hua ;   et al.
2012-07-19
Phase-separation Type Phase-change Memory
App 20110155992 - Kao; Chin Fu ;   et al.
2011-06-30
Phase change memory device
Grant 7,906,774 - Chin , et al. March 15, 2
2011-03-15
Sheet anodes based on zinc-aluminum alloys and zinc-air batteries containing the same
Grant 7,838,158 - Chin , et al. November 23, 2
2010-11-23
Metallic Material Coated With Carbon Film
App 20100239854 - CHEN; Shi-Kun ;   et al.
2010-09-23
Ultra-thin Diffusion-barrier Layer For Cu Metallization
App 20090250816 - CHIN; Tsung Shune ;   et al.
2009-10-08
Phase Change Memory Device
App 20090194759 - Chin; Tsung-Shune ;   et al.
2009-08-06
Phase-change recording media based on the Ga-Sb-Te system for ultra-high density optical recording
Grant 7,371,448 - Chin , et al. May 13, 2
2008-05-13
Sheet anodes based on zinc-aluminum alloys and zinc-air batteries containing the same
App 20060003228 - Chin; Tsung-Shune ;   et al.
2006-01-05
Ternary and multi-nary iron-based bulk glassy alloys and nanocrystalline alloys
App 20050263216 - Chin, Tsung Shune ;   et al.
2005-12-01
Phase-change recording media based on the Ga-Sb-Te system for ultra-high density optical recording
App 20050136209 - Chin, Tsung Shune ;   et al.
2005-06-23
Rewritable phase-change optical recording composition and rewritable phase-change optical disk
Grant 6,410,117 - Chin , et al. June 25, 2
2002-06-25
Rewritable phase-change optical recording composition and rewritable phase-change optical disk
App 20020041947 - Chin, Tsung-Shune ;   et al.
2002-04-11

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