CHIN; Chih-Yun
Patent Applications and Registrations
Patent applications and USPTO patent grants for CHIN; Chih-Yun.The latest application filed is for "source/drain structure for semiconductor device".
- CHIN; Chih-Yun - Taichung City TW
- Chin; Chih-Yun - Taichung TW
| Patent | Date |
|---|---|
| Source/drain Structure For Semiconductor Device App 20220302281 - LEE; Chien-Wei ; et al. | 2022-09-22 |
| Method of epitaxy and semiconductor device Grant 11,264,237 - Chin , et al. March 1, 2 | 2022-03-01 |
| Semiconductor Device And Method App 20210265350 - Chin; Chih-Yun ; et al. | 2021-08-26 |
| Interfacial Layer Between Fin and Source/Drain Region App 20210193831 - Chin; Chih-Yun ; et al. | 2021-06-24 |
| Supportive Layer in Source/Drains of FinFET Devices App 20210083052 - Tai; Jung-Chi ; et al. | 2021-03-18 |
| Interfacial layer between fin and source/drain region Grant 10,944,005 - Chin , et al. March 9, 2 | 2021-03-09 |
| Supportive layer in source/drains of FinFET devices Grant 10,854,715 - Tai , et al. December 1, 2 | 2020-12-01 |
| Method of Epitaxy and Semiconductor Device App 20200105526 - Chin; Chih-Yun ; et al. | 2020-04-02 |
| Interfacial Layer Between Fin and Source/Drain Region App 20200006548 - Chin; Chih-Yun ; et al. | 2020-01-02 |
| Interfacial Layer Between Fin and Source/Drain Region App 20190378920 - Chin; Chih-Yun ; et al. | 2019-12-12 |
| Interfacial layer between fin and source/drain region Grant 10,483,396 - Chin , et al. Nov | 2019-11-19 |
| Supportive Layer in Source/Drains of FinFET Devices App 20190319098 - TAI; Roger ; et al. | 2019-10-17 |
| Semiconductor device and manufacturing method thereof Grant 10,164,097 - Lee , et al. Dec | 2018-12-25 |
| Semiconductor Device And Manufacturing Method Thereof App 20170077300 - LEE; Yen-Ru ; et al. | 2017-03-16 |
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