Patent | Date |
---|
Isolation Structure For Isolating Epitaxially Grown Source/Drain Regions And Method Of Fabrication Thereof App 20220293752 - Lin; Ta-Chun ;   et al. | 2022-09-15 |
Isolation Structure For Preventing Unintentional Merging Of Epitaxially Grown Source/Drain App 20220246613 - Lin; Ta-Chun ;   et al. | 2022-08-04 |
Isolation structure for for isolating epitaxially grown source/drain regions and method of fabrication thereof Grant 11,349,002 - Lin , et al. May 31, 2 | 2022-05-31 |
Isolation structure for preventing unintentional merging of epitaxially grown source/drain Grant 11,315,924 - Lin , et al. April 26, 2 | 2022-04-26 |
Isolation Structure for for Isolating Epitaxially Grown Source/Drain Regions and Method of Fabrication Thereof App 20220102509 - Lin; Ta-Chun ;   et al. | 2022-03-31 |
Isolation Structure for Preventing Unintentional Merging of Epitaxially Grown Source/Drain App 20210408000 - Lin; Ta-Chun ;   et al. | 2021-12-30 |
Substrate resistor and method of making same Grant 10,872,963 - Chen , et al. December 22, 2 | 2020-12-22 |
Substrate Resistor and Method of Making Same App 20190280097 - Chen; Hua Feng ;   et al. | 2019-09-12 |
Substrate resistor and method of making same Grant 10,297,669 - Chen , et al. | 2019-05-21 |
Semiconductor device with biased feature Grant 9,607,835 - Liu , et al. March 28, 2 | 2017-03-28 |
Substrate Resistor and Method of Making Same App 20170062578 - Chen; Hua Feng ;   et al. | 2017-03-02 |
Substrate resistor and method of making same Grant 9,496,325 - Chen , et al. November 15, 2 | 2016-11-15 |
FinFETs and methods for forming the same Grant 9,466,696 - Mor , et al. October 11, 2 | 2016-10-11 |
Control fin heights in FinFET structures Grant 9,460,970 - Mor , et al. October 4, 2 | 2016-10-04 |
Semiconductor Device With Biased Feature App 20150357460 - Liu; Chia-Chu ;   et al. | 2015-12-10 |
Semiconductor device with biased feature Grant 9,059,001 - Liu , et al. June 16, 2 | 2015-06-16 |
Control Fin Heights in FinFET Structures App 20150155208 - Mor; Yi-Shien ;   et al. | 2015-06-04 |
Control fin heights in FinFET structures Grant 8,975,698 - Mor , et al. March 10, 2 | 2015-03-10 |
Field effect transistors and method of forming the same Grant 8,969,922 - Liu , et al. March 3, 2 | 2015-03-03 |
FinFET design with LDD extensions Grant 8,865,560 - Mor , et al. October 21, 2 | 2014-10-21 |
Control Fin Heights in FinFET Structures App 20140103453 - Mor; Yi-Shien ;   et al. | 2014-04-17 |
Control fin heights in FinFET structures Grant 8,659,097 - Mor , et al. February 25, 2 | 2014-02-25 |
Substrate Resistor and Method of Making Same App 20130341731 - Chen; Hua Feng ;   et al. | 2013-12-26 |
FinFET Design with LDD Extensions App 20130228876 - Mor; Yi-Shien ;   et al. | 2013-09-05 |
Semiconductor Device and Method of Forming the Same App 20130200461 - Liu; Chia-Chu ;   et al. | 2013-08-08 |
FinFETs and Methods for Forming the Same App 20130187206 - Mor; Yi-Shien ;   et al. | 2013-07-25 |
Control Fin Heights in FinFET Structures App 20130181300 - Mor; Yi-Shien ;   et al. | 2013-07-18 |
Semiconductor Device With Biased Feature App 20130154004 - Liu; Chia-Chu ;   et al. | 2013-06-20 |
Semiconductor device and fabrication thereof Grant 8,421,166 - Chi , et al. April 16, 2 | 2013-04-16 |
Semiconductor Device And Fabrication Thereof App 20110260220 - CHI; Min-Hwa ;   et al. | 2011-10-27 |
Semiconductor device and fabrication thereof Grant 7,994,040 - Chi , et al. August 9, 2 | 2011-08-09 |
Source and drain structures and manufacturing methods Grant 7,649,226 - Liaw , et al. January 19, 2 | 2010-01-19 |
Quasi-plannar and FinFET-like transistors on bulk silicon Grant 7,564,105 - Chi , et al. July 21, 2 | 2009-07-21 |
Semiconductor device and fabrication thereof App 20080254579 - Chi; Min-Hwa ;   et al. | 2008-10-16 |
Source and drain structures and manufacturing methods App 20080185665 - Liaw; Jhon-Jhy ;   et al. | 2008-08-07 |
Amorphous carbon contact film for contact hole etch process Grant 7,371,634 - Chiang , et al. May 13, 2 | 2008-05-13 |
Method for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a Teos liner deposition Grant RE40,138 - Chiang , et al. March 4, 2 | 2008-03-04 |
Amorphous carbon contact film for contact hole etch process App 20060170058 - Chiang; Wen-Chuan ;   et al. | 2006-08-03 |
Quasi-plannar and FinFET-like transistors on bulk silicon App 20050239254 - Chi, Min-Hwa ;   et al. | 2005-10-27 |
Novel formation of an aluminum contact pad free of plasma induced damage by applying CMP App 20040175918 - Niu, Pao-Kang ;   et al. | 2004-09-09 |
Formation of an indium retrograde profile via antimony ion implantation to improve NMOS short channel effect Grant 6,500,739 - Wang , et al. December 31, 2 | 2002-12-31 |
Method of forming an indium retrograde profile via use of a low temperature anneal procedure to reduce NMOS short channel effects Grant 6,368,928 - Wang , et al. April 9, 2 | 2002-04-09 |
Method for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a teos liner deposition Grant 6,235,600 - Chiang , et al. May 22, 2 | 2001-05-22 |