Cheong; Kong-soo

Patent Applications and Registrations

Patent applications and USPTO patent grants for Cheong; Kong-soo.The latest application filed is for "trench isolation type semiconductor device which prevents a recess from being formed in a field region and method of fabricating the same".

Company Profile

0.7.7

Cheong; Kong-soo - Seoul KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Trench isolation type semiconductor device which prevents a recess from being formed in a field region and method of fabricating the same Grant 7,795,110 - Youn , et al. September 14, 2	2010-09-14
Method of manufacturing semiconductor device Grant 7,485,558 - Kang , et al. February 3, 2	2009-02-03
Trench isolation type semiconductor device which prevents a recess from being formed in a field region and method of fabricating the same App 20080188057 - Youn; Ki-Seog ; et al.	2008-08-07
Method of forming a metal gate in a semiconductor device Grant 7,361,565 - Shin , et al. April 22, 2	2008-04-22
Trench isolation type semiconductor device which prevents a recess from being formed in a field region Grant 7,358,588 - Youn , et al. April 15, 2	2008-04-15
Semiconductor device having MOS varactor and methods for fabricating the same Grant 7,094,694 - Cheong , et al. August 22, 2	2006-08-22
Trench isolation type semiconductor device and method of fabricating the same App 20060128114 - Youn; Ki-seog ; et al.	2006-06-15
Method of manufacturing semiconductor device App 20050164437 - Kang, Sung-Gun ; et al.	2005-07-28
Method of forming a metal gate in a semiconductor device App 20050158935 - Shin, Jeong-Ho ; et al.	2005-07-21
Semiconductor device having MOS varactor and methods for fabricating the same App 20050142779 - Cheong, Kong-Soo ; et al.	2005-06-30
Method of forming thick metal silicide layer on gate electrode Grant 6,878,598 - Jun , et al. April 12, 2	2005-04-12
Methods for fabricating MOS transistors with notched gate electrodes Grant 6,812,111 - Cheong , et al. November 2, 2	2004-11-02
Method of forming thick metal silicide layer on gate electrode App 20040132274 - Jun, Jin-Won ; et al.	2004-07-08
Methods for fabricating MOS transistors with notched gate electrodes App 20030143791 - Cheong, Kong-Soo ; et al.	2003-07-31

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