| Patent | Date |
|---|
Semiconductor die containing silicon nitride stress compensating regions and method for making the same
Grant 11,430,745 - Wu , et al. August 30, 2 | 2022-08-30 |
Bonded assembly formed by hybrid wafer bonding using selectively deposited metal liners
Grant 11,424,215 - Hou , et al. August 23, 2 | 2022-08-23 |
Interfacial Tilt-resistant Bonded Assembly And Methods For Forming The Same
App 20220173071 - HOU; Lin ; et al. | 2022-06-02 |
Interfacial tilt-resistant bonded assembly and methods for forming the same
Grant 11,348,901 - Hou , et al. May 31, 2 | 2022-05-31 |
Bonded Assembly Formed By Hybrid Wafer Bonding Using Selectively Deposited Metal Liners
App 20220149002 - HOU; Lin ; et al. | 2022-05-12 |
Bonded Assembly Including Interconnect-level Bonding Pads And Methods Of Forming The Same
App 20220093555 - HOU; Lin ; et al. | 2022-03-24 |
Embedded bonded assembly and method for making the same
Grant 11,276,705 - Wu , et al. March 15, 2 | 2022-03-15 |
Bonded assembly containing laterally bonded bonding pads and methods of forming the same
Grant 11,239,204 - Wu , et al. February 1, 2 | 2022-02-01 |
Semiconductor Die Containing Silicon Nitride Stress Compensating Regions And Method For Making The Same
App 20210272912 - WU; Chen ; et al. | 2021-09-02 |
Bonded assembly containing a dielectric bonding pattern definition layer and methods of forming the same
Grant 11,094,653 - Wu , et al. August 17, 2 | 2021-08-17 |
Bonded die assembly containing partially filled through-substrate via structures and methods for making the same
Grant 11,037,908 - Wu , et al. June 15, 2 | 2021-06-15 |
Bonded Assembly Containing Laterally Bonded Bonding Pads And Methods Of Forming The Same
App 20210159215 - WU; Chen ; et al. | 2021-05-27 |
Bonded Assembly Containing A Dielectric Bonding Pattern Definition Layer And Methods Of Forming The Same
App 20210143115 - WU; Chen ; et al. | 2021-05-13 |
Embedded Bonded Assembly And Method For Making The Same
App 20210066317 - WU; Chen ; et al. | 2021-03-04 |
Bonded Die Assembly Containing Partially Filled Through-substrate Via Structures And Methods For Making The Same
App 20210028148 - WU; Chen ; et al. | 2021-01-28 |
Three-dimensional memory device including germanium-containing vertical channels and method of making the same
Grant 10,756,186 - Chen , et al. A | 2020-08-25 |
Ferroelectric non-volatile memory
Grant 10,734,408 - Dong , et al. | 2020-08-04 |
Three-dimensional flat inverse NAND memory device and method of making the same
Grant 10,559,588 - Dong , et al. Feb | 2020-02-11 |
Ferroelectric Non-volatile Memory
App 20200020704 - Dong; Yingda ; et al. | 2020-01-16 |
Ferroelectric non-volatile memory
Grant 10,461,095 - Dong , et al. Oc | 2019-10-29 |
Ferroelectric non-volatile memory
Grant 10,453,862 - Dong , et al. Oc | 2019-10-22 |
Ferroelectric non-volatile memory
Grant 10,453,861 - Dong , et al. Oc | 2019-10-22 |
Three-dimensional Memory Device Including Germanium-containing Vertical Channels And Method Of Making The Same
App 20190319100 - Chen; Yangyin ; et al. | 2019-10-17 |
Ferroelectric Non-volatile Memory
App 20190304988 - Dong; Yingda ; et al. | 2019-10-03 |
Ferroelectric Non-volatile Memory
App 20190304987 - Dong; Yingda ; et al. | 2019-10-03 |
Ferroelectric Non-volatile Memory
App 20190304986 - Dong; Yingda ; et al. | 2019-10-03 |
Three-dimensional Flat Inverse Nand Memory Device And Method Of Making The Same
App 20190221575 - Dong; Yingda ; et al. | 2019-07-18 |
Wordline sidewall recess for integrating planar selector device
Grant 10,109,679 - Chen , et al. October 23, 2 | 2018-10-23 |
Three-level ferroelectric memory cell using band alignment engineering
Grant 10,038,092 - Chen , et al. July 31, 2 | 2018-07-31 |
Implementation of VMCO area switching cell to VBL architecture
Grant 10,026,782 - Tanaka , et al. July 17, 2 | 2018-07-17 |
Three-dimensional ferroelectric memory device and method of making thereof
Grant 9,941,299 - Chen , et al. April 10, 2 | 2018-04-10 |
Device with sub-minimum pitch and method of making
Grant 9,941,331 - Katine , et al. April 10, 2 | 2018-04-10 |
Implementation Of Vmco Area Switching Cell To Vbl Architecture
App 20170309681 - Tanaka; Yoichiro ; et al. | 2017-10-26 |
Methods and apparatus for three-dimensional nonvolatile memory
Grant 9,768,180 - Zhou , et al. September 19, 2 | 2017-09-19 |
Vacancy-modulated conductive oxide resistive RAM device including an interfacial oxygen source layer
Grant 9,754,665 - Chen , et al. September 5, 2 | 2017-09-05 |
Implementation Of Vmco Area Switching Cell To Vbl Architecture
App 20170236871 - Tanaka; Yoichiro ; et al. | 2017-08-17 |
Wordline Sidewall Recess For Integrating Planar Selector Device
App 20170236873 - Chen; Yangyin ; et al. | 2017-08-17 |
Implementation of VMCO area switching cell to VBL architecture
Grant 9,735,202 - Tanaka , et al. August 15, 2 | 2017-08-15 |
Vacancy-modulated Conductive Oxide Resistive Ram Device Including An Interfacial Oxygen Source Layer
App 20170221559 - Chen; Yangyin ; et al. | 2017-08-03 |
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