Patent | Date |
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Semiconductor Device With Voltage-sustaining Region Constructed By Semiconductor And Insulator Containing Conductive Regions App 20150318346 - CHEN; XINGBI | 2015-11-05 |
Both carriers controlled thyristor Grant 8,994,067 - Chen March 31, 2 | 2015-03-31 |
Surface (lateral) voltage-sustaining region with an insulator film containing conductive particles Grant 8,941,207 - Chen January 27, 2 | 2015-01-27 |
Both Carriers Controlled Thyristor App 20140048843 - Chen; Xingbi | 2014-02-20 |
Surface (Lateral) Voltage-sustaining Region with an Insulator Film Containing Conductive Particles App 20130175657 - Chen; Xingbi | 2013-07-11 |
Voltage-Sustaining Layer Consisting of Semiconductor and Insulator Containing Conductive Particles for Semiconductor Device App 20130168729 - Chen; Xingbi | 2013-07-04 |
High speed IGBT Grant 8,378,427 - Chen February 19, 2 | 2013-02-19 |
Low voltage power supply Grant 8,294,215 - Chen October 23, 2 | 2012-10-23 |
Lateral Schottky diode Grant 8,242,533 - Chen August 14, 2 | 2012-08-14 |
Lateral high-voltage semiconductor devices with majorities of both types for conduction Grant 8,159,026 - Chen April 17, 2 | 2012-04-17 |
Semiconductor device Grant 8,134,206 - Chen March 13, 2 | 2012-03-13 |
Voltage Sustaining Layer Wiht Opposite-doped Island For Seminconductor Power Devices App 20120040521 - CHEN; Xingbi | 2012-02-16 |
Low Voltage Power Supply App 20110163351 - CHEN; Xingbi | 2011-07-07 |
Lateral High-Voltage Semiconductor Devices with Majorities of Both Types for Conduction App 20100252883 - Chen; Xingbi | 2010-10-07 |
Lateral Schottky Diode App 20100244089 - Chen; Xingbi | 2010-09-30 |
Semiconductor device with a U-shape drift region Grant 7,795,638 - Chen September 14, 2 | 2010-09-14 |
High Speed Igbt App 20100219446 - Chen; Xingbi | 2010-09-02 |
Semiconductor Device App 20100171193 - Chen; Xingbi | 2010-07-08 |
Method of producing a low-voltage power supply in a power integrated circuit Grant 7,701,006 - Chen April 20, 2 | 2010-04-20 |
Lateral high-voltage devices with optimum variation lateral flux by using field plate Grant 7,659,596 - Chen February 9, 2 | 2010-02-09 |
Method Of Producing A Low-voltage Power Supply In A Power Integrated Circuit App 20090284306 - CHEN; Xingbi | 2009-11-19 |
Method for Forming Voltage Sustaining Layer with Opposite-Doped Islands for Semiconductor Power Devices App 20090130828 - Chen; Xingbi | 2009-05-21 |
Semiconductor Device With A U-shape Drift Region App 20090057711 - Chen; Xingbi | 2009-03-05 |
Lateral High-voltage Devices With Optimum Variation Lateral Flux By Using Field Plate App 20080067624 - Chen; Xingbi | 2008-03-20 |
Super-junction voltage sustaining layer with alternating semiconductor and High-K dielectric regions Grant 7,230,310 - Chen June 12, 2 | 2007-06-12 |
Semiconductor high-voltage devices Grant 7,227,197 - Chen June 5, 2 | 2007-06-05 |
Method of manufacturing semiconductor device having composite buffer layer Grant 7,192,872 - Chen March 20, 2 | 2007-03-20 |
Voltage sustaining layer with opposite-doped islands for semiconductor power devices App 20060177995 - Chen; Xingbi | 2006-08-10 |
Lateral low-side and high-side high-voltage devices Grant 6,998,681 - Chen February 14, 2 | 2006-02-14 |
Lateral high-voltage semiconductor devices with surface covered by thin film of dielectric material with high permittivity Grant 6,936,907 - Chen August 30, 2 | 2005-08-30 |
Semiconductor high-voltage devices Grant 6,936,867 - Chen August 30, 2 | 2005-08-30 |
Semiconductor devices App 20050116284 - Chen, Xingbi | 2005-06-02 |
Lateral low-side and high-side high-voltage devices App 20050110097 - Chen, Xingbi | 2005-05-26 |
Semiconductor high-voltage devices App 20050035406 - Chen, Xingbi | 2005-02-17 |
Method of manufacturing semiconductor device having composite buffer layer App 20050029222 - Chen, Xingbi | 2005-02-10 |
Lateral high-voltage semiconductor devices with surface covered by thin film of dielectric material with high permittivity App 20040041237 - Chen, Xingbi | 2004-03-04 |
Voltage sustaining layer with opposite-doped islands for semi-conductor power devices Grant 6,635,906 - Chen October 21, 2 | 2003-10-21 |
Semiconductor high-voltage devices App 20030160281 - Chen, Xingbi | 2003-08-28 |
Surface voltage sustaining structure for semiconductor devices having floating voltage terminal Grant 6,310,365 - Chen October 30, 2 | 2001-10-30 |
Surface voltage sustaining structure for semiconductor devices Grant 5,726,469 - Chen March 10, 1 | 1998-03-10 |
Semiconductor power devices with alternating conductivity type high-voltage breakdown regions Grant 5,216,275 - Chen June 1, 1 | 1993-06-01 |