loadpatents
name:-0.029492139816284
name:-0.02450704574585
name:-0.0016469955444336
Chen; Qufei Patent Filings

Chen; Qufei

Patent Applications and Registrations

Patent applications and USPTO patent grants for Chen; Qufei.The latest application filed is for "transistor structure with improved unclamped inductive switching immunity".

Company Profile
1.28.22
  • Chen; Qufei - San Jose CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Transistor structure with improved unclamped inductive switching immunity
Grant 10,181,523 - Zhang , et al. Ja
2019-01-15
MOSFET active area and edge termination area charge balance
Grant 10,084,037 - Chen , et al. September 25, 2
2018-09-25
Transistor Structure With Improved Unclamped Inductive Switching Immunity
App 20180212048 - Zhang; Wenjie ;   et al.
2018-07-26
Semiconductor device with trench-like feed-throughs
Grant 10,032,901 - Pattanayak , et al. July 24, 2
2018-07-24
Ultra-low drain-source resistance power MOSFET
Grant 9,887,266 - Chau , et al. February 6, 2
2018-02-06
Breakdown voltage blocking device
Grant 9,722,041 - Xu , et al. August 1, 2
2017-08-01
Transistor structure with improved unclamped inductive switching immunity
Grant 9,716,166 - Zhang , et al. July 25, 2
2017-07-25
Mosfet Active Area And Edge Termination Area Charge Balance
App 20170117354 - Chen; Qufei ;   et al.
2017-04-27
Semiconductor Device With Trench-like Feed-throughs
App 20170025527 - Pattanayak; Deva ;   et al.
2017-01-26
MOSFET active area and edge termination area charge balance
Grant 9,484,451 - Chen , et al. November 1, 2
2016-11-01
Super junction trench power MOSFET device fabrication
Grant 9,443,974 - Gao , et al. September 13, 2
2016-09-13
Trench polysilicon diode
Grant 9,431,550 - Chen , et al. August 30, 2
2016-08-30
Super-high density trench MOSFET
Grant 9,431,530 - Xu , et al. August 30, 2
2016-08-30
Super junction trench power MOSFET devices
Grant 9,425,306 - Gao , et al. August 23, 2
2016-08-23
Transistor structure with improved unclamped inductive switching immunity
Grant 9,425,304 - Zhang , et al. August 23, 2
2016-08-23
Transistor Structure With Improved Unclamped Inductive Switching Immunity
App 20160218196 - Zhang; Wenjie ;   et al.
2016-07-28
Semiconductor device with trench-like feed-throughs
Grant 9,306,056 - Pattanayak , et al. April 5, 2
2016-04-05
Transistor Structure With Improved Unclamped Inductive Switching Immunity
App 20160056276 - Zhang; Wenjie ;   et al.
2016-02-25
Breakdown Voltage Blocking Device
App 20140077287 - Xu; Robert Q. ;   et al.
2014-03-20
Ultra-low drain-source resistance power MOSFET
Grant 8,409,954 - Chau , et al. April 2, 2
2013-04-02
Method Of Forming A Hybrid Split Gate Simiconductor
App 20120220092 - Bobde; Madhur ;   et al.
2012-08-30
Hybrid Split Gate Semiconductor
App 20120211828 - Bobde; Madhur ;   et al.
2012-08-23
Trench Polysilicon Diode
App 20120068178 - Chen; Qufei ;   et al.
2012-03-22
Trench polysilicon diode
Grant 8,072,013 - Chen , et al. December 6, 2
2011-12-06
Semiconductor Device With Trench-like Feed-throughs
App 20110101525 - Pattanayak; Deva ;   et al.
2011-05-05
Super-high Density Trench Mosfet
App 20110089486 - Xu; Robert Q. ;   et al.
2011-04-21
Super Junction Trench Power Mosfet Device Fabrication
App 20110053326 - Gao; Yang ;   et al.
2011-03-03
Super Junction Trench Power Mosfet Devices
App 20110049614 - Gao; Yang ;   et al.
2011-03-03
Termination for trench MIS device
Grant 7,795,675 - Darwish , et al. September 14, 2
2010-09-14
Trench polysilicon diode
Grant 7,612,431 - Chen , et al. November 3, 2
2009-11-03
Trench polysilicon diode
Grant 7,544,545 - Chen , et al. June 9, 2
2009-06-09
Mosfet Active Area And Edge Termination Area Charge Balance
App 20090090967 - Chen; Qufei ;   et al.
2009-04-09
Ultra-low drain-source resistance power MOSFET
App 20080157281 - Chau; The-Tu ;   et al.
2008-07-03
Trench polysilicon diode
App 20080135872 - Chen; Qufei ;   et al.
2008-06-12
Ultra-low drain-source resistance power MOSFET
App 20070221989 - Chau; The-Tu ;   et al.
2007-09-27
Termination for trench MIS device having implanted drain-drift region
Grant 7,268,032 - Darwish , et al. September 11, 2
2007-09-11
Trench polysilicon diode
App 20070145411 - Chen; Qufei ;   et al.
2007-06-28
Termination for trench MIS device having implanted drain-drift region
Grant 7,045,857 - Darwish , et al. May 16, 2
2006-05-16
Termination for trench MIS device having implanted drain-drift region
App 20060019448 - Darwish; Mohamed N. ;   et al.
2006-01-26
Termination for trench MIS device having implanted drain-drift region
App 20060011976 - Darwish; Mohamed N. ;   et al.
2006-01-19
Termination for trench MIS device having implanted drain-drift region
App 20050215011 - Darwish, Mohamed N. ;   et al.
2005-09-29

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.

© 2024 USPTO.report | Privacy Policy | Resources | RSS Feed of Trademarks | Trademark Filings Twitter Feed