Chen; Peijun J.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Chen; Peijun J..The latest application filed is for "metal-germanium physical vapor deposition for semiconductor device defect reduction".

Company Profile

0.10.10

Chen; Peijun J. - Dallas TX
Chen; Peijun J. - Pittsburgh PA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Metal-germanium physical vapor deposition for semiconductor device defect reduction Grant 7,803,703 - Yue , et al. September 28, 2	2010-09-28
Nickel alloy silicide including indium and a method of manufacture therefor Grant 7,511,350 - Chen , et al. March 31, 2	2009-03-31
Metal-germanium Physical Vapor Deposition For Semiconductor Device Defect Reduction App 20080311747 - Yue; Doufeng ; et al.	2008-12-18
Metal-germanium physical vapor deposition for semiconductor device defect reduction Grant 7,435,672 - Yue , et al. October 14, 2	2008-10-14
Nickel Alloy Silicide Including Indium and a Method of Manufacture Therefor App 20080128837 - Chen; Peijun J. ; et al.	2008-06-05
Nickel silicide including indium and a method of manufacture therefor Grant 7,355,255 - Chen , et al. April 8, 2	2008-04-08
Nickel alloy silicide including indium and a method of manufacture therefor Grant 7,344,985 - Chen , et al. March 18, 2	2008-03-18
Nickel silicide including indium and a method of manufacture therefor App 20070141840 - Chen; Peijun J. ; et al.	2007-06-21
Nickel silicide including indium and a method of manufacture therefor Grant 7,211,516 - Chen , et al. May 1, 2	2007-05-01
Metal-halogen physical vapor deposition for semiconductor device defect reduction Grant 7,208,398 - Chen , et al. April 24, 2	2007-04-24
Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffing Grant 7,199,032 - Yue , et al. April 3, 2	2007-04-03
Nickel Alloy Silicide Including Indium And A Method Of Manufacture Therefor App 20070049022 - Chen; Peijun J. ; et al.	2007-03-01
Treatment of silicon prior to nickel silicide formation Grant 7,132,365 - Crank , et al. November 7, 2	2006-11-07
Nickel silicide including indium and a method of manufacture therefor App 20060223295 - Chen; Peijun J. ; et al.	2006-10-05
Treatment of silicon prior to nickel silicide formation App 20060035463 - Crank; Sue Ellen ; et al.	2006-02-16
Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffing App 20060024935 - Yue; Duofeng ; et al.	2006-02-02
Metal-germanium physical vapor deposition for semiconductor device defect reduction App 20060024963 - Yue; Doufeng ; et al.	2006-02-02
Method for reducing metal silicide excessive encroachment defects in the manufacture of a semiconductor device having silicided source/drain regions App 20060024938 - Yue; Duofeng ; et al.	2006-02-02
Metal-halogen physical vapor deposition for semiconductor device defect reduction App 20050208762 - Chen, Peijun J. ; et al.	2005-09-22
Process for controlling silicon etching by atomic hydrogen Grant 5,286,340 - Yates, Jr. , et al. February 15, 1	1994-02-15

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