loadpatents
Patent applications and USPTO patent grants for Chen; Meng-Ku.The latest application filed is for "semiconductor device and method".
Patent | Date |
---|---|
Semiconductor device and method Grant 11,211,470 - Chen , et al. December 28, 2 | 2021-12-28 |
Semiconductor Device and Method App 20210119013 - Chen; Meng-Ku ;   et al. | 2021-04-22 |
Semiconductor structures and methods of forming the same Grant 10,923,566 - Huang , et al. February 16, 2 | 2021-02-16 |
Semiconductor structure and manufacturing method thereof Grant 9,997,397 - Lee , et al. June 12, 2 | 2018-06-12 |
Semiconductor device and formation thereof Grant 9,735,261 - Huang , et al. August 15, 2 | 2017-08-15 |
Integrated circuit device having III-V compound semiconductor region comprising magnesium and N-type impurity and overlying III-V compound semiconductor layer formed without Cp2Mg precursor Grant 9,660,031 - Chang , et al. May 23, 2 | 2017-05-23 |
Semiconductor Structures And Methods Of Forming The Same App 20160343804 - HUANG; YU-LIEN ;   et al. | 2016-11-24 |
Method of forming nanowires Grant 9,437,699 - Huang , et al. September 6, 2 | 2016-09-06 |
Semiconductor Structure And Manufacturing Method Thereof App 20160240427 - LEE; Tung-Ying ;   et al. | 2016-08-18 |
Epitaxial structures Grant 9,397,169 - Chen , et al. July 19, 2 | 2016-07-19 |
Double stepped semiconductor substrate Grant 9,356,102 - Chen , et al. May 31, 2 | 2016-05-31 |
Method Of Forming Nanowires App 20160099328 - HUANG; YU-LIEN ;   et al. | 2016-04-07 |
Method of Tuning Doping Concentration in III-V Compound Semiconductor through Co-Doping Donor and Acceptor Impurities App 20160079366 - Chang; Huicheng ;   et al. | 2016-03-17 |
Semiconductor Device And Formation Thereof App 20160071966 - Huang; Mao-Lin ;   et al. | 2016-03-10 |
Method of tuning doping concentration in III-V compound semiconductor through co-doping donor and acceptor impurities Grant 9,224,815 - Chen , et al. December 29, 2 | 2015-12-29 |
Double Stepped Semiconductor Substrate App 20150333129 - Chen; Meng-Ku ;   et al. | 2015-11-19 |
Semiconductor device and formation thereof Grant 9,184,289 - Huang , et al. November 10, 2 | 2015-11-10 |
Delta doping layer in MOSFET source/drain region Grant 9,166,035 - Lin , et al. October 20, 2 | 2015-10-20 |
Double stepped semiconductor substrate Grant 9,099,311 - Chen , et al. August 4, 2 | 2015-08-04 |
Epitaxial Structures and Methods of Forming the Same App 20150200258 - Chen; Meng-Ku ;   et al. | 2015-07-16 |
Tuning Doping Concentration in III-V Compound Semiconductor through Co-Doping App 20150194490 - Chen; Meng-Ku ;   et al. | 2015-07-09 |
Semiconductor Device And Formation Thereof App 20150129938 - Huang; Mao-Lin ;   et al. | 2015-05-14 |
Methods of forming epitaxial structures Grant 9,029,246 - Chen , et al. May 12, 2 | 2015-05-12 |
Delta Doping Layer In Mosfet Source/drain Region App 20150069467 - LIN; HUNG-TA ;   et al. | 2015-03-12 |
Epitaxial Structures and Methods of Forming the Same App 20150035113 - Chen; Meng-Ku ;   et al. | 2015-02-05 |
FinFETs and methods for forming the same Grant 8,822,290 - Lin , et al. September 2, 2 | 2014-09-02 |
Double Stepped Semiconductor Substrate App 20140209974 - Chen; Meng-Ku ;   et al. | 2014-07-31 |
FinFETs and Methods for Forming the Same App 20140213031 - Lin; Hung-Ta ;   et al. | 2014-07-31 |
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