loadpatents
name:-0.0007789134979248
name:-0.015526056289673
name:-0.00068497657775879
Chen; Jun W. Patent Filings

Chen; Jun W.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Chen; Jun W..The latest application filed is for "mos transistor having adjusted threshold voltage formed along with other transistors".

Company Profile
0.13.0
  • Chen; Jun W. - Saratoga CA
  • Chen; Jun W. - Sarasota CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
MOS transistor having adjusted threshold voltage formed along with other transistors
Grant 5,618,743 - Williams , et al. April 8, 1
1997-04-08
BiCDMOS process technology
Grant 5,559,044 - Williams , et al. September 24, 1
1996-09-24
Method for forming a zener diode region and an isolation region
Grant 5,547,880 - Williams , et al. August 20, 1
1996-08-20
Structure of power mosfets, including termination structures
Grant 5,521,409 - Hshieh , et al. May 28, 1
1996-05-28
Bidirectional blocking lateral MOSFET with improved on-resistance
Grant 5,451,533 - Williams , et al. September 19, 1
1995-09-19
Low on-resistance power MOS technology
Grant 5,429,964 - Yilmaz , et al. July 4, 1
1995-07-04
BICDMOS structures
Grant 5,426,328 - Yilmaz , et al. June 20, 1
1995-06-20
BiCDMOS structure
Grant 5,422,508 - Yilmaz , et al. June 6, 1
1995-06-06
Bidirectional blocking lateral MOSFET with improved on-resistance
Grant 5,420,451 - Williams , et al. May 30, 1
1995-05-30
Method of making BiCDMOS structures
Grant 5,416,039 - Yilmaz , et al. May 16, 1
1995-05-16
Structure and fabrication of power MOSFETs, including termination structures
Grant 5,404,040 - Hshieh , et al. April 4, 1
1995-04-04
Method for forming a BiCDMOS
Grant 5,374,569 - Yilmaz , et al. December 20, 1
1994-12-20
Low on-resistance power MOS technology
Grant 5,304,831 - Yilmaz , et al. April 19, 1
1994-04-19

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