| Patent | Date |
|---|
Semiconductor Device With Gate Isolation Features And Fabrication Method Of The Same
App 20220285512 - Cheng; Jung-Chien ; et al. | 2022-09-08 |
Hybrid Semiconductor Device
App 20220254776 - Cheng; Jung-Chien ; et al. | 2022-08-11 |
Nanosheet Devices With Hybrid Structures And Methods Of Fabricating The Same
App 20220254882 - Chiang; Kuo-Cheng ; et al. | 2022-08-11 |
Uniform Gate Width For Nanostructure Devices
App 20220246614 - Huang; Jui-Chien ; et al. | 2022-08-04 |
Self-Aligned Spacers For Multi-Gate Devices And Method Of Fabrication Thereof
App 20220238725 - Chiang; Kuo-Cheng ; et al. | 2022-07-28 |
Isolation Structures And Methods Of Forming The Same In Field-Effect Transistors
App 20220238717 - Ju; Shi Ning ; et al. | 2022-07-28 |
Nanostructure Field-Effect Transistor Device and Method of Forming
App 20220230922 - Chen; Guan-Lin ; et al. | 2022-07-21 |
Semiconductor Devices and Methods
App 20220231139 - Ju; Shi Ning ; et al. | 2022-07-21 |
Integration Of Silicon Channel Nanostructures And Silicon-germanium Channel Nanostructures
App 20220231017 - JU; Shi Ning ; et al. | 2022-07-21 |
Gap-insulated Semiconductor Device
App 20220216203 - Cheng; Jung-Chien ; et al. | 2022-07-07 |
Semiconductor Structure With Hybrid Nanostructures
App 20220173213 - LAN; Wen-Ting ; et al. | 2022-06-02 |
Semiconductor Device with Gate Isolation Structure and Method for Forming the Same
App 20220139914 - Cheng; Jung-Chien ; et al. | 2022-05-05 |
Interleaved Three Phase Y-delta Connected Power Converter
App 20220140738 - Lin; Jing-Yuan ; et al. | 2022-05-05 |
Semiconductor Device Structure
App 20220130955 - Cheng; Eric ; et al. | 2022-04-28 |
Semiconductor Structure And Method Of Fabricating The Semiconductor Structure
App 20220130958 - CHEN; GUAN-LIN ; et al. | 2022-04-28 |
Uniform gate width for nanostructure devices
Grant 11,315,925 - Huang , et al. April 26, 2 | 2022-04-26 |
Self-aligned spacers for multi-gate devices and method of fabrication thereof
Grant 11,302,825 - Ching , et al. April 12, 2 | 2022-04-12 |
Semiconductor devices and methods
Grant 11,296,199 - Ju , et al. April 5, 2 | 2022-04-05 |
Integration of silicon channel nanostructures and silicon-germanium channel nanostructures
Grant 11,296,081 - Ju , et al. April 5, 2 | 2022-04-05 |
Method for manufacturing semiconductor structure with hybrid nanostructures
Grant 11,257,903 - Lan , et al. February 22, 2 | 2022-02-22 |
Multigate Device With Air Gap Spacer And Backside Rail Contact And Method Of Fabricating Thereof
App 20220037496 - CHEN; Guan-Lin ; et al. | 2022-02-03 |
Spacer Structure For Nano-Sheet-Based Devices
App 20220037509 - Huang; Jui-Chien ; et al. | 2022-02-03 |
Semiconductor structure and method of fabricating the semiconductor structure
Grant 11,222,948 - Chen , et al. January 11, 2 | 2022-01-11 |
Integration Of Silicon Channel Nanostructures And Silicon-germanium Channel Nanostructures
App 20210407993 - JU; Shi Ning ; et al. | 2021-12-30 |
Fin Recess Last Process For Finfet Fabrication
App 20210391420 - Chiang; Kuo-Cheng ; et al. | 2021-12-16 |
Structure and formation method of semiconductor device with stressor
Grant 11,201,225 - Chiang , et al. December 14, 2 | 2021-12-14 |
Gate Isolation for Multigate Device
App 20210375858 - Chiang; Kuo-Cheng ; et al. | 2021-12-02 |
Self-Aligned Metal Gate for Multigate Device
App 20210343600 - Chen; Guan-Lin ; et al. | 2021-11-04 |
Tuning Tensile Strain on FinFET
App 20210343716 - Chiang; Kuo-Cheng ; et al. | 2021-11-04 |
Multi-Layer Channel Structures And Methods Of Fabricating The Same In Field-Effect Transistors
App 20210336024 - Chen; Guan-Lin ; et al. | 2021-10-28 |
Multi-gate device and related methods
Grant 11,121,036 - Ching , et al. September 14, 2 | 2021-09-14 |
Fin recess last process for FinFET fabrication
Grant 11,121,213 - Chiang , et al. September 14, 2 | 2021-09-14 |
Recessing STI to increase FIN height in FIN-first process
Grant 11,114,550 - Chiang , et al. September 7, 2 | 2021-09-07 |
Tuning tensile strain on FinFET
Grant 11,075,201 - Chiang , et al. July 27, 2 | 2021-07-27 |
Semiconductor Structure With Hybrid Nanostructures And Method For Forming The Same
App 20210159311 - LAN; Wen-Ting ; et al. | 2021-05-27 |
Structure And Formation Method Of Semiconductor Device With Stressor
App 20210135011 - JU; Shi-Ning ; et al. | 2021-05-06 |
Structure And Formation Method Of Semiconductor Device With Stressor
App 20210135008 - CHIANG; Kuo-Cheng ; et al. | 2021-05-06 |
FinFET structure and method for fabricating the same
Grant 10,998,425 - Chiang , et al. May 4, 2 | 2021-05-04 |
Semiconductor Devices and Methods
App 20210126097 - Ju; Shi Ning ; et al. | 2021-04-29 |
Semiconductor Structure And Method Of Fabricating The Semiconductor Structure
App 20210098573 - CHEN; GUAN-LIN ; et al. | 2021-04-01 |
Uniform Gate Width for Nanostructure Devices
App 20210066294 - Huang; Jui-Chien ; et al. | 2021-03-04 |
Self-aligned spacers for multi-gate devices and method of fabrication thereof
Grant 10,930,794 - Ching , et al. February 23, 2 | 2021-02-23 |
Multi-gate Device And Related Methods
App 20200119004 - CHING; Kuo-Cheng ; et al. | 2020-04-16 |
Integrated circuit structure with substrate isolation and un-doped channel
Grant 10,622,464 - Ching , et al. | 2020-04-14 |
Method for determining a threshold voltage for obtaining a batch of sensing chips with increased sensitivity and method for increasing sensitivity of the batch of sensing chips
Grant 10,580,961 - Hong , et al. | 2020-03-03 |
Self-Aligned Spacers for Multi-Gate Devices and Method of Fabrication Thereof
App 20200052132 - Ching; Kuo-Cheng ; et al. | 2020-02-13 |
Tuning Tensile Strain on FinFET
App 20200006344 - Chiang; Kuo-Cheng ; et al. | 2020-01-02 |
Self-Aligned Spacers for Multi-Gate Devices and Method of Fabrication Thereof
App 20200006577 - Ching; Kuo-Cheng ; et al. | 2020-01-02 |
Tuning tensile strain on FinFET
Grant 10,453,842 - Ching , et al. Oc | 2019-10-22 |
Recessing STI to Increase FIN Height in FIN-First Process
App 20190245066 - Chiang; Kuo-Cheng ; et al. | 2019-08-08 |
Integrated Circuit Structure with Substrate Isolation and Un-Doped Channel
App 20190123180 - Ching; Kuo-Cheng ; et al. | 2019-04-25 |
FinFET Structure and Method for Fabricating the Same
App 20190123177 - Ching; Kuo-Cheng ; et al. | 2019-04-25 |
Recessing STI to increase Fin height in Fin-first process
Grant 10,269,933 - Ching , et al. | 2019-04-23 |
Fin Recess Last Process for FinFET Fabrication
App 20190027558 - Ching; Kuo-Cheng ; et al. | 2019-01-24 |
Integrated circuit structure with substrate isolation and un-doped channel
Grant 10,170,592 - Ching , et al. J | 2019-01-01 |
FinFET structure and method for fabricating the same
Grant 10,164,068 - Ching , et al. Dec | 2018-12-25 |
Method For Determining A Threshold Voltage For Obtaining A Batch Of Sensing Chips With Increased Sensitivity And Method For Increasing Sensitivity Of The Batch Of Sensing Chips
App 20180331278 - HONG; Chien-Chong ; et al. | 2018-11-15 |
Fin recess last process for FinFET fabrication
Grant 10,121,851 - Ching , et al. November 6, 2 | 2018-11-06 |
Semiconductor devices with horizontal gate all around structure and methods of forming the same
Grant 10,115,788 - Ching , et al. October 30, 2 | 2018-10-30 |
Isolation structure of fin field effect transistor
Grant 10,084,071 - Ching , et al. September 25, 2 | 2018-09-25 |
FinFET with buried insulator layer and method for forming
Grant 9,978,870 - Ching , et al. May 22, 2 | 2018-05-22 |
FINFET Structure and Method for Fabricating the Same
App 20180040720 - Ching; Kuo-Cheng ; et al. | 2018-02-08 |
Semiconductor device and formation thereof
Grant 9,870,949 - Ching , et al. January 16, 2 | 2018-01-16 |
Isolation Structure of Fin Field Effect Transistor
App 20180012977 - Ching; Kuo-Cheng ; et al. | 2018-01-11 |
Semiconductor device and formation thereof
Grant 9,837,537 - Ching , et al. December 5, 2 | 2017-12-05 |
FinFET structure and method for fabricating the same
Grant 9,806,178 - Ching , et al. October 31, 2 | 2017-10-31 |
Isolation structure of fin field effect transistor
Grant 9,773,892 - Ching , et al. September 26, 2 | 2017-09-26 |
Semiconductor Device And Formation Thereof
App 20170221765 - CHING; Kuo-Cheng ; et al. | 2017-08-03 |
Tuning Tensile Strain on FinFET
App 20170213830 - Ching; Kuo-Cheng ; et al. | 2017-07-27 |
Tuning tensile strain on FinFET
Grant 9,627,385 - Ching , et al. April 18, 2 | 2017-04-18 |
Semiconductor device and formation thereof
Grant 9,627,264 - Ching , et al. April 18, 2 | 2017-04-18 |
FINFET Structure and Method for Fabricating the Same
App 20170092746 - Ching; Kuo-Cheng ; et al. | 2017-03-30 |
Integrated Circuit Structure with Substrate Isolation and Un-Doped Channel
App 20170047432 - Ching; Kuo-Cheng ; et al. | 2017-02-16 |
Recessing STI to Increase FIN Height in FIN-First Process
App 20160372580 - Ching; Kuo-Cheng ; et al. | 2016-12-22 |
FinFET structure and method for fabricating the same
Grant 9,520,498 - Ching , et al. December 13, 2 | 2016-12-13 |
Method of generating a curve to determine an optimal operation of a wafer
App 20160334456 - Cheng; Ya-Ching ; et al. | 2016-11-17 |
Semiconductor Device And Formation Thereof
App 20160329250 - Ching; Kuo-Cheng ; et al. | 2016-11-10 |
Integrated circuit structure with substrate isolation and un-doped channel
Grant 9,484,461 - Ching , et al. November 1, 2 | 2016-11-01 |
Antioxidant Conductive Copper Ink And Method For Preparing The Same
App 20160284890 - CHANG; WEI-CHEN ; et al. | 2016-09-29 |
Recessing STI to increase fin height in fin-first process
Grant 9,443,962 - Ching , et al. September 13, 2 | 2016-09-13 |
Semiconductor device and formation thereof
Grant 9,406,778 - Ching , et al. August 2, 2 | 2016-08-02 |
Fin Recess Last Process for FinFet Fabrication
App 20160190242 - Ching; Kuo-Cheng ; et al. | 2016-06-30 |
Isolation Structure of Fin Field Effect Transistor
App 20160172470 - Ching; Kuo-Cheng ; et al. | 2016-06-16 |
Recessing STI to increase Fin height in Fin-first process
Grant 9,349,837 - Ching , et al. May 24, 2 | 2016-05-24 |
Semiconductor Devices With Horizontal Gate All Around Structure And Methods Of Forming The Same
App 20160104765 - CHING; KUO-CHENG ; et al. | 2016-04-14 |
Isolation structure of fin field effect transistor
Grant 9,306,069 - Ching , et al. April 5, 2 | 2016-04-05 |
Integrated Circuit Structure with Substrate Isolation and Un-Doped Channel
App 20160093726 - Ching; Kuo-Cheng ; et al. | 2016-03-31 |
FinFET with Buried Insulator Layer and Method for Forming
App 20160087103 - Ching; Kuo-Cheng ; et al. | 2016-03-24 |
Fin recess last process for FinFET fabrication
Grant 9,281,378 - Ching , et al. March 8, 2 | 2016-03-08 |
Tuning Tensile Strain on FinFET
App 20160056157 - Ching; Kuo-Cheng ; et al. | 2016-02-25 |
Method for fabricating silicon-doped or boron-doped aluminum electrode
Grant 9,245,758 - Ma , et al. January 26, 2 | 2016-01-26 |
FinFET with buried insulator layer and method for forming
Grant 9,196,522 - Ching , et al. November 24, 2 | 2015-11-24 |
Tuning tensile strain on FinFET
Grant 9,153,668 - Ching , et al. October 6, 2 | 2015-10-06 |
FINFET Structure and Method for Fabricating the Same
App 20150263159 - Ching; Kuo-Cheng ; et al. | 2015-09-17 |
Semiconductor Device And Formation Thereof
App 20150236114 - Ching; Kuo-Cheng ; et al. | 2015-08-20 |
Semiconductor Device And Formation Thereof
App 20150200267 - Ching; Kuo-Cheng ; et al. | 2015-07-16 |
FinFET with Buried Insulator Layer and Method for Forming
App 20150102411 - Ching; Kuo-Cheng ; et al. | 2015-04-16 |
Isolation Structure of Fin Field Effect Transistor
App 20150069474 - Ching; Kuo-Cheng ; et al. | 2015-03-12 |
Method For Fabricating Silicon-doped Or Boron-doped Aluminum Electrode
App 20150072468 - MA; WEI-YANG ; et al. | 2015-03-12 |
Tuning Tensile Strain on FinFET
App 20140346607 - Ching; Kuo-Cheng ; et al. | 2014-11-27 |
Recessing Sti To Increase Fin Height In Fin-first Process
App 20140312398 - Ching; Kuo-Cheng ; et al. | 2014-10-23 |
Recessing Sti To Increase Fin Height In Fin-first Process
App 20140306297 - Ching; Kuo-Cheng ; et al. | 2014-10-16 |
Fin Recess Last Process for FinFET Fabrication
App 20140131776 - Ching; Kuo-Cheng ; et al. | 2014-05-15 |
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