loadpatents
name:-0.016338109970093
name:-0.023941040039062
name:-0.0016188621520996
Chen; Chun-Hon Patent Filings

Chen; Chun-Hon

Patent Applications and Registrations

Patent applications and USPTO patent grants for Chen; Chun-Hon.The latest application filed is for "novel method to fabricate high reliable metal capacitor within copper back-end process".

Company Profile
0.16.10
  • Chen; Chun-Hon - Jubei TW
  • Chen; Chun-Hon - Hsin-chu TW
  • Chen; Chun-Hon - Jhubei TW
  • Chen, Chun-Hon - Jhubei City TW
  • Chen, Chun-Hon - Jubei City TW
  • Chen; Chun-Hon - Lung-Jing Village TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
High density MIM capacitor structure and fabrication process
Grant 7,317,221 - Chang , et al. January 8, 2
2008-01-08
Method of making a metal-insulator-metal capacitor in the CMOS process
Grant 7,294,544 - Ho , et al. November 13, 2
2007-11-13
Method to fabricate high reliable metal capacitor within copper back-end process
Grant 7,122,878 - Huang , et al. October 17, 2
2006-10-17
Integrated capacitor
Grant 7,050,290 - Tang , et al. May 23, 2
2006-05-23
Interdigitated capacitor and method for fabrication thereof
Grant 7,035,083 - Lin , et al. April 25, 2
2006-04-25
Novel method to fabricate high reliable metal capacitor within copper back-end process
App 20050221575 - Huang, Chi-Feng ;   et al.
2005-10-06
Metal-over-metal devices and the method for manufacturing same
Grant 6,949,781 - Chang , et al. September 27, 2
2005-09-27
Interdigitated capacitor and method for fabrication therof
App 20050206469 - Lin, Wen-Chin ;   et al.
2005-09-22
Integrated capacitor
App 20050168914 - Tang, Denny ;   et al.
2005-08-04
Method to fabricate high reliable metal capacitor within copper back-end process
Grant 6,916,722 - Huang , et al. July 12, 2
2005-07-12
High density MIM capacitor structure and fabrication process
App 20050121744 - Chang, Kuan-Lun ;   et al.
2005-06-09
Compact capacitor structure having high unit capacitance
App 20050082592 - Chang, Chung Long ;   et al.
2005-04-21
Metal-insulator-metal (MIM) capacitor structure in copper-CMOS circuits using a pad protect layer
Grant 6,881,996 - Chen , et al. April 19, 2
2005-04-19
Metal-over-metal devices and the method for manufacturing same
App 20050077581 - Chang, Chung-Long ;   et al.
2005-04-14
Method for making a new metal-insulator-metal (MIM) capacitor structure in copper-CMOS circuits using a pad protect layer
App 20050029566 - Chen, Chun-Hon ;   et al.
2005-02-10
Method for making a new metal-insulator-metal (MIM) capacitor structure in copper-CMOS circuits using a pad protect layer
Grant 6,812,088 - Chen , et al. November 2, 2
2004-11-02
Novel method to fabricate high reliable metal capacitor within copper back-end process
App 20040106266 - Huang, Chi-Feng ;   et al.
2004-06-03
Microelectronic fabrication having sidewall passivated microelectronic capacitor structure fabricated therein
Grant 6,734,079 - Huang , et al. May 11, 2
2004-05-11
Method of fabricating a damascene copper inductor structure using a sub-0.18 um CMOS process
Grant 6,667,217 - Hsu , et al. December 23, 2
2003-12-23
Microelectronic fabrication having sidewall passivated microelectronic capacitor structure fabricated therein
App 20030232481 - Huang, Chi-Feng ;   et al.
2003-12-18
Microelectronic fabrication having microelectronic capacitor structure fabricated therein
Grant 6,583,491 - Huang , et al. June 24, 2
2003-06-24
Dual damascene interconnect structures that include radio frequency capacitors and inductors
Grant 6,472,721 - Ma , et al. October 29, 2
2002-10-29
Copper MIM structure and process for mixed-signal and Rf capacitors and inductors
App 20020019123 - Ma, Ssu-Pin ;   et al.
2002-02-14
Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow
Grant 6,329,234 - Ma , et al. December 11, 2
2001-12-11
Method for manufacturing a silicide to silicide capacitor
Grant 6,051,475 - Ho , et al. April 18, 2
2000-04-18
Gate dielectric based on oxynitride grown in N.sub.2 O and annealed in NO
Grant 5,880,040 - Sun , et al. March 9, 1
1999-03-09

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