Chen; Chao-Hsuing

Patent Applications and Registrations

Patent applications and USPTO patent grants for Chen; Chao-Hsuing.The latest application filed is for "source/drain recess volume trim for improved device performance and layout dependence".

Company Profile

0.20.18

Chen; Chao-Hsuing - Tainan TW
Chen; Chao-Hsuing - Tainan City TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Source/drain recess volume trim for improved device performance and layout dependence Grant 10,158,004 - Chen , et al. Dec	2018-12-18
Floating grid and crown-shaping poly for improving ILD CMP dishing Grant 9,853,149 - Chen , et al. December 26, 2	2017-12-26
Surface profile for semiconductor region Grant 9,831,314 - Chen , et al. November 28, 2	2017-11-28
Source/drain Recess Volume Trim For Improved Device Performance And Layout Dependence App 20170317186 - Chen; Chao-Hsuing ; et al.	2017-11-02
V-shaped SiGe recess volume trim for improved device performance and layout dependence Grant 9,735,252 - Chen , et al. August 15, 2	2017-08-15
Methods and apparatus for doped SiGe source/drain stressor deposition Grant 9,722,082 - Chen , et al. August 1, 2	2017-08-01
Semiconductor device and manufacturing method thereof Grant 9,691,903 - Chen , et al. June 27, 2	2017-06-27
Semiconductor Device And Manufacturing Method Thereof App 20170012128 - CHEN; Chao-Hsuing ; et al.	2017-01-12
Semiconductor device and manufacturing method thereof Grant 9,530,889 - Chen December 27, 2	2016-12-27
Semiconductor Device And Manufacturing Method Thereof App 20160343845 - CHEN; Chao-Hsuing	2016-11-24
V-shaped Sige Recess Volume Trim For Improved Device Performance And Layout Dependence App 20160254366 - Chen; Chao-Hsuing ; et al.	2016-09-01
Semiconductor device and manufacturing method thereof Grant 9,425,313 - Chen , et al. August 23, 2	2016-08-23
Methods and Apparatus for Doped SiGe Source/Drain Stressor Deposition App 20160240673 - Chen; Chao-Hsuing ; et al.	2016-08-18
V-shaped SiGe recess volume trim for improved device performance and layout dependence Grant 9,385,215 - Chen , et al. July 5, 2	2016-07-05
Methods and apparatus for doped SiGe source/drain stressor deposition Grant 9,324,836 - Chen , et al. April 26, 2	2016-04-26
Semiconductor device having V-shaped region Grant 9,269,812 - Chen , et al. February 23, 2	2016-02-23
Methods and Apparatus for Doped SiGe Source/Drain Stressor Deposition App 20150349090 - Chen; Chao-Hsuing ; et al.	2015-12-03
Surface Profile For Semiconductor Region App 20150340447 - Chen; Chao-Hsuing ; et al.	2015-11-26
SiGe SRAM butted contact resistance improvement Grant 9,196,545 - Chen , et al. November 24, 2	2015-11-24
Methods and apparatus for doped SiGe source/drain stressor deposition Grant 9,142,642 - Chen , et al. September 22, 2	2015-09-22
Surface profile for semiconductor region Grant 9,099,421 - Chen , et al. August 4, 2	2015-08-04
SRAM cells with dummy insertions Grant 9,053,974 - Chen , et al. June 9, 2	2015-06-09
Semiconductor Device Having V-shaped Region App 20150137182 - Chen; Chao-Hsuing ; et al.	2015-05-21
Semiconductor device having v-shaped region Grant 8,940,594 - Chen , et al. January 27, 2	2015-01-27
SiGe SRAM BUTTED CONTACT RESISTANCE IMPROVEMENT App 20140295630 - Chen; Chao-Hsuing ; et al.	2014-10-02
V-shaped Sige Recess Volume Trim For Improved Device Performance And Layout Dependence App 20140264440 - Chen; Chao-Hsuing ; et al.	2014-09-18
SiGe SRAM butted contact resistance improvement Grant 8,766,256 - Chen , et al. July 1, 2	2014-07-01
Semiconductor Device Having V-shaped Region App 20140175556 - Chen; Chao-Hsuing ; et al.	2014-06-26
Surface Profile For Semiconductor Region App 20140117512 - Chen; Chao-Hsuing ; et al.	2014-05-01
SRAM Cells with Dummy Insertions App 20140054716 - Chen; Chao-Hsuing ; et al.	2014-02-27
SiGe SRAM BUTTED CONTACT RESISTANCE IMPROVEMENT App 20130328127 - Chen; Chao-Hsuing ; et al.	2013-12-12
Methods and Apparatus for Doped SiGe Source/Drain Stressor Deposition App 20130207166 - Chen; Chao-Hsuing ; et al.	2013-08-15

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