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Optical coupler having anchored cantilever structure with multi-stage inverse taper core waveguide and fabrication method thereof Grant 9,946,029 - Shi , et al. April 17, 2 | 2018-04-17 |
Heel test block Grant 9,810,667 - Chen , et al. November 7, 2 | 2017-11-07 |
Silicon-based rib-waveguide modulator and fabrication method thereof Grant 9,429,776 - Shi , et al. August 30, 2 | 2016-08-30 |
Heel Test Block App 20160231292 - Zhang; Li ;   et al. | 2016-08-11 |
Electro-optic silicon modulator with longitudinally nonuniform modulation Grant 9,285,651 - Chen , et al. March 15, 2 | 2016-03-15 |
Optical Coupler Having Anchored Cantilever Structure With Multi-Stage Inverse Taper Core Waveguide And Fabrication Method Thereof App 20160041340 - Shi; Tuo ;   et al. | 2016-02-11 |
Silicon-Based Rib-Waveguide Modulator And Fabrication Method Thereof App 20150378185 - Shi; Tuo ;   et al. | 2015-12-31 |
Electro-optic silicon modulator with alternative capacitance-loaded coplanar waveguide structures Grant 9,223,185 - Chen , et al. December 29, 2 | 2015-12-29 |
Polarization Rotator-Splitter/Combiner Based On Silicon Rib-Type Waveguides App 20150338577 - Shi; Tuo ;   et al. | 2015-11-26 |
Electro-Optic Silicon Modulator With Capacitive Loading In Both Slots Of Coplanar Waveguides App 20150043866 - Chen; Changhua ;   et al. | 2015-02-12 |
Electro-Optic Silicon Modulator With Longitudinally Nonuniform Modulation App 20140241658 - Chen; Changhua ;   et al. | 2014-08-28 |
Systems and Methods for Providing a Computing Device Having a Secure Operating System Kernel App 20120216281 - Uner; Eric Ridvan ;   et al. | 2012-08-23 |
Formation of Ohmic contacts in III-nitride light emitting devices Grant 7,345,323 - Goetz , et al. March 18, 2 | 2008-03-18 |
Formation of Ohmic contacts in III-nitride light emitting devices App 20050167693 - Goetz, Werner K. ;   et al. | 2005-08-04 |
Formation of Ohmic contacts in III-nitride light emitting devices Grant 6,914,272 - Goetz , et al. July 5, 2 | 2005-07-05 |
Light emitting diode Grant 6,888,171 - Liu , et al. May 3, 2 | 2005-05-03 |
Minority carrier semiconductor devices with improved reliability Grant 6,794,731 - Stockman , et al. September 21, 2 | 2004-09-21 |
Formation of Ohmic contacts in III-nitride light emitting devices App 20040075097 - Goetz, Werner K. ;   et al. | 2004-04-22 |
Formation of ohmic contacts in III-nitride light emitting devices Grant 6,657,300 - Goetz , et al. December 2, 2 | 2003-12-02 |
InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire Grant 6,630,695 - Chen , et al. October 7, 2 | 2003-10-07 |
Epitaxial material grown laterally within a trench and method for producing same Grant 6,500,257 - Wang , et al. December 31, 2 | 2002-12-31 |
InGaN/A1GaN/GaN Multilayer Buffer for Growth of GaN on Sapphire App 20020175337 - Chen, Changhua ;   et al. | 2002-11-28 |
Light emitting diode App 20020079500 - Liu, Heng ;   et al. | 2002-06-27 |
Formation of ohmic contacts in III-nitride light emitting devices App 20020008243 - Goetz, Werner K. ;   et al. | 2002-01-24 |
Minority Carrier Semiconductor Devices With Improved Reliabilty App 20020003237 - STOCKMAN, STEPHEN A. ;   et al. | 2002-01-10 |
Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices Grant 6,274,399 - Kern , et al. August 14, 2 | 2001-08-14 |
Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices Grant 6,194,742 - Kern , et al. February 27, 2 | 2001-02-27 |