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Patent applications and USPTO patent grants for Chang; Ying-Ian.The latest application filed is for "system and method for increasing nitrogen incorporation into a semiconductor material layer using an additional element".
Patent | Date |
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System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom Grant 6,934,312 - Takeuchi , et al. August 23, 2 | 2005-08-23 |
System and method for increasing nitrogen incorporation into a semiconductor material layer using an additional element Grant 6,887,727 - Takeuchi , et al. May 3, 2 | 2005-05-03 |
System and method for increasing nitrogen incorporation into a semiconductor material layer using an additional element App 20040147052 - Takeuchi, Tetsuya ;   et al. | 2004-07-29 |
InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP Grant 6,730,944 - Tandon , et al. May 4, 2 | 2004-05-04 |
System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom App 20040062283 - Takeuchi, Tetsuya ;   et al. | 2004-04-01 |
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