| Patent | Date |
|---|
Inverted J-lead for power devices
Grant 7,633,140 - Luo , et al. December 15, 2 | 2009-12-15 |
Power semiconductor package
Grant 7,208,818 - Luo , et al. April 24, 2 | 2007-04-24 |
Power semiconductor package
App 20060017141 - Luo; Leeshawn ; et al. | 2006-01-26 |
Multiple device package
App 20050280133 - Luo, Leeshawn ; et al. | 2005-12-22 |
Inverted J-lead package for power devices
App 20050127532 - Luo, Leeshawn ; et al. | 2005-06-16 |
Method of operation of punch-through field effect transistor
Grant 6,444,527 - Floyd , et al. September 3, 2 | 2002-09-03 |
Method Of Operation Of Punch-through Field Effect Transistor
App 20020055232 - FLOYD, BRIAN H. ; et al. | 2002-05-09 |
Method of forming vertical planar DMOSFET with self-aligned contact
Grant 6,277,695 - Williams , et al. August 21, 2 | 2001-08-21 |
Method of fabricating a field effect transistor
Grant 6,090,716 - Floyd , et al. July 18, 2 | 2000-07-18 |
Method of making punch-through field effect transistor
Grant 6,069,043 - Floyd , et al. May 30, 2 | 2000-05-30 |
Trench field effect transistor with reduced punch-through susceptibility and low R.sub.DSon
Grant 5,981,344 - Hshieh , et al. November 9, 1 | 1999-11-09 |
High density trench DMOS transistor with trench bottom implant
Grant 5,929,481 - Hshieh , et al. July 27, 1 | 1999-07-27 |
Trenched field effect transistor with PN depletion barrier
Grant 5,917,216 - Floyd , et al. June 29, 1 | 1999-06-29 |
Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof
Grant 5,910,669 - Chang , et al. June 8, 1 | 1999-06-08 |
Trenched DMOS transistor with lightly doped tub
Grant 5,821,583 - Hshieh , et al. October 13, 1 | 1998-10-13 |
Surface mount and flip chip technology with diamond film passivation for total integated circuit isolation
Grant 5,767,578 - Chang , et al. June 16, 1 | 1998-06-16 |
Surface mount and flip chip technology for total integrated circuit isolation
Grant 5,757,081 - Chang , et al. May 26, 1 | 1998-05-26 |
Surface mount and flip chip technology for total integrated circuit isolation
Grant 5,753,529 - Chang , et al. May 19, 1 | 1998-05-19 |
High density trenched DMOS transistor
Grant 5,689,128 - Hshieh , et al. November 18, 1 | 1997-11-18 |
Trenched DMOS transistor fabrication having thick termination region oxide
Grant 5,639,676 - Hshieh , et al. June 17, 1 | 1997-06-17 |
Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness
Grant 5,629,543 - Hshieh , et al. May 13, 1 | 1997-05-13 |
Punch-through field effect transistor
Grant 5,592,005 - Floyd , et al. January 7, 1 | 1997-01-07 |
Trenched DMOS transistor having thick field oxide in termination region
Grant 5,578,851 - Hshieh , et al. November 26, 1 | 1996-11-26 |
Trench field effect transistor with reduced punch-through susceptibility and low R.sub.DSon
Grant 5,558,313 - Hshieh , et al. September 24, 1 | 1996-09-24 |
Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof
Grant 5,532,179 - Chang , et al. July 2, 1 | 1996-07-02 |
Reliability test method for semiconductor trench devices
Grant 5,486,772 - Hshieh , et al. January 23, 1 | 1996-01-23 |
Method for fabricating a short channel trenched DMOS transistor
Grant 5,474,943 - Hshieh , et al. December 12, 1 | 1995-12-12 |
Trenched DMOS transistor with channel block at cell trench corners
Grant 5,468,982 - Hshieh , et al. November 21, 1 | 1995-11-21 |
Metal crossover in high voltage IC with graduated doping control
Grant 5,426,325 - Chang , et al. June 20, 1 | 1995-06-20 |
Short channel trenched DMOS transistor
Grant 5,341,011 - Hshieh , et al. August 23, 1 | 1994-08-23 |
Trenched DMOS transistor fabrication using six masks
Grant 5,316,959 - Kwan , et al. May 31, 1 | 1994-05-31 |
Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs
Grant 5,132,753 - Chang , et al. July 21, 1 | 1992-07-21 |
IGT and MOSFET devices having reduced channel width
Grant 4,803,533 - Chang , et al. February 7, 1 | 1989-02-07 |
Method of making a power IC structure with enhancement and/or CMOS logic
Grant 4,795,716 - Yilmaz , et al. January 3, 1 | 1989-01-03 |
Open tube aluminum oxide disc diffusion
Grant 4,239,560 - Chang , et al. December 16, 1 | 1980-12-16 |
Open tube aluminum diffusion
Grant 4,235,650 - Chang , et al. November 25, 1 | 1980-11-25 |
Semiconductor device manufacture
Grant 4,108,685 - Chang , et al. * August 22, 1 | 1978-08-22 |
Temperature gradient zone melting through an oxide layer
Grant 4,076,559 - Chang , et al. February 28, 1 | 1978-02-28 |
Post diffusion after temperature gradient zone melting
Grant 4,021,269 - Anthony , et al. May 3, 1 | 1977-05-03 |
Semiconductor device manufacture
Grant 4,006,040 - Cline , et al. February 1, 1 | 1977-02-01 |
Uniform migration of an annular shaped molten zone through a solid body
Grant 3,998,661 - Chang , et al. December 21, 1 | 1976-12-21 |
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