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name:-0.017528057098389
CHANG; Kuan-Lun Patent Filings

CHANG; Kuan-Lun

Patent Applications and Registrations

Patent applications and USPTO patent grants for CHANG; Kuan-Lun.The latest application filed is for "method of fabricating a differential doped solar cell".

Company Profile
0.10.8
  • CHANG; Kuan-Lun - Hsinchu County TW
  • Chang; Kuan-Lun - Hukou Township Hsinchu County TW
  • Chang; Kuan-Lun - Hsin-Chu TW
  • Chang; Kuan-Lun - Hsinchu TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method Of Fabricating A Differential Doped Solar Cell
App 20130288421 - CHANG; Chi-Hsiung ;   et al.
2013-10-31
Method of fabricating a differential doped solar cell
Grant 8,445,311 - Chang , et al. May 21, 2
2013-05-21
Method Of Fabricating A Differential Doped Solar Cell
App 20120164779 - CHANG; Chi-Hsiung ;   et al.
2012-06-28
Structure having a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology
Grant 7,372,102 - Chang , et al. May 13, 2
2008-05-13
High density MIM capacitor structure and fabrication process
Grant 7,317,221 - Chang , et al. January 8, 2
2008-01-08
Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology
Grant 7,250,344 - Chang , et al. July 31, 2
2007-07-31
Semiconductor layout structure for ESD protection circuits
Grant 7,238,969 - Wu , et al. July 3, 2
2007-07-03
Semiconductor layout structure for ESD protection circuits
App 20060278928 - Wu; Yi-Hsun ;   et al.
2006-12-14
Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology
App 20060063349 - Chang; Kuan-Lun ;   et al.
2006-03-23
Structure having a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology
App 20060063389 - Chang; Kuan-Lun ;   et al.
2006-03-23
Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology
Grant 7,015,086 - Chang , et al. March 21, 2
2006-03-21
Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology
App 20050176214 - Chang, Kuan-Lun ;   et al.
2005-08-11
High density MIM capacitor structure and fabrication process
App 20050121744 - Chang, Kuan-Lun ;   et al.
2005-06-09
Elimination of implant damage during manufacture of HBT
Grant 6,847,061 - Tsai , et al. January 25, 2
2005-01-25
Elimination of implant damage during manufacture of HBT
App 20040195587 - Tsai, Chun-Lin ;   et al.
2004-10-07
Method of fabricating a bipolar junction transistor using multiple selectively implanted collector regions
Grant 6,352,901 - Chang March 5, 2
2002-03-05
Forming different depth trenches simultaneously by microloading effect
Grant 5,814,547 - Chang September 29, 1
1998-09-29

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