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name:-0.031097888946533
name:-0.21720910072327
name:-0.027590036392212
CHANG; Hui-Cheng Patent Filings

CHANG; Hui-Cheng

Patent Applications and Registrations

Patent applications and USPTO patent grants for CHANG; Hui-Cheng.The latest application filed is for "semiconductor device".

Company Profile
7.24.26
  • CHANG; Hui-Cheng - Tainan City TW
  • Chang; Hui-Cheng - Tainan TW
  • Chang; Hui-Cheng - Hsinchu TW
  • Chang; Hui-Cheng - Hsin-Chu TW
  • CHANG; Hui-Cheng - Hsinchu City TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor Device
App 20220173104 - CHANG; Chia-Yuan ;   et al.
2022-06-02
Semiconductor device
Grant 11,257,819 - Chang , et al. February 22, 2
2022-02-22
Method of forming MOSFET structure
Grant 11,127,837 - Fu , et al. September 21, 2
2021-09-21
Semiconductor device with multiple threshold voltage and method of fabricating the same
Grant 11,056,486 - Wang , et al. July 6, 2
2021-07-06
Method for manufacturing semiconductor device
Grant 10,991,695 - Chang , et al. April 27, 2
2021-04-27
Semiconductor device and method for forming the same
Grant 10,879,061 - Chen , et al. December 29, 2
2020-12-29
Fin field effect transistors having conformal oxide layers and methods of forming same
Grant 10,756,199 - Chen , et al. A
2020-08-25
Semiconductor Device
App 20200243524 - CHANG; Chia-Yuan ;   et al.
2020-07-30
Semiconductor device and method of manufacturing the same
Grant 10,622,356 - Chang , et al.
2020-04-14
Method of Forming MOSFET Structure
App 20200058765 - Fu; Ching-Feng ;   et al.
2020-02-20
Method of forming MOSFET structure
Grant 10,461,170 - Fu , et al. Oc
2019-10-29
Fin Field Effect Transistors having Conformal Oxide Layers and Methods of Forming Same
App 20190245057 - Chen; Chia-Cheng ;   et al.
2019-08-08
Semiconductor Device With Multiple Threshold Voltage And Method Of Fabricating The Same
App 20190229118 - WANG; Li-Ting ;   et al.
2019-07-25
Semiconductor Device And Method For Forming The Same
App 20190148141 - CHEN; Chun-Heng ;   et al.
2019-05-16
Semiconductor device with multiple threshold voltage and method of fabricating the same
Grant 10,276,562 - Wang , et al.
2019-04-30
Gate structure
Grant 10,276,725 - Fu , et al.
2019-04-30
Fin field effect transistors having conformal oxide layers and methods of forming same
Grant 10,269,921 - Chen , et al.
2019-04-23
Method For Manufacturing Semiconductor Device
App 20190115348 - CHANG; Chia-Yuan ;   et al.
2019-04-18
Semiconductor device and method for forming the same
Grant 10,181,397 - Chen , et al. Ja
2019-01-15
Fin Field Effect Transistors having Conformal Oxide Layers and Methods of Forming Same
App 20180145143 - Chen; Chia-Cheng ;   et al.
2018-05-24
Method of making a silicide beneath a vertical structure
Grant 9,966,448 - Lin , et al. May 8, 2
2018-05-08
Semiconductor device having a fin shell covering a fin core
Grant 9,911,812 - Lin , et al. March 6, 2
2018-03-06
Method of modifying capping layer in semiconductor structure
Grant 9,837,504 - Chen , et al. December 5, 2
2017-12-05
Vertical structure having an etch stop over portion of the source
Grant 9,805,968 - Lin , et al. October 31, 2
2017-10-31
Semiconductor Device And Method Of Manufacturing The Same
App 20170207218 - CHANG; Chia-Yuan ;   et al.
2017-07-20
Gate Structure
App 20170162720 - Fu; Ching-Feng ;   et al.
2017-06-08
Vertical Structure and Method of Forming Semiconductor Device
App 20170154807 - Lin; Cheng-Tung ;   et al.
2017-06-01
Method Of Modifying Capping Layer In Semiconductor Structure
App 20170125536 - CHEN; Chun-Heng ;   et al.
2017-05-04
Semiconductor Device And Method For Forming The Same
App 20170092491 - CHEN; Chun-Heng ;   et al.
2017-03-30
Method of forming channel of gate structure
Grant 9,590,090 - Fu , et al. March 7, 2
2017-03-07
Vertical structure and method of forming semiconductor device
Grant 9,577,093 - Lin , et al. February 21, 2
2017-02-21
Fin field effect transistors having conformal oxide layers and methods of forming same
Grant 9,515,188 - Chen , et al. December 6, 2
2016-12-06
Method Of Forming Mosfet Structure
App 20160247896 - FU; CHING-FENG ;   et al.
2016-08-25
Fin Field Effect Transistors Having Conformal Oxide Layers and Methods of Forming Same
App 20160181428 - Chen; Chia-Cheng ;   et al.
2016-06-23
Method of forming MOSFET structure
Grant 9,343,412 - Fu , et al. May 17, 2
2016-05-17
Fin Structure And Method For Forming The Same
App 20160064493 - LIN; CHUN-HSIUNG ;   et al.
2016-03-03
Vertical Structure And Method Of Forming Semiconductor Device
App 20160027917 - LIN; CHENG-TUNG ;   et al.
2016-01-28
Fin structure and method for forming the same
Grant 9,214,513 - Lin , et al. December 15, 2
2015-12-15
Vertical Structure And Method Of Forming The Same
App 20150333152 - LIN; CHENG-TUNG ;   et al.
2015-11-19
Delta doping layer in MOSFET source/drain region
Grant 9,166,035 - Lin , et al. October 20, 2
2015-10-20
Vertical structure and method of forming semiconductor device
Grant 9,166,001 - Lin , et al. October 20, 2
2015-10-20
Semiconductor Devices With Core-shell Structures
App 20150263094 - DIAZ; CARLOS H. ;   et al.
2015-09-17
Fin Structure And Method For Forming The Same
App 20150228721 - LIN; CHUN-HSIUNG ;   et al.
2015-08-13
Method Of Forming Mosfet Structure
App 20150228483 - FU; CHING-FENG ;   et al.
2015-08-13
Vertical Structure And Method Of Forming Semiconductor Device
App 20150228718 - LIN; CHENG-TUNG ;   et al.
2015-08-13
Semiconductor Device With Multiple Threshold Voltage And Method Of Fabricating The Same
App 20150194423 - WANG; LI-TING ;   et al.
2015-07-09
Method Of Forming Channel Of Gate Structure
App 20150194497 - FU; CHING-FENG ;   et al.
2015-07-09
Delta Doping Layer In Mosfet Source/drain Region
App 20150069467 - LIN; HUNG-TA ;   et al.
2015-03-12
Systems and Methods for Reducing Contact Resistivity of Semiconductor Devices
App 20150021757 - LIN; CHENG-TUNG ;   et al.
2015-01-22
Systems and methods for reducing contact resistivity of semiconductor devices
Grant 8,927,418 - Lin , et al. January 6, 2
2015-01-06

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