Chang; Hsun

Patent Applications and Registrations

Patent applications and USPTO patent grants for Chang; Hsun.The latest application filed is for "slide on zipper assembly".

Company Profile

0.6.8

Chang; Hsun - Flushing NY
Chang; Hsun - Hsin-Chu N/A TW
Chang; Hsun - Hsinchu TW
Chang; Hsun - Hsinchu City TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Slide On Zipper Assembly App 20140115836 - Chang; Hsun	2014-05-01
Source/drain carbon implant and RTA anneal, pre-SiGe deposition Grant 8,404,546 - Woon , et al. March 26, 2	2013-03-26
Method of enhancing dopant activation without suffering additional dopant diffusion Grant 8,273,633 - Kuo , et al. September 25, 2	2012-09-25
Source/Drain Carbon Implant and RTA Anneal, Pre-SiGe Deposition App 20110027955 - Woon; Wei-Yen ; et al.	2011-02-03
Source/drain carbon implant and RTA anneal, pre-SiGe deposition Grant 7,838,887 - Woon , et al. November 23, 2	2010-11-23
Semiconductor device having ultra-shallow and highly activated source/drain extensions Grant 7,741,699 - Ku , et al. June 22, 2	2010-06-22
Source/Drain Carbon Implant and RTA Anneal, Pre-SiGe Deposition App 20090273034 - Woon; Wei-Yen ; et al.	2009-11-05
Advanced activation approach for MOS devices Grant 7,494,857 - Chen , et al. February 24, 2	2009-02-24
Method Of Enhancing Dopant Activation Without Suffering Additional Dopant Diffusion App 20080242039 - Ku; Keh-Chiang ; et al.	2008-10-02
Advanced activation approach for MOS devices App 20080160709 - Chen; Chien-Hao ; et al.	2008-07-03
Junction leakage reduction in SiGe process by tilt implantation App 20070298557 - Nieh; Chun-Feng ; et al.	2007-12-27
Ultra-shallow and highly activated source/drain extension formation using phosphorus App 20070284615 - Ku; Keh-Chiang ; et al.	2007-12-13

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