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Nonvolatile memories with floating gate spacers, and methods of fabrication Grant 6,570,215 - Tuan , et al. May 27, 2 | 2003-05-27 |
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Nonvolatile memories with floating gate spacers, and methods of fabrication App 20020190307 - Tuan, Hsing T. ;   et al. | 2002-12-19 |
Multiple byte channel hot electron programming using ramped gate and source bias voltage Grant 6,275,415 - Haddad , et al. August 14, 2 | 2001-08-14 |
Array architecture and process flow of nonvolatile memory devices for mass storage applications Grant 6,258,668 - Lee , et al. July 10, 2 | 2001-07-10 |
Biasing method and structure for reducing band-to-band and/or avalanche currents during the erase of flash memory devices Grant 6,236,596 - Sobek , et al. May 22, 2 | 2001-05-22 |
Flash memory cell & array with improved pre-program and erase characteristics Grant 6,188,604 - Liu , et al. February 13, 2 | 2001-02-13 |
Erase condition for flash memory Grant 6,134,150 - Hsu , et al. October 17, 2 | 2000-10-17 |
Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices Grant 6,025,240 - Chan , et al. February 15, 2 | 2000-02-15 |
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Methods and arrangements for introducing nitrogen into a tunnel oxide in a non-volatile semiconductor memory device Grant 5,972,751 - Ramsbey , et al. October 26, 1 | 1999-10-26 |
Method and system for source only reoxidation after junction implant for flash memory devices Grant 5,940,709 - Chan August 17, 1 | 1999-08-17 |
Non-uniform threshold voltage adjustment in flash eproms through gate work function alteration Grant 5,888,867 - Wang , et al. March 30, 1 | 1999-03-30 |
Method for programming flash electrically erasable programmable read-only memory Grant 5,875,130 - Haddad , et al. February 23, 1 | 1999-02-23 |
Memory cell programming with controlled current injection Grant 5,856,946 - Chan , et al. January 5, 1 | 1999-01-05 |