Chan; Tsz W.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Chan; Tsz W..The latest application filed is for "semiconductor devices comprising threshold switching materials".

Company Profile

17.15.17

Chan; Tsz W. - Boise ID

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor Devices Comprising Threshold Switching Materials App 20210151676 - Chan; Tsz W. ; et al.	2021-05-20
Methods of forming memory cells and memory devices Grant 10,923,657 - Chan , et al. February 16, 2	2021-02-16
Phase change memory stack with treated sidewalls Grant 10,720,574 - Chan , et al.	2020-07-21
Variable resistance memory stack with treated sidewalls Grant 10,692,572 - Hu , et al.	2020-06-23
Phase change memory stack with treated sidewalls Grant 10,546,895 - Hu , et al. Ja	2020-01-28
Variable Resistance Memory Stack With Treated Sidewalls App 20190362785 - Hu; Yongjun Jeff ; et al.	2019-11-28
Phase Change Memory Stack With Treated Sidewalls App 20190355902 - Chan; Tsz W. ; et al.	2019-11-21
Methods Of Forming Memory Cells And Memory Devices App 20190348603 - Chan; Tsz W. ; et al.	2019-11-14
Methods of forming memory cells and semiconductor devices Grant 10,418,554 - Chan , et al. Sept	2019-09-17
Phase change memory stack with treated sidewalls Grant 10,381,072 - Hu , et al. A	2019-08-13
Variable resistance memory stack with treated sidewalls Grant 10,325,653 - Hu , et al.	2019-06-18
Phase Change Memory Stack With Treated Sidewalls App 20190140023 - Hu; Yongjun Jeff ; et al.	2019-05-09
Phase Change Memory Stack With Treated Sidewalls App 20190088867 - Chan; Tsz W. ; et al.	2019-03-21
Phase change memory stack with treated sidewalls Grant 10,224,479 - Chan , et al.	2019-03-05
Methods Of Forming Memory Cells And Semiconductor Devices App 20190067573 - Chan; Tsz W. ; et al.	2019-02-28
Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same Grant 10,193,064 - Chan , et al. Ja	2019-01-29
Phase change memory stack with treated sidewalls Grant 10,177,198 - Hu , et al. J	2019-01-08
Phase change memory stack with treated sidewalls Grant 10,079,340 - Chan , et al. September 18, 2	2018-09-18
Phase Change Memory Stack With Treated Sidewalls App 20180166629 - Chan; Tsz W. ; et al.	2018-06-14
Variable Resistance Memory Stack With Treated Sidewalls App 20180144795 - Hu; Yongjun Jeff ; et al.	2018-05-24
Phase Change Memory Stack With Treated Sidewalls App 20170358629 - Hu; Yongjun Jeff ; et al.	2017-12-14
Memory Cells Including Dielectric Materials, Memory Devices Including The Memory Cells, And Methods Of Forming Same App 20170309818 - Chan; Tsz W. ; et al.	2017-10-26
Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same Grant 9,716,225 - Chan , et al. July 25, 2	2017-07-25
Phase change memory stack with treated sidewalls Grant 9,673,256 - Hu , et al. June 6, 2	2017-06-06
Phase Change Memory Stack With Treated Sidewalls App 20160218282 - Chan; Tsz W. ; et al.	2016-07-28
Phase Change Memory Stack With Treated Sidewalls App 20160190209 - Hu; Yongjun Jeff ; et al.	2016-06-30
Phase change memory stack with treated sidewalls Grant 9,306,159 - Chan , et al. April 5, 2	2016-04-05
Phase change memory stack with treated sidewalls Grant 9,281,471 - Hu , et al. March 8, 2	2016-03-08
Memory Cells Including Dielectric Materials, Memory Devices Including The Memory Cells, And Methods Of Forming Same App 20160064666 - Chan; Tsz W. ; et al.	2016-03-03
Phase Change Memory Stack With Treated Sidewalls App 20150318467 - Hu; Yongjun Jeff ; et al.	2015-11-05
Phase Change Memory Stack With Treated Sidewalls App 20150318468 - Chan; Tsz W. ; et al.	2015-11-05
Phase Change Memory Stack With Treated Sidewalls App 20150318038 - Hu; Yongjun Jeff ; et al.	2015-11-05

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