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name:-0.03765606880188
name:-0.021688938140869
name:-0.0016062259674072
CHAE; Byung Gyu Patent Filings

CHAE; Byung Gyu

Patent Applications and Registrations

Patent applications and USPTO patent grants for CHAE; Byung Gyu.The latest application filed is for "system and method for digital hologram synthesis and process using deep learning".

Company Profile
1.20.34
  • CHAE; Byung Gyu - Daejeon KR
  • Chae; Byung-Gyu - Daejeon-city KR
  • Chae; Byung Gyu - Daejon KR
  • Chae; Byung Gyu - Deajeon KR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
System And Method For Digital Hologram Synthesis And Process Using Deep Learning
App 20210264628 - YOON; Min Sung ;   et al.
2021-08-26
Digital Hologram Display Apparatus And Displaying Method Of Digital Holographic Image
App 20200409307 - CHAE; Byung Gyu
2020-12-31
Imaging system and image reconstruction method using the same
Grant 10,650,555 - Chae , et al.
2020-05-12
Imaging System And Image Reconstruction Method Using The Same
App 20180350111 - CHAE; Byung Gyu ;   et al.
2018-12-06
Digital Holographic Display Method And Apparatus
App 20150234350 - PARK; Min Sik ;   et al.
2015-08-20
Holographic display apparatus capable of steering view window
Grant 8,995,037 - Chae , et al. March 31, 2
2015-03-31
Wide-viewing Angle Holographic Display Apparatus
App 20150085331 - CHAE; Byung Gyu
2015-03-26
Holographic Display Apparatus Capable Of Steering View Window
App 20130208328 - CHAE; Byung Gyu ;   et al.
2013-08-15
Programmable MIT sensor using the abrupt MIT device, and alarm apparatus and secondary battery anti-explosion circuit including the MIT sensor
Grant 8,305,221 - Kim , et al. November 6, 2
2012-11-06
Field effect transistor having graphene channel layer
Grant 8,247,806 - Chae , et al. August 21, 2
2012-08-21
Holographic Displays With High Resolution
App 20120019883 - CHAE; Byung Gyu ;   et al.
2012-01-26
Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuit
App 20110304403 - Lee; Yong-wook ;   et al.
2011-12-15
Oscillation circuit including MIT device and method of adjusting oscillation frequency of the oscillation circuit
Grant 8,031,022 - Lee , et al. October 4, 2
2011-10-04
Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuit
Grant 8,031,021 - Lee , et al. October 4, 2
2011-10-04
Lithium secondary battery including discharge unit
Grant 8,017,268 - Kim , et al. September 13, 2
2011-09-13
Abrupt metal-insulator transition device with parallel MIT material layers
Grant 7,989,792 - Kim , et al. August 2, 2
2011-08-02
Temperature sensor using abrupt metal-insulator transition (MIT) and alarm comprising the temperature sensor
Grant 7,944,360 - Kim , et al. May 17, 2
2011-05-17
Power device package having enhanced heat dissipation
Grant 7,929,308 - Choi , et al. April 19, 2
2011-04-19
Low-voltage noise preventing circuit using abrupt metal-insulator transition device
Grant 7,911,756 - Kim , et al. March 22, 2
2011-03-22
Electron emission device using abrupt metal-insulator transition and display including the same
Grant 7,911,125 - Kim , et al. March 22, 2
2011-03-22
Field Effect Transistor Having Graphene Channel Layer
App 20100258787 - CHAE; Byung-Gyu ;   et al.
2010-10-14
Memory device using abrupt metal-insulator transition and method of operating the same
Grant 7,791,924 - Kim , et al. September 7, 2
2010-09-07
2-terminal Semiconductor Device Using Abrupt Metal-insulator Transition Semiconductor Material
App 20100193824 - KIM; Hyun Tak ;   et al.
2010-08-05
Devices using abrupt metal-insulator transition layer and method of fabricating the device
Grant 7,767,501 - Youn , et al. August 3, 2
2010-08-03
Power Device Package Having Enhanced Heat Dissipation
App 20100157542 - CHOI; Sang Kuk ;   et al.
2010-06-24
Circuit For Protecting Electrical And/or Electronic System By Using Abrupt Metal-insulator Transition Device And Electrical And/or Electronic System Comprising The Circuit
App 20100134936 - Kim; Hyun-Tak ;   et al.
2010-06-03
2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material
Grant 7,728,327 - Kim , et al. June 1, 2
2010-06-01
Oscillation Circuit Including Mit Device And Method Of Adjusting Oscillation Frequency Of The Oscillation Circuit
App 20100085126 - Lee; Yong-Wook ;   et al.
2010-04-08
Photo-induced Metal-insulator-transition Material Complex For Solar Cell, Solar Cell And Solar Cell Module Comprising The Same
App 20100071751 - KIM; Hyun Tak ;   et al.
2010-03-25
Oscillation Circuit Based On Metal-insulator Transition Device And Method Of Driving The Oscillation Circuit
App 20100060369 - Lee; Yong-Wook ;   et al.
2010-03-11
Programmable Mit Sensor Using The Abrupt Mit Device, And Alarm Apparatus And Secondary Battery Anti-explosion Circuit Including The Mit Sensor
App 20090315724 - Kim; Hyun-Tak ;   et al.
2009-12-24
Lithium Secondary Battery Including Discharge Unit
App 20090286140 - Kim; Hyun-Tak ;   et al.
2009-11-19
Devices Using Abrupt Metal-insulator Transition Layer And Method Of Fabricating The Device
App 20090230428 - Youn; Doo-Hyeb ;   et al.
2009-09-17
Method Of Forming Vanadium Trioxide Thin Film Showing Abrupt Metal-insulator Transition
App 20090208639 - Yun; Sun-Jin ;   et al.
2009-08-20
Memory Device Using Abrupt Metal-insulator Transition And Method Of Operating The Same
App 20090114896 - Kim; Hyun-Tak ;   et al.
2009-05-07
Insulator Undergoing Abrupt Metal-insulator Transition, Method Of Manufacturing The Insulator, And Device Using The Insulator
App 20090091003 - Lim; Jung Wook ;   et al.
2009-04-09
Abrupt Metal-insulator Transition Device With Parallel Conducting Layers
App 20090057820 - Kim; Hyun-Tak ;   et al.
2009-03-05
Abrupt metal-insulator transition device, circuit for removing high-voltage noise using the abrupt metal-insulator transition device, and electrical and/or electronic system comprising the circuit
Grant 7,489,492 - Kim , et al. February 10, 2
2009-02-10
Method of Manufacturing Vanadium Oxide Thin Film
App 20090011145 - Yun; Sun-Jin ;   et al.
2009-01-08
Electron Emission Device Using Abrupt Metal-Insulator Transition and Display Including the Same
App 20080315775 - Kim; Hyun Tak ;   et al.
2008-12-25
Temperature Sensor Using Abrupt Metal-Insulator Transition (Mit) and Alarm Comprising the Temperature Sensor
App 20080297358 - Kim; Hyun-Tak ;   et al.
2008-12-04
Abrupt Metal-Insulator Transition Wafer, and Heat Treatment Apparatus and Method For the Wafer
App 20080277763 - Kim; Hyun Tak ;   et al.
2008-11-13
Low-Voltage Noise Preventing Circuit Using Abrupt Metal-Insulator Transition Device
App 20080197916 - Kim; Hyun-Tak ;   et al.
2008-08-21
Metal-insulator transition switching transistor and method for manufacturing the same
Grant 7,408,217 - Yoon , et al. August 5, 2
2008-08-05
Abrupt Metal-insulator Transition Device, Circuit For Removing High-voltage Noise Using The Abrupt Metal-insulator Transition Device, And Electrical And/or Electronic System Comprising The Circuit
App 20080142900 - KIM; Hyun Tak ;   et al.
2008-06-19
Metal-insulator transition switching transistor and method for manufacturing the same
App 20070069193 - Yoon; Doo Hyeb ;   et al.
2007-03-29
Field effect transistor using insulator-semiconductor transition material layer as channel material and method of manufacturing the same
App 20060231872 - Kim; Hyun Tak ;   et al.
2006-10-19
2-Terminal semiconductor device using abrupt metal-insulator transition semiconductor material
App 20060011942 - Kim; Hyun Tak ;   et al.
2006-01-19
Current-jump-control circuit including abrupt metal-insulator phase transition device
Grant 6,987,290 - Kim , et al. January 17, 2
2006-01-17
Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistor
Grant 6,933,553 - Kim , et al. August 23, 2
2005-08-23
Current-jump-control circuit including abrupt metal-insulator phase transition device
App 20050098836 - Kim, Hyun Tak ;   et al.
2005-05-12
Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistor
App 20040245582 - Kim, Hyun Tak ;   et al.
2004-12-09

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