CHA; Seon-Yong

Patent Applications and Registrations

Patent applications and USPTO patent grants for CHA; Seon-Yong.The latest application filed is for "vertical memory device".

Company Profile

2.9.16

CHA; Seon-Yong - Chungcheongbuk-do KR
CHA; Seon Yong - Gyeonggi-do KR
Cha; Seon Yong - Cheongju-si KR
Cha; Seon Yong - Kyoungki-do KR
Cha, Seon Yong - Suwon-shi KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Vertical Memory Device App 20220262425 - KIM; Seung-Hwan ; et al.	2022-08-18
Memory Cell And Memory Device App 20220208766 - KIM; Seung Hwan ; et al.	2022-06-30
Vertical memory device Grant 11,355,177 - Kim , et al. June 7, 2	2022-06-07
Vertical Memory Device App 20210012828 - KIM; Seung-Hwan ; et al.	2021-01-14
Vertical Memory Device App 20200279601 - KIM; Seung-Hwan ; et al.	2020-09-03
Vertical transistor and method for forming the same Grant 8,198,161 - Cha June 12, 2	2012-06-12
Vertical Transistor And Method For Forming The Same App 20120021576 - CHA; Seon Yong	2012-01-26
Vertical transistor and method for forming the same Grant 8,053,817 - Cha November 8, 2	2011-11-08
Method for forming a semiconductor device having recess channel Grant 7,799,641 - Lee , et al. September 21, 2	2010-09-21
Semiconductor Device And Method For Manufacturing The Same App 20100203696 - CHA; Seon Yong	2010-08-12
Vertical Transistor And Method For Forming The Same App 20090114978 - CHA; Seon Yong	2009-05-07
Semiconductor Device And Method For Manufacturing The Same App 20080290390 - Cha; Seon Yong	2008-11-27
Semiconductor Device And Method For Manufacturing The Same App 20080277741 - CHA; Seon Yong	2008-11-13
Method For Forming A Semiconductor Device Having Recess Channel App 20070155101 - Lee; Jin Yul ; et al.	2007-07-05
Magnetoresistive random access memory, and manufacturing method thereof Grant 7,095,069 - Cha August 22, 2	2006-08-22
Method for manufacturing magnetic random access memory Grant 7,019,370 - Cha March 28, 2	2006-03-28
Method for manufacturing magnetic random access memory App 20050139880 - Cha, Seon Yong	2005-06-30
NAND-type magnetoresistive RAM Grant 6,885,578 - Cha April 26, 2	2005-04-26
Magnetic random access memory having transistor of vertical structure with writing line formed on an upper portion of the magnetic tunnel junction cell Grant 6,855,564 - Cha February 15, 2	2005-02-15
Magnetoresistive random access memory, and manufacturing method thereof App 20040175887 - Cha, Seon Yong	2004-09-09
NAND-type magnetoresistive RAM App 20040113187 - Cha, Seon Yong	2004-06-17
Magnetic random access memory having transistor of vertical structure with writing line formed on an upper portion of the magnetic tunnel junction cell App 20040061156 - Cha, Seon Yong	2004-04-01
Magnetic random access memory having a transistor of vertical structure with writing line formed on an upper portion of the magnetic tunnel junction cell Grant 6,649,953 - Cha November 18, 2	2003-11-18
Magnetic random access memory having a transistor of vertical structure and the method thereof App 20020140016 - Cha, Seon Yong	2002-10-03
Method for fabricating a semiconductor device App 20020142555 - Cha, Seon Yong	2002-10-03

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