| Patent | Date |
|---|
Fin Doping And Integrated Circuit Structures Resulting Therefrom
App 20220310601 - LILAK; Aaron D. ; et al. | 2022-09-29 |
Buried etch-stop layer to help control transistor source/drain depth
Grant 11,430,868 - Mehandru , et al. August 30, 2 | 2022-08-30 |
Isolation Schemes For Gate-all-around Transistor Devices
App 20220246759 - MEHANDRU; Rishabh ; et al. | 2022-08-04 |
Vertically stacked finFETs and shared gate patterning
Grant 11,404,319 - Lilak , et al. August 2, 2 | 2022-08-02 |
Pedestal fin structure for stacked transistor integration
Grant 11,374,004 - Lilak , et al. June 28, 2 | 2022-06-28 |
Neighboring Gate-all-around Integrated Circuit Structures Having Conductive Contact Stressor Between Epitaxial Source Or Drain Regions
App 20220199771 - CHOUKSEY; Siddharth ; et al. | 2022-06-23 |
Isolation schemes for gate-all-around transistor devices
Grant 11,335,807 - Mehandru , et al. May 17, 2 | 2022-05-17 |
Device Isolation
App 20220140143 - Mehandru; Rishabh ; et al. | 2022-05-05 |
Extension Of Nanocomb Transistor Arrangements To Implement Gate All Around
App 20220093474 - Mishra; Varun ; et al. | 2022-03-24 |
Forksheet Transistors With Dielectric Or Conductive Spine
App 20220093647 - SUNG; Seung Hoon ; et al. | 2022-03-24 |
Gate-all-around integrated circuit structures having self-aligned source or drain undercut for varied widths
Grant 11,276,691 - Guha , et al. March 15, 2 | 2022-03-15 |
Device isolation
Grant 11,264,500 - Mehandru , et al. March 1, 2 | 2022-03-01 |
Cmos Finfet Device Having Strained Sige Fins And A Strained Si Cladding Layer On The Nmos Channel
App 20220059656 - Cea; Stephen M. ; et al. | 2022-02-24 |
Method of fabricating a semiconductor device with strained SiGe fins and a Si cladding layer
Grant 11,195,919 - Cea , et al. December 7, 2 | 2021-12-07 |
Metallization Structures Under A Semiconductor Device Layer
App 20210343710 - Lilak; Aaron D. ; et al. | 2021-11-04 |
Semiconductor layer between source/drain regions and gate spacers
Grant 11,152,461 - Mehandru , et al. October 19, 2 | 2021-10-19 |
Metallization structures under a semiconductor device layer
Grant 11,107,811 - Lilak , et al. August 31, 2 | 2021-08-31 |
Semiconductor nanowire device having cavity spacer and method of fabricating cavity spacer for semiconductor nanowire device
Grant 11,094,831 - Mehandru , et al. August 17, 2 | 2021-08-17 |
Through Gate Fin Isolation
App 20210233908 - BOHR; Mark T. ; et al. | 2021-07-29 |
Silicon And Silicon Germanium Nanowire Structures
App 20210226006 - Kuhn; Kelin J. ; et al. | 2021-07-22 |
Method, device and system to provide capacitance for a dynamic random access memory cell
Grant 11,049,861 - Lilak , et al. June 29, 2 | 2021-06-29 |
Through gate fin isolation
Grant 11,037,923 - Bohr , et al. June 15, 2 | 2021-06-15 |
Vertical interconnect methods for stacked device architectures using direct self assembly with high operational parallelization and improved scalability
Grant 11,011,537 - Lilak , et al. May 18, 2 | 2021-05-18 |
Vertically stacked devices with self-aligned regions formed by direct self assembly (DSA) processing
Grant 10,991,696 - Lilak , et al. April 27, 2 | 2021-04-27 |
Silicon and silicon germanium nanowire structures
Grant 10,991,799 - Kuhn , et al. April 27, 2 | 2021-04-27 |
Device, Method And System To Provide A Stressed Channel Of A Transistor
App 20210083117 - Mehandru; Rishabh ; et al. | 2021-03-18 |
Methods and apparatus for gettering impurities in semiconductors
Grant 10,937,665 - Lilak , et al. March 2, 2 | 2021-03-02 |
Vertical Integration Scheme And Circuit Elements Architecture For Area Scaling Of Semiconductor Devices
App 20210043755 - MEHANDRU; Rishabh ; et al. | 2021-02-11 |
Nanowire Structures Having Wrap-around Contacts
App 20210036137 - CEA; Stephen M. ; et al. | 2021-02-04 |
Backside fin recess control with multi-HSI option
Grant 10,910,405 - Lilak , et al. February 2, 2 | 2021-02-02 |
Techniques for forming dual-strain fins for co-integrated n-MOS and p-MOS devices
Grant 10,886,272 - Cea , et al. January 5, 2 | 2021-01-05 |
High Mobility Strained Channels For Fin-based Nmos Transistors
App 20200381549 - CEA; STEPHEN M. ; et al. | 2020-12-03 |
High mobility strained channels for fin-based NMOS transistors
Grant 10,854,752 - Cea , et al. December 1, 2 | 2020-12-01 |
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices
Grant 10,847,635 - Mehandru , et al. November 24, 2 | 2020-11-24 |
Nanowire structures having wrap-around contacts
Grant 10,840,366 - Cea , et al. November 17, 2 | 2020-11-17 |
Stacked channel structures for MOSFETs
Grant 10,790,281 - Mehandru , et al. September 29, 2 | 2020-09-29 |
Vertically Stacked Finfets & Shared Gate Patterning
App 20200235013 - Lilak; Aaron ; et al. | 2020-07-23 |
Silicon And Silicon Germanium Nanowire Structures
App 20200227520 - KUHN; Kelin J. ; et al. | 2020-07-16 |
Self-aligned Gate Endcap (sage) Architectures With Gate-all-around Devices Above Insulator Substrates
App 20200219990 - GUHA; Biswajeet ; et al. | 2020-07-09 |
Backside Fin Recess Control With Multi-hsi Option
App 20200176482 - LILAK; Aaron D. ; et al. | 2020-06-04 |
Metallization Structures Under A Semiconductor Device Layer
App 20200161298 - Lilak; Aaron D. ; et al. | 2020-05-21 |
Nanowire Structures Having Non-discrete Source And Drain Regions
App 20200152797 - CEA; Stephen M. ; et al. | 2020-05-14 |
Deep EPI enabled by backside reveal for stress enhancement and contact
Grant 10,636,907 - Lilak , et al. | 2020-04-28 |
Silicon and silicon germanium nanowire structures
Grant 10,636,871 - Kuhn , et al. | 2020-04-28 |
Strained Tunable Nanowire Structures And Process
App 20200105755 - Cea; Stephen M. ; et al. | 2020-04-02 |
Backside fin recess control with multi-hsi option
Grant 10,600,810 - Lilak , et al. | 2020-03-24 |
Gate-all-around Integrated Circuit Structures Having Self-aligned Source Or Drain Undercut For Varied Widths
App 20200091145 - GUHA; Biswajeet ; et al. | 2020-03-19 |
Nanowire structures having non-discrete source and drain regions
Grant 10,580,899 - Cea , et al. | 2020-03-03 |
Backside isolation for integrated circuit
Grant 10,573,715 - Lilak , et al. Feb | 2020-02-25 |
Device Isolation
App 20200052117 - Mehandru; Rishabh ; et al. | 2020-02-13 |
Nanowire Structures Having Wrap-around Contacts
App 20200035818A1 - | 2020-01-30 |
Semiconductor Nanowire Device Having Cavity Spacer And Method Of Fabricating Cavity Spacer For Semiconductor Nanowire Device
App 20200013905 - MEHANDRU; Rishabh ; et al. | 2020-01-09 |
Long channel MOS transistors for low leakage applications on a short channel CMOS chip
Grant 10,529,827 - Mehandru , et al. J | 2020-01-07 |
Buried Etch-stop Layer To Help Control Transistor Source/drain Depth
App 20200006488 - MEHANDRU; RISHABH ; et al. | 2020-01-02 |
Increased Transistor Source/drain Contact Area Using Sacrificial Source/drain Layer
App 20200006525 - CRUM; DAX M. ; et al. | 2020-01-02 |
Pedestal Fin Structure For Stacked Transistor Integration
App 20200006340 - LILAK; AARON D. ; et al. | 2020-01-02 |
Isolation Schemes For Gate-all-around Transistor Devices
App 20200006559 - MEHANDRU; RISHABH ; et al. | 2020-01-02 |
Methods for doping a sub-fin region of a semiconductor structure by backside reveal and associated devices
Grant 10,497,781 - Lilak , et al. De | 2019-12-03 |
Semiconductor Layer Between Source/drain Regions And Gate Spacers
App 20190355811 - Mehandru; Rishabh ; et al. | 2019-11-21 |
Nanowire structures having wrap-around contacts
Grant 10,483,385 - Cea , et al. Nov | 2019-11-19 |
Direct Self Assembly (dsa) Processing Of Vertically Stacked Devices With Self-aligned Regions
App 20190341384 - Lilak; Aaron D. ; et al. | 2019-11-07 |
Isolation structures for an integrated circuit element and method of making same
Grant 10,468,489 - Lilak , et al. No | 2019-11-05 |
Techniques For Forming Dual-strain Fins For Co-integrated N-mos And P-mos Devices
App 20190326290 - CEA; STEPHEN M. ; et al. | 2019-10-24 |
Semiconductor nanowire device having cavity spacer and method of fabricating cavity spacer for semiconductor nanowire device
Grant 10,453,967 - Mehandru , et al. Oc | 2019-10-22 |
Hybrid trigate and nanowire CMOS device architecture
Grant 10,411,090 - Weber , et al. Sept | 2019-09-10 |
Prevention of subchannel leakage current in a semiconductor device with a fin structure
Grant 10,403,752 - Jambunathan , et al. Sep | 2019-09-03 |
Vertical Integration Scheme And Circuit Elements Architecture For Area Scaling Of Semiconductor Devices
App 20190252525 - MEHANDRU; Rishabh ; et al. | 2019-08-15 |
Vertical Interconnect Methods For Stacked Device Architectures Using Direct Self Assembly With High Operational Parallelization
App 20190221577 - LILAK; Aaron D. ; et al. | 2019-07-18 |
Methods And Apparatus For Gettering Impurities In Semiconductors
App 20190189464 - Lilak; Aaron D. ; et al. | 2019-06-20 |
Finfet Transistor With Channel Stress Induced Via Stressor Material Inserted Into Fin Plug Region Enabled By Backside Reveal
App 20190172950 - LILAK; Aaron D. ; et al. | 2019-06-06 |
Two-dimensional condensation for uniaxially strained semiconductor fins
Grant 10,304,929 - Kavalieros , et al. | 2019-05-28 |
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices
Grant 10,304,946 - Mehandru , et al. | 2019-05-28 |
High Mobility Strained Channels For Fin-based Nmos Transistors
App 20190115466 - CEA; STEPHEN M. ; et al. | 2019-04-18 |
CMOS FinFET Device Having Strained SiGe Fins and a Strained Si Cladding Layer on the NMOS Channel
App 20190035893 - Cea; Stephen M. ; et al. | 2019-01-31 |
Backside Fin Recess Control With Multi-hsi Option
App 20190027503 - LILAK; Aaron D. ; et al. | 2019-01-24 |
High mobility strained channels for fin-based NMOS transistors
Grant 10,153,372 - Cea , et al. Dec | 2018-12-11 |
Backside Isolation For Integrated Circuit
App 20180331183 - LILAK; AARON D. ; et al. | 2018-11-15 |
Stacked Channel Structures For Mosfets
App 20180323195 - Mehandru; Rishabh ; et al. | 2018-11-08 |
CMOS FinFET device having strained SiGe fins and a strained Si cladding layer on the NMOS channel
Grant 10,109,711 - Cea , et al. October 23, 2 | 2018-10-23 |
CMOS nanowire structure
Grant 10,074,573 - Kim , et al. September 11, 2 | 2018-09-11 |
Methods For Doping A Sub-fin Region Of A Semiconductor Structure By Backside Reveal And Associated Devices
App 20180248005 - LILAK; Aaron D. ; et al. | 2018-08-30 |
Isolation Structures For An Integrated Circuit Element And Method Of Making Same
App 20180226478 - LILAK; Aaron D. ; et al. | 2018-08-09 |
Long Channel Mos Transistors For Low Leakage Applications On A Short Channel Cmos Chip
App 20180226492 - MEHANDRU; Rishabh ; et al. | 2018-08-09 |
Method, Device And System To Provide Capacitance For A Dynamic Random Access Memory Cell
App 20180219012 - LILAK; Aaron ; et al. | 2018-08-02 |
Deep Epi Enabled By Backside Reveal For Stress Enhancement & Contact
App 20180212057 - LILAK; Aaron D. ; et al. | 2018-07-26 |
Hybrid Trigate And Nanowire Cmos Device Architecture
App 20180212023 - WEBER; Cory E. ; et al. | 2018-07-26 |
Semiconductor Nanowire Device Having Cavity Spacer And Method Of Fabricating Cavity Spacer For Semiconductor Nanowire Device
App 20180204955 - MEHANDRU; Rishabh ; et al. | 2018-07-19 |
Vertical Integration Scheme And Circuit Elements Architecture For Area Scaling Of Semiconductor Devices
App 20180204932 - MEHANDRU; Rishabh ; et al. | 2018-07-19 |
Semiconductor device with isolated body portion
Grant 10,026,829 - Cappellani , et al. July 17, 2 | 2018-07-17 |
CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the same
Grant 9,935,107 - Cea , et al. April 3, 2 | 2018-04-03 |
Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs
Grant 9,911,835 - Kotlyar , et al. March 6, 2 | 2018-03-06 |
Uniaxially strained nanowire structure
Grant 9,905,650 - Cea , et al. February 27, 2 | 2018-02-27 |
GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation
Grant 9,905,651 - Pillarisetty , et al. February 27, 2 | 2018-02-27 |
High mobility strained channels for fin-based transistors
Grant 9,893,149 - Cea , et al. February 13, 2 | 2018-02-13 |
Prevention Of Subchannel Leakage Current
App 20170330966 - JAMBUNATHAN; KARTHIK ; et al. | 2017-11-16 |
Two-dimensional Condensation For Uniaxially Strained Semiconductor Fins
App 20170317172 - KAVALIEROS; Jack T. ; et al. | 2017-11-02 |
Two-dimensional condensation for uniaxially strained semiconductor fins
Grant 9,711,598 - Kavalieros , et al. July 18, 2 | 2017-07-18 |
Non-planar device having uniaxially strained semiconductor body and method of making same
Grant 9,680,013 - Cea , et al. June 13, 2 | 2017-06-13 |
Semiconductor Device With Isolated Body Portion
App 20170162676 - CAPPELLANI; Annalisa ; et al. | 2017-06-08 |
Conversion of strain-inducing buffer to electrical insulator
Grant 9,673,302 - Cappellani , et al. June 6, 2 | 2017-06-06 |
Nanowire Structures Having Non-discrete Source And Drain Regions
App 20170141239 - CEA; Stephen M. ; et al. | 2017-05-18 |
Silicon And Silicon Germanium Nanowire Structures
App 20170133462 - KUHN; Kelin J. ; et al. | 2017-05-11 |
Cmos Nanowire Structure
App 20170133277 - KIM; Seiyon ; et al. | 2017-05-11 |
Tunneling Field Effect Transistors (tfets) For Cmos Architectures And Approaches To Fabricating N-type And P-type Tfets
App 20170133493 - Kotlyar; Roza ; et al. | 2017-05-11 |
Ge And Iii-v Channel Semiconductor Devices Having Maximized Compliance And Free Surface Relaxation
App 20170125524 - PILLARISETTY; RAVI ; et al. | 2017-05-04 |
Semiconductor device with isolated body portion
Grant 9,608,059 - Cappellani , et al. March 28, 2 | 2017-03-28 |
Silicon and silicon germanium nanowire structures
Grant 9,595,581 - Kuhn , et al. March 14, 2 | 2017-03-14 |
CMOS nanowire structure
Grant 9,583,491 - Kim , et al. February 28, 2 | 2017-02-28 |
Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs
Grant 9,583,602 - Kotlyar , et al. February 28, 2 | 2017-02-28 |
Uniaxially Strained Nanowire Structure
App 20170047405 - Cea; Stephen M. ; et al. | 2017-02-16 |
Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation
Grant 9,570,614 - Pillarisetty , et al. February 14, 2 | 2017-02-14 |
Conversion Of Strain-inducing Buffer To Electrical Insulator
App 20170040438 - CAPPELLANI; ANNALISA ; et al. | 2017-02-09 |
Nanowire structures having non-discrete source and drain regions
Grant 9,564,522 - Cea , et al. February 7, 2 | 2017-02-07 |
High Mobility Strained Channels For Fin-based Nmos Transistors
App 20160351701 - CEA; STEPHEN M. ; et al. | 2016-12-01 |
Two-dimensional Condensation For Uniaxially Strained Semiconductor Fins
App 20160329403 - Kavalieros; Jack T. ; et al. | 2016-11-10 |
Uniaxially strained nanowire structure
Grant 9,490,320 - Cea , et al. November 8, 2 | 2016-11-08 |
Tunneling Field Effect Transistors (tfets) For Cmos Architectures And Approaches To Fabricating N-type And P-type Tfets
App 20160322480 - Kotlyar; Roza ; et al. | 2016-11-03 |
Conversion of strain-inducing buffer to electrical insulator
Grant 9,472,613 - Cappellani , et al. October 18, 2 | 2016-10-18 |
Dual Strained Cladding Layers For Semiconductor Devices
App 20160276347 - CEA; STEPHEN M ; et al. | 2016-09-22 |
Nmos And Pmos Strained Devices Without Relaxed Substrates
App 20160240616 - CEA; Stephen M. ; et al. | 2016-08-18 |
Two-dimensional condensation for uniaxially strained semiconductor fins
Grant 9,419,140 - Kavalieros , et al. August 16, 2 | 2016-08-16 |
N-type and P-type tunneling field effect transistors (TFETs)
Grant 9,412,872 - Kotlyar , et al. August 9, 2 | 2016-08-09 |
Ge and III-V Channel Semiconductor Devices having Maximized Compliance and Free Surface Relaxation
App 20160204246 - PILLARISETTY; RAVI ; et al. | 2016-07-14 |
Cmos Nanowire Structure
App 20160086951 - Kim; Seiyon ; et al. | 2016-03-24 |
Uniaxially Strained Nanowire Structure
App 20160079360 - Cea; Stephen M. ; et al. | 2016-03-17 |
High Mobility Strained Channels For Fin-based Transistors
App 20160071934 - Cea; Stephen M. ; et al. | 2016-03-10 |
Two-dimensional Condensation For Uniaxially Strained Semiconductor Fins
App 20160049513 - Kavalieros; Jack T. ; et al. | 2016-02-18 |
Conversion Of Strain-inducing Buffer To Electrical Insulator
App 20150380481 - CAPPELLANI; ANNALISA ; et al. | 2015-12-31 |
Uniaxially strained nanowire structure
Grant 9,224,808 - Cea , et al. December 29, 2 | 2015-12-29 |
CMOS nanowire structure
Grant 9,224,810 - Kim , et al. December 29, 2 | 2015-12-29 |
Nanowire Structures Having Non-discrete Source And Drain Regions
App 20150325648 - CEA; Stephen M. ; et al. | 2015-11-12 |
High mobility strained channels for fin-based transistors
Grant 9,184,294 - Cea , et al. November 10, 2 | 2015-11-10 |
Silicon And Silicon Germanium Nanowire Structures
App 20150303258 - KUHN; Kelin J. ; et al. | 2015-10-22 |
Two-dimensional condensation for uniaxially strained semiconductor fins
Grant 9,159,835 - Kavalieros , et al. October 13, 2 | 2015-10-13 |
Conversion of strain-inducing buffer to electrical insulator
Grant 9,129,827 - Cappellani , et al. September 8, 2 | 2015-09-08 |
Silicon and silicon germanium nanowire structures
Grant 9,129,829 - Kuhn , et al. September 8, 2 | 2015-09-08 |
Nanowire structures having non-discrete source and drain regions
Grant 9,087,863 - Cea , et al. July 21, 2 | 2015-07-21 |
Conversion Of Thin Transistor Elements From Silicon To Silicon Germanium
App 20150115216 - Glass; Glenn A. ; et al. | 2015-04-30 |
Conversion of thin transistor elements from silicon to silicon germanium
Grant 8,957,476 - Glass , et al. February 17, 2 | 2015-02-17 |
Tunneling Field Effect Transistors (tfets) For Cmos Architectures And Approaches To Fabricating N-type And P-type Tfets
App 20150041847 - Kotlyar; Roza ; et al. | 2015-02-12 |
High Mobility Strained Channels For Fin-based Transistors
App 20150008484 - Cea; Stephen M. ; et al. | 2015-01-08 |
Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs
Grant 8,890,120 - Kotlyar , et al. November 18, 2 | 2014-11-18 |
Silicon And Silicon Germanium Nanowire Structures
App 20140326952 - KUHN; Kelin J. ; et al. | 2014-11-06 |
High mobility strained channels for fin-based transistors
Grant 8,847,281 - Cea , et al. September 30, 2 | 2014-09-30 |
Conversion Of Strain-inducing Buffer To Electrical Insulator
App 20140285980 - Cappellani; Annalisa ; et al. | 2014-09-25 |
Nanowire Structures Having Wrap-around Contacts
App 20140209855 - Cea; Stephen M. ; et al. | 2014-07-31 |
Cmos Nanowire Structure
App 20140197377 - Kim; Seiyon ; et al. | 2014-07-17 |
Conversion Of Thin Transistor Elements From Silicon To Silicon Germanium
App 20140175543 - Glass; Glenn A. ; et al. | 2014-06-26 |
Silicon and silicon germanium nanowire structures
Grant 8,753,942 - Kuhn , et al. June 17, 2 | 2014-06-17 |
Tunneling Field Effect Transistors (tfets) For Cmos Architectures And Approaches To Fabricating N-type And P-type Tfets
App 20140138744 - Kotlyar; Roza ; et al. | 2014-05-22 |
Uniaxially Strained Nanowire Structure
App 20140131660 - Cea; Stephen M. ; et al. | 2014-05-15 |
Non-Planar Device Having Uniaxially Strained Semiconductor Body and Method of Making Same
App 20140070273 - Cea; Stephen M. ; et al. | 2014-03-13 |
Nanowire Structures Having Non-discrete Source And Drain Regions
App 20140042386 - Cea; Stephen M. ; et al. | 2014-02-13 |
High Mobility Strained Channels For Fin-based Transistors
App 20140027816 - Cea; Stephen M. ; et al. | 2014-01-30 |
Through Gate Fin Isolation
App 20140001572 - BOHR; Mark T. ; et al. | 2014-01-02 |
Semiconductor Device With Isolated Body Portion
App 20130320455 - Cappellani; Annalisa ; et al. | 2013-12-05 |
Non-planar device having uniaxially strained semiconductor body and method of making same
Grant 8,558,279 - Cea , et al. October 15, 2 | 2013-10-15 |
Methods and apparatus to reduce layout based strain variations in non-planar transistor structures
Grant 8,487,348 - Cea , et al. July 16, 2 | 2013-07-16 |
Methods And Apparatus To Reduce Layout Based Strain Variations In Non-planar Transistor Structures
App 20120305990 - Cea; Stephen M ; et al. | 2012-12-06 |
Two-dimensional Condensation For Uniaxially Strained Semiconductor Fins
App 20120241818 - Kavalieros; Jack T. ; et al. | 2012-09-27 |
Methods and apparatus to reduce layout based strain variations in non-planar transistor structures
Grant 8,269,283 - Cea , et al. September 18, 2 | 2012-09-18 |
Two-dimensional condensation for uniaxially strained semiconductor fins
Grant 8,211,772 - Kavalieros , et al. July 3, 2 | 2012-07-03 |
Silicon And Silicon Germanium Nanowire Structures
App 20120138886 - Kuhn; Kelin J. ; et al. | 2012-06-07 |
Non-planar device having uniaxially strained semiconductor body and method of making same
App 20120074464 - Cea; Stephen M. ; et al. | 2012-03-29 |
Trigate transistor having extended metal gate electrode
Grant 8,120,073 - Rakshit , et al. February 21, 2 | 2012-02-21 |
Isolated tri-gate transistor fabricated on bulk substrate
Grant 7,973,389 - Rios , et al. July 5, 2 | 2011-07-05 |
Methods and apparatus to reduce layout based strain variations in non-planar transistor structures
App 20110147847 - Cea; Stephen M. ; et al. | 2011-06-23 |
Wrap-around Contacts For Finfet And Tri-gate Devices
App 20110147840 - Cea; Stephen M. ; et al. | 2011-06-23 |
Two-dimensional Condensation For Uniaxially Strained Semiconductor Fins
App 20110147811 - Kavalieros; Jack T. ; et al. | 2011-06-23 |
Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
Grant 7,781,771 - Lindert , et al. August 24, 2 | 2010-08-24 |
Trigate transistor having extended metal gate electrode
App 20100163970 - Rakshit; Titash ; et al. | 2010-07-01 |
Multiple oxide thickness for a semiconductor device
Grant 7,719,057 - Giles , et al. May 18, 2 | 2010-05-18 |
Isolated tri-gate transistor fabricated on bulk substrate
App 20100059821 - Rios; Rafael ; et al. | 2010-03-11 |
Systems And Methods To Increase Uniaxial Compressive Stress In Tri-Gate Transistors
App 20090152589 - Rakshit; Titash ; et al. | 2009-06-18 |
Multiple Oxide Thickness For A Semiconductor Device
App 20090032872 - Giles; Martin D. ; et al. | 2009-02-05 |
Isolated Tri-gate Transistor Fabricated On Bulk Substrate
App 20090020792 - Rios; Rafael ; et al. | 2009-01-22 |
Transistor with strain-inducing structure in channel
Grant 7,473,591 - Cea , et al. January 6, 2 | 2009-01-06 |
Gate-induced strain for MOS performance improvement
Grant 7,452,764 - Hoffmann , et al. November 18, 2 | 2008-11-18 |
Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
App 20080142841 - Lindert; Nick ; et al. | 2008-06-19 |
Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
Grant 7,326,634 - Lindert , et al. February 5, 2 | 2008-02-05 |
Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
Grant 7,154,118 - Lindert , et al. December 26, 2 | 2006-12-26 |
High concentration indium fluorine retrograde wells
Grant 7,129,533 - Weber , et al. October 31, 2 | 2006-10-31 |
Flash lamp annealing apparatus to generate electromagnetic radiation having selective wavelengths
Grant 7,102,141 - Hwang , et al. September 5, 2 | 2006-09-05 |
Transistor with strain-inducing structure in channel
App 20060084216 - Cea; Stephen M. ; et al. | 2006-04-20 |
Flash lamp annealing apparatus to generate electromagnetic radiation having selective wavelengths
App 20060065849 - Hwang; Jack ; et al. | 2006-03-30 |
Transistor with strain-inducing structure in channel
Grant 7,019,326 - Cea , et al. March 28, 2 | 2006-03-28 |
Gate-induced strain for MOS performance improvement
Grant 6,982,433 - Hoffman , et al. January 3, 2 | 2006-01-03 |
Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
App 20050224800 - Lindert, Nick ; et al. | 2005-10-13 |
Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
App 20050218438 - Lindert, Nick ; et al. | 2005-10-06 |
Method of forming a shallow junction
Grant 6,936,505 - Keys , et al. August 30, 2 | 2005-08-30 |
Gate-induced strain for MOS performance improvement
App 20050167652 - Hoffmann, Thomas ; et al. | 2005-08-04 |
Transistor with strain-inducing structure in channel
App 20050106792 - Cea, Stephen M. ; et al. | 2005-05-19 |
High concentration indium fluorine retrograde wells
Grant 6,838,329 - Weber , et al. January 4, 2 | 2005-01-04 |
Gate-induced strain for MOS performance improvement
App 20040253776 - Hoffmann, Thomas ; et al. | 2004-12-16 |
Method of forming a shallow junction
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High concentration indium fluorine retrograde wells
App 20040188767 - Weber, Cory E. ; et al. | 2004-09-30 |
High concentration indium fluorine retrograde wells
App 20040192055 - Weber, Cory E. ; et al. | 2004-09-30 |
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