loadpatents
name:-0.070311069488525
name:-0.01328706741333
name:-0.016197919845581
Cea; Stephen Patent Filings

Cea; Stephen

Patent Applications and Registrations

Patent applications and USPTO patent grants for Cea; Stephen.The latest application filed is for "transistor contact area enhancement".

Company Profile
9.4.18
  • Cea; Stephen - Hillsboro OR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Stacked nanowire transistor structure with different channel geometries for stress
Grant 11,367,722 - Lilak , et al. June 21, 2
2022-06-21
Transistor Contact Area Enhancement
App 20220157984 - MEHANDRU; Rishabh ;   et al.
2022-05-19
Transistor contact area enhancement
Grant 11,276,780 - Mehandru , et al. March 15, 2
2022-03-15
Multiple Strain States In Epitaxial Transistor Channel Through The Incorporation Of Stress-relief Defects Within An Underlying Seed Material
App 20210257492 - Lilak; Aaron ;   et al.
2021-08-19
Gate-all-around Integrated Circuit Structures Having Insulator Substrate
App 20210202534 - LIN; Chung-Hsun ;   et al.
2021-07-01
Removal Of A Bottom-most Nanowire From A Nanowire Device Stack
App 20210159312 - Lilak; Aaron ;   et al.
2021-05-27
Removal of a bottom-most nanowire from a nanowire device stack
Grant 10,892,326 - Lilak , et al. January 12, 2
2021-01-12
Sub-fin Leakage Reduction For Template Strained Materials
App 20200411640 - MEHANDRU; Rishabh ;   et al.
2020-12-31
Deep Source & Drain For Transistor Structures With Back-side Contact Metallization
App 20200303509 - MEHANDRU; Rishabh ;   et al.
2020-09-24
Wrap-around Contact Structures For Semiconductor Nanowires And Nanoribbons
App 20200219997 - MEHANDRU; Rishabh ;   et al.
2020-07-09
Gate-all-around Integrated Circuit Structures Having Vertically Discrete Source Or Drain Structures
App 20200105871 - GLASS; Glenn ;   et al.
2020-04-02
Gate-all-around Integrated Circuit Structures Having High Mobility
App 20200105753 - KOTLYAR; Roza ;   et al.
2020-04-02
Stacked Nanowire Transistor Structure With Different Channel Geometries For Stress
App 20200098756 - Lilak; Aaron ;   et al.
2020-03-26
Channel Structures With Sub-fin Dopant Diffusion Blocking Layers
App 20200006332 - BOMBERGER; Cory ;   et al.
2020-01-02
Transistor Contact Area Enhancement
App 20200006546 - MEHANDRU; Rishabh ;   et al.
2020-01-02
Removal Of A Bottom-most Nanowire From A Nanowire Device Stack
App 20190333990 - Lilak; Aaron ;   et al.
2019-10-31
Spin Transfer Torque Memory And Logic Devices Having An Interface For Inducing A Strain On A Magnetic Layer Therein
App 20170263853 - Manipatruni; Sasikanth ;   et al.
2017-09-14
PMOS transistor strain optimization with raised junction regions
App 20070034945 - Bohr; Mark T. ;   et al.
2007-02-15
Integrated circuit with improved channel stress properties and a method for making it
Grant 7,045,408 - Hoffmann , et al. May 16, 2
2006-05-16
PMOS transistor strain optimization with raised junction regions
App 20040262683 - Bohr, Mark T. ;   et al.
2004-12-30
Integrated circuit with improved channel stress properties and a method for making it
App 20040235236 - Hoffmann, Thomas ;   et al.
2004-11-25
Codoping of source drains using carbon or fluorine ion implants to improve polysilicon depletion
App 20040102013 - Hwang, Jack ;   et al.
2004-05-27

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