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name:-0.020609140396118
name:-0.00177001953125
Caubet; Pierre Patent Filings

Caubet; Pierre

Patent Applications and Registrations

Patent applications and USPTO patent grants for Caubet; Pierre.The latest application filed is for "process for forming a layer of equiaxed titanium nitride and a mosfet device having a metal gate electrode including a layer of equiaxed titanium nitride".

Company Profile
1.17.16
  • Caubet; Pierre - Le Versoud FR
  • Caubet; Pierre - Meylan FR
  • CAUBET; Pierre - LEVERSOUD FR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride
Grant 10,211,059 - Caubet , et al. Feb
2019-02-19
Transistor having a gate comprising a titanium nitride layer and method for depositing this layer
Grant 9,953,837 - Caubet , et al. April 24, 2
2018-04-24
Process For Forming A Layer Of Equiaxed Titanium Nitride And A Mosfet Device Having A Metal Gate Electrode Including A Layer Of Equiaxed Titanium Nitride
App 20170256625 - Caubet; Pierre ;   et al.
2017-09-07
Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride
Grant 9,691,871 - Caubet , et al. June 27, 2
2017-06-27
Process For Forming A Layer Of Equiaxed Titanium Nitride And A Mosfet Device Having A Metal Gate Electrode Including A Layer Of Equiaxed Titanium Nitride
App 20170179250 - Caubet; Pierre ;   et al.
2017-06-22
Optoelectronic device, in particular memory device
Grant 9,536,599 - Caubet , et al. January 3, 2
2017-01-03
Optoelectronic device, in particular memory device
Grant 9,530,489 - Caubet , et al. December 27, 2
2016-12-27
Optoelectronic Device, In Particular Memory Device
App 20160372183 - CAUBET; PIERRE ;   et al.
2016-12-22
Method for producing a metal-gate MOS transistor, in particular a PMOS transistor, and corresponding integrated circuit
Grant 9,257,518 - Baudot , et al. February 9, 2
2016-02-09
Transistor Having A Gate Comprising A Titanium Nitride Layer And Method For Depositing This Layer
App 20150200099 - CAUBET; PIERRE ;   et al.
2015-07-16
Method for depositing a low-diffusion TiAlN layer and insulated gate comprising such a layer
Grant 9,029,254 - Caubet , et al. May 12, 2
2015-05-12
Optoelectronic Device, In Particular Memory Device
App 20150117128 - CAUBET; Pierre ;   et al.
2015-04-30
Transistors having a gate comprising a titanium nitride layer
Grant 9,000,596 - Caubet , et al. April 7, 2
2015-04-07
Method For Producing A Metal-gate Mos Transistor, In Particular A Pmos Transistor, And Corresponding Integrated Circuit
App 20140319616 - Baudot; Sylvain ;   et al.
2014-10-30
Method For Depositing A Low-diffusion Tialn Layer And Insulated Gate Comprising Such A Layer
App 20140097504 - CAUBET; Pierre ;   et al.
2014-04-10
Transistors Having A Gate Comprising A Titanium Nitride Layer And Method For Depositing This Layer
App 20130001708 - Caubet; Pierre ;   et al.
2013-01-03
Implementation of a metal barrier in an integrated electronic circuit
Grant 8,053,871 - Caubet , et al. November 8, 2
2011-11-08
Production of a self-aligned CuSiN barrier
Grant 8,018,062 - Caubet , et al. September 13, 2
2011-09-13
Integrated electrooptic system
Grant 8,013,284 - Caubet , et al. September 6, 2
2011-09-06
Electronic component comprising a titanium carbonitride (TiCN) barrier layer and process of making the same
Grant 7,851,915 - Caubet , et al. December 14, 2
2010-12-14
Implementation Of A Metal Barrier In An Integrated Electronic Circuit
App 20100155950 - Dumas; Laurin ;   et al.
2010-06-24
Production Of A Self-aligned Cusin Barrier
App 20100133634 - Caubet; Pierre ;   et al.
2010-06-03
Integrated Electrooptic System
App 20100108867 - Caubet; Pierre ;   et al.
2010-05-06
Production of a self-aligned CuSiN barrier
Grant 7,687,399 - Caubet , et al. March 30, 2
2010-03-30
Integrated electrooptic system
Grant 7,667,173 - Caubet , et al. February 23, 2
2010-02-23
Implementation of a metal barrier in an integrated electronic circuit
Grant 7,601,636 - Dumas , et al. October 13, 2
2009-10-13
Process for forming integrated circuit comprising copper lines
Grant 7,531,447 - Caubet , et al. May 12, 2
2009-05-12
Integrated electrooptic system
App 20090008531 - Caubet; Pierre ;   et al.
2009-01-08
ELECTRONIC COMPONENT COMPRISING A TITANIUM CARBONITRIDE (TiCN) BARRIER LAYER AND PROCESS OF MAKING THE SAME
App 20080290417 - Caubet; Pierre ;   et al.
2008-11-27
Implementation Of A Metal Barrier In An Integrated Electronic Circuit
App 20080088022 - Dumas; Laurin ;   et al.
2008-04-17
Production of a self-aligned CuSiN barrier
App 20070035029 - Caubet; Pierre ;   et al.
2007-02-15
Integrated circuit comprising copper lines and process for forming copper lines
App 20060060976 - Caubet; Pierre ;   et al.
2006-03-23

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