loadpatents
name:-0.030294179916382
name:-0.0010690689086914
name:-0.0014550685882568
Carter; Calvin H. JR. Patent Filings

Carter; Calvin H. JR.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Carter; Calvin H. JR..The latest application filed is for "micropipe-free silicon carbide and related method of manufacture".

Company Profile
0.0.15
  • Carter; Calvin H. JR. - Durham NC
  • Carter; Calvin H. JR. - Cary NC
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Micropipe-free Silicon Carbide And Related Method Of Manufacture
App 20080083366 - Basceri; Cem ;   et al.
2008-04-10
Micropipe-free Silicon Carbide And Related Method Of Manufacture
App 20080067524 - Basceri; Cem ;   et al.
2008-03-20
Minimizing Degradation of SiC Bipolar Semiconductor Devices
App 20070117336 - Sumakeris; Joseph J. ;   et al.
2007-05-24
Seeded single crystal silicon carbide growth and resulting crystals
App 20060213430 - Jenny; Jason Ronald ;   et al.
2006-09-28
Process for producing silicon carbide crystals having increased minority carrier lifetimes
App 20060130742 - Carter; Calvin H. JR. ;   et al.
2006-06-22
One hundred millimeter single crystal silicon carbide wafer
App 20060107890 - Hobgood; Hudson McDonald ;   et al.
2006-05-25
Minimizing degradation of SiC bipolar semiconductor devices
App 20050116234 - Sumakeris, Joseph J. ;   et al.
2005-06-02
Minimizing degradation of SiC bipolar semiconductor devices
App 20050118746 - Sumakeris, Joseph J. ;   et al.
2005-06-02
Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
App 20050082542 - Sumakeris, Joseph John ;   et al.
2005-04-21
Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
App 20050022727 - Fechko, George J. JR. ;   et al.
2005-02-03
Semi-Insulating Silicon Carbide Produced by Neutron Transmutation Doping
App 20040201024 - Tsvetkov, Valeri F. ;   et al.
2004-10-14
Minimizing degradation of SiC bipolar semiconductor devices
App 20030080842 - Sumakeris, Joseph J. ;   et al.
2003-05-01
Semi-insulating silicon carbide without vanadium domination
App 20010023945 - Carter, Calvin H. JR. ;   et al.
2001-09-27
Semi-insulating silicon carbide without vanadium domination
App 20010019132 - Carter, Calvin H. JR. ;   et al.
2001-09-06
Semi-insulating silicon carbide without vanadium domination
App 20010017374 - Carter, Calvin H. JR. ;   et al.
2001-08-30

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