Carter; Andrew John

Patent Applications and Registrations

Patent applications and USPTO patent grants for Carter; Andrew John.The latest application filed is for "bidirectional non-volatile memory array architecture".

Company Profile

0.12.11

Carter; Andrew John - Minneapolis MN US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Non-volatile memory cell with multiple resistive sense elements sharing a common switching device Grant 8,861,244 - Carter , et al. October 14, 2	2014-10-14
Bidirectional non-volatile memory array architecture Grant 8,422,271 - Carter , et al. April 16, 2	2013-04-16
Non-volatile memory cell with resistive sense element block erase and uni-directional write Grant 8,213,259 - Reed , et al. July 3, 2	2012-07-03
Current cancellation for non-volatile memory Grant 8,203,894 - Jung , et al. June 19, 2	2012-06-19
Bidirectional Non-Volatile Memory Array Architecture App 20120147659 - Carter; Andrew John ; et al.	2012-06-14
Bidirectional non-volatile memory array architecture Grant 8,120,941 - Carter , et al. February 21, 2	2012-02-21
Multi-stage parallel data transfer Grant 8,045,412 - Lu , et al. October 25, 2	2011-10-25
Current magnitude compensation for memory cells in a data storage array Grant 8,004,875 - Siegert , et al. August 23, 2	2011-08-23
Current Cancellation for Non-Volatile Memory App 20110182106 - Jung; Chulmin ; et al.	2011-07-28
Non-Volatile Memory Cell with Multiple Resistive Sense Elements Sharing a Common Switching Device App 20110149639 - Carter; Andrew John ; et al.	2011-06-23
Current cancellation for non-volatile memory Grant 7,965,565 - Jung , et al. June 21, 2	2011-06-21
Non-volatile memory cell with multiple resistive sense elements sharing a common switching device Grant 7,933,136 - Carter , et al. April 26, 2	2011-04-26
Non-volatile memory array with resistive sense element block erase and uni-directional write Grant 7,885,097 - Reed , et al. February 8, 2	2011-02-08
Non-Volatile Memory Array With Resistive Sense Element Block Erase and Uni-Directional Write App 20110026305 - Reed; Daniel S. ; et al.	2011-02-03
Current Magnitude Compensation for Memory Cells in a Data Storage Array App 20110007550 - Siegert; Markus Jan Peter ; et al.	2011-01-13
Current Cancellation for Non-Volatile Memory App 20110007581 - Jung; Chulmin ; et al.	2011-01-13
Bidirectional Non-Volatile Memory Array Architecture App 20100118590 - Carter; Andrew John ; et al.	2010-05-13
Double Source Line-based Memory Array And Memory Cells Thereof App 20100118602 - Carter; Andrew John ; et al.	2010-05-13
Non-Volatile Memory Cell with Multiple Resistive Sense Elements Sharing a Common Switching Device App 20100118589 - Carter; Andrew John ; et al.	2010-05-13
Multi-Stage Parallel Data Transfer App 20100097841 - Lu; Yong ; et al.	2010-04-22
Non-Volatile Memory Array with Resistive Sense Element Block Erase and Uni-Directional Write App 20100091548 - Reed; Daniel S. ; et al.	2010-04-15

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