Cappellani; Annalisa

Patent Applications and Registrations

Patent applications and USPTO patent grants for Cappellani; Annalisa.The latest application filed is for "silicon and silicon germanium nanowire structures".

Company Profile

12.66.83

Cappellani; Annalisa - Portland OR
Cappellani, Annalisa - Dresden DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Silicon And Silicon Germanium Nanowire Structures App 20210226006 - Kuhn; Kelin J. ; et al.	2021-07-22
Gate Contact Structure Over Active Gate And Method To Fabricate Same App 20210210385 - PETHE; Abhijit Jayant ; et al.	2021-07-08
Gate contact structure over active gate and method to fabricate same Grant 11,004,739 - Pethe , et al. May 11, 2	2021-05-11
Silicon and silicon germanium nanowire structures Grant 10,991,799 - Kuhn , et al. April 27, 2	2021-04-27
Gate-all-around (GAA) transistors with nanowires on an isolation pedestal Grant 10,847,631 - Cappellani , et al. November 24, 2	2020-11-24
Semiconductor device having metallic source and drain regions Grant 10,847,653 - Giles , et al. November 24, 2	2020-11-24
Silicon And Silicon Germanium Nanowire Structures App 20200227520 - KUHN; Kelin J. ; et al.	2020-07-16
Nanowire Structures Having Non-discrete Source And Drain Regions App 20200152797 - CEA; Stephen M. ; et al.	2020-05-14
Silicon and silicon germanium nanowire structures Grant 10,636,871 - Kuhn , et al.	2020-04-28
Nanowire structures having non-discrete source and drain regions Grant 10,580,899 - Cea , et al.	2020-03-03
Semiconductor devices having modulated nanowire counts Grant 10,424,580 - Cappellani , et al. Sept	2019-09-24
Strained Gate-all-around Semiconductor Devices Formed On Globally Or Locally Isolated Substrates App 20190157411 - CAPPELLANI; Annalisa ; et al.	2019-05-23
Gate Contact Structure Over Active Gate And Method To Fabricate Same App 20190115257 - PETHE; Abhijit Jayant ; et al.	2019-04-18
Gate-all-around (GAA) transistor with stacked nanowires on locally isolated substrate Grant 10,229,981 - Cappellani , et al.	2019-03-12
Gate contact structure over active gate and method to fabricate same Grant 10,192,783 - Pethe , et al. Ja	2019-01-29
CMOS nanowire structure Grant 10,074,573 - Kim , et al. September 11, 2	2018-09-11
Semiconductor device with isolated body portion Grant 10,026,829 - Cappellani , et al. July 17, 2	2018-07-17
Isolated and bulk semiconductor devices formed on a same bulk substrate Grant 9,978,636 - Cappellani , et al. May 22, 2	2018-05-22
Uniaxially strained nanowire structure Grant 9,905,650 - Cea , et al. February 27, 2	2018-02-27
Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition Grant 9,691,843 - Cappellani , et al. June 27, 2	2017-06-27
Semiconductor Device With Isolated Body Portion App 20170162676 - CAPPELLANI; Annalisa ; et al.	2017-06-08
Conversion of strain-inducing buffer to electrical insulator Grant 9,673,302 - Cappellani , et al. June 6, 2	2017-06-06
Nanowire Structures Having Non-discrete Source And Drain Regions App 20170141239 - CEA; Stephen M. ; et al.	2017-05-18
Cmos Nanowire Structure App 20170133277 - KIM; Seiyon ; et al.	2017-05-11
Silicon And Silicon Germanium Nanowire Structures App 20170133462 - KUHN; Kelin J. ; et al.	2017-05-11
Semiconductor Device Having Metallic Source And Drain Regions App 20170125591 - GILES; Martin D. ; et al.	2017-05-04
Semiconductor device with isolated body portion Grant 9,608,059 - Cappellani , et al. March 28, 2	2017-03-28
Silicon and silicon germanium nanowire structures Grant 9,595,581 - Kuhn , et al. March 14, 2	2017-03-14
Semiconductor device having metallic source and drain regions Grant 9,583,487 - Giles , et al. February 28, 2	2017-02-28
CMOS nanowire structure Grant 9,583,491 - Kim , et al. February 28, 2	2017-02-28
Strained Gate-all-around Semiconductor Devices Formed On Globally Or Locally Isolated Substrates App 20170047416 - Cappellani; Annalisa ; et al.	2017-02-16
Uniaxially Strained Nanowire Structure App 20170047405 - Cea; Stephen M. ; et al.	2017-02-16
Conversion Of Strain-inducing Buffer To Electrical Insulator App 20170040438 - CAPPELLANI; ANNALISA ; et al.	2017-02-09
Nanowire structures having non-discrete source and drain regions Grant 9,564,522 - Cea , et al. February 7, 2	2017-02-07
Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition Grant 9,559,160 - Cappellani , et al. January 31, 2	2017-01-31
Three-dimensional Germanium-based Semiconductor Devices Formed On Globally Or Locally Isolated Substrates App 20170025499 - Cappellani; Annalisa ; et al.	2017-01-26
Gate Contact Structure Over Active Gate And Method To Fabricate Same App 20170004998 - Pethe; Abhijit Jayant ; et al.	2017-01-05
Isolated And Bulk Semiconductor Devices Formed On A Same Bulk Substrate App 20160336219 - Cappellani; Annalisa ; et al.	2016-11-17
Uniaxially strained nanowire structure Grant 9,490,320 - Cea , et al. November 8, 2	2016-11-08
Methods for fabricating strained gate-all-around semiconductor devices by fin oxidation using an undercut etch-stop layer Grant 9,484,272 - Cappellani , et al. November 1, 2	2016-11-01
Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates Grant 9,472,399 - Cappellani , et al. October 18, 2	2016-10-18
Conversion of strain-inducing buffer to electrical insulator Grant 9,472,613 - Cappellani , et al. October 18, 2	2016-10-18
Gate contact structure over active gate and method to fabricate same Grant 9,461,143 - Pethe , et al. October 4, 2	2016-10-04
Methods for Fabricating Strained Gate-All-Around Semiconductor Devices by Fin Oxidation Using an Undercut Etch-Stop Layer App 20160284605 - Cappellani; Annalisa ; et al.	2016-09-29
Isolated and bulk semiconductor devices formed on a same bulk substrate Grant 9,425,212 - Cappellani , et al. August 23, 2	2016-08-23
Common-substrate Semiconductor Devices Having Nanowires Or Semiconductor Bodies With Differing Material Orientation Or Composition App 20160133735 - CAPPELLANI; Annalisa ; et al.	2016-05-12
Cmos Nanowire Structure App 20160086951 - Kim; Seiyon ; et al.	2016-03-24
Uniaxially Strained Nanowire Structure App 20160079360 - Cea; Stephen M. ; et al.	2016-03-17
Conversion Of Strain-inducing Buffer To Electrical Insulator App 20150380481 - CAPPELLANI; ANNALISA ; et al.	2015-12-31
CMOS nanowire structure Grant 9,224,810 - Kim , et al. December 29, 2	2015-12-29
Uniaxially strained nanowire structure Grant 9,224,808 - Cea , et al. December 29, 2	2015-12-29
Nanowire Structures Having Non-discrete Source And Drain Regions App 20150325648 - CEA; Stephen M. ; et al.	2015-11-12
Strained Gate-all-around Semiconductor Devices Formed On Globally Or Locally Isolated Substrates App 20150318219 - Cappellani; Annalisa ; et al.	2015-11-05
Silicon And Silicon Germanium Nanowire Structures App 20150303258 - KUHN; Kelin J. ; et al.	2015-10-22
Three-dimensional Germanium-based Semiconductor Devices Formed On Globally Or Locally Isolated Substrates App 20150255280 - Cappellani; Annalisa ; et al.	2015-09-10
Conversion of strain-inducing buffer to electrical insulator Grant 9,129,827 - Cappellani , et al. September 8, 2	2015-09-08
Silicon and silicon germanium nanowire structures Grant 9,129,829 - Kuhn , et al. September 8, 2	2015-09-08
Nanowire structures having non-discrete source and drain regions Grant 9,087,863 - Cea , et al. July 21, 2	2015-07-21
Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates Grant 9,041,106 - Cappellani , et al. May 26, 2	2015-05-26
Semiconductor devices having three-dimensional bodies with modulated heights Grant 9,029,221 - Cappellani , et al. May 12, 2	2015-05-12
Junctionless Accumulation-mode Device Isolated From Semiconductive Substrate By Reverse-bias Junction App 20150021553 - CAPPELLANI; ANNALISA ; et al.	2015-01-22
Silicon And Silicon Germanium Nanowire Structures App 20140326952 - KUHN; Kelin J. ; et al.	2014-11-06
Junctionless accumulation-mode devices on decoupled prominent architectures Grant 8,853,741 - Cappellani , et al. October 7, 2	2014-10-07
Conversion Of Strain-inducing Buffer To Electrical Insulator App 20140285980 - Cappellani; Annalisa ; et al.	2014-09-25
Cmos Nanowire Structure App 20140197377 - Kim; Seiyon ; et al.	2014-07-17
Silicon and silicon germanium nanowire structures Grant 8,753,942 - Kuhn , et al. June 17, 2	2014-06-17
Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates Grant 8,735,869 - Cappellani , et al. May 27, 2	2014-05-27
Uniaxially Strained Nanowire Structure App 20140131660 - Cea; Stephen M. ; et al.	2014-05-15
Three-dimensional Germanium-based Semiconductor Devices Formed On Globally Or Locally Isolated Substrates App 20140084370 - Cappellani; Annalisa ; et al.	2014-03-27
Strained Gate-all-around Semiconductor Devices Formed On Globally Or Locally Isolated Substrates App 20140084342 - Cappellani; Annalisa ; et al.	2014-03-27
Gate Contact Structure Over Active Gate And Method To Fabricate Same App 20140077305 - Pethe; Abhijit Jayant ; et al.	2014-03-20
Nanowire Structures Having Non-discrete Source And Drain Regions App 20140042386 - Cea; Stephen M. ; et al.	2014-02-13
Semiconductor Device Having Metallic Source And Drain Regions App 20140035059 - Giles; Martin D. ; et al.	2014-02-06
Isolated And Bulk Semiconductor Devices Formed On A Same Bulk Substrate App 20140001560 - Cappellani; Annalisa ; et al.	2014-01-02
Junctionless Accumulation-mode Devices On Decoupled Prominent Architectures App 20130334572 - Cappellani; Annalisa ; et al.	2013-12-19
Semiconductor Device With Isolated Body Portion App 20130320455 - Cappellani; Annalisa ; et al.	2013-12-05
Semiconductor Devices Having Three-dimensional Bodies With Modulated Heights App 20130320448 - Cappellani; Annalisa ; et al.	2013-12-05
Common-substrate Semiconductor Devices Having Nanowires Or Semiconductor Bodies With Differing Material Orientation Or Composition App 20130320294 - Cappellani; Annalisa ; et al.	2013-12-05
Semiconductor Devices Having Modulated Nanowire Counts App 20130313513 - Cappellani; Annalisa ; et al.	2013-11-28
Junctionless accumulation-mode devices on prominent architectures, and methods of making same Grant 8,507,948 - Cappellani , et al. August 13, 2	2013-08-13
Multi-gate semiconductor device with self-aligned epitaxial source and drain Grant 8,313,999 - Cappellani , et al. November 20, 2	2012-11-20
Junctionless Accumulation-mode Devices On Prominent Architectures, And Methods Of Making Same App 20120161202 - Cappellani; Annalisa ; et al.	2012-06-28
Silicon And Silicon Germanium Nanowire Structures App 20120138886 - Kuhn; Kelin J. ; et al.	2012-06-07
Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate Grant 8,148,786 - Kavalieros , et al. April 3, 2	2012-04-03
Multi-gate Semiconductor Device With Self-aligned Epitaxial Source And Drain App 20110147842 - Cappellani; Annalisa ; et al.	2011-06-23
Method for making a semiconductor device having a high-k dielectric layer and a metal gate electrode Grant 7,671,471 - Brask , et al. March 2, 2	2010-03-02
Complementary Metal Oxide Semiconductor Integrated Circuit Using Raised Source Drain and Replacement Metal Gate App 20090261391 - KAVALIEROS; Jack ; et al.	2009-10-22
Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate Grant 7,569,443 - Kavalieros , et al. August 4, 2	2009-08-04
Method For Making A Semiconductor Device Having A High-k Dielectric Layer And A Metal Gate Electrode App 20080135952 - Brask; Justin K. ; et al.	2008-06-12
Method for making semiconductor device having a high-k gate dielectric layer and a metal gate electrode Grant 7,355,281 - Brask , et al. April 8, 2	2008-04-08
Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode Grant 7,153,784 - Brask , et al. December 26, 2	2006-12-26
Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate App 20060286729 - Kavalieros; Jack ; et al.	2006-12-21
Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode App 20060180878 - Brask; Justin K. ; et al.	2006-08-17
Semiconductor component, method for producing the semiconductor component, and method for producing electrical connections between individual circuit elements Grant 7,053,454 - Cappellani , et al. May 30, 2	2006-05-30
Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode App 20050233527 - Brask, Justin K. ; et al.	2005-10-20
Method for fabricating a MOSFET having a very small channel length Grant 6,835,612 - Cappellani , et al. December 28, 2	2004-12-28
Method for roughening a surface of a semiconductor substrate Grant 6,812,094 - Goldbach , et al. November 2, 2	2004-11-02
Method for fabricating a MOSFET having a very small channel length App 20040157380 - Cappellani, Annalisa ; et al.	2004-08-12
Method for roughening a surface of a semiconductor substrate App 20030109101 - Goldbach, Matthias ; et al.	2003-06-12
Method for producing a barrier layer in an electronic component and method for producing an electronic component with a barrier layer App 20010046765 - Cappellani, Annalisa ; et al.	2001-11-29

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