Campidelli; Yves

Patent Applications and Registrations

Patent applications and USPTO patent grants for Campidelli; Yves.The latest application filed is for "method for fabricating nmos and pmos transistors on a substrate of the soi, in particular fdsoi, type and corresponding integrated circuit".

Company Profile

0.18.15

Campidelli; Yves - Le Moutaret FR
Campidelli; Yves - Lemoutaret FR
Campidelli; Yves - Grenoble FR
Campidelli; Yves - 38000 Grenoble FR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Cyclic epitaxy process to form air gap isolation for a bipolar transistor Grant 10,186,605 - Gauthier , et al. Ja	2019-01-22
Method For Fabricating Nmos And Pmos Transistors On A Substrate Of The Soi, In Particular Fdsoi, Type And Corresponding Integrated Circuit App 20150108576 - BARGE; David ; et al.	2015-04-23
Process for producing at least one deep trench isolation Grant 8,975,154 - Dutartre , et al. March 10, 2	2015-03-10
Method for depositing a silicon oxide layer of same thickness on silicon and on silicon-germanium Grant 8,603,887 - Dutartre , et al. December 10, 2	2013-12-10
Process For Producing At Least One Deep Trench Isolation App 20130095636 - Dutartre; Didier ; et al.	2013-04-18
Method For Depositing A Silicon Oxide Layer Of Same Thickness On Silicon And On Silicon-germanium App 20130072032 - Dutartre; Didier ; et al.	2013-03-21
Process For Forming An Epitaxial Layer, In Particular On The Source And Drain Regions Of Fully-depleted Transistors App 20120252174 - Dutartre; Didier ; et al.	2012-10-04
Single-crystal semiconductor layer with heteroatomic macro-network Grant 8,263,965 - Campidelli , et al. September 11, 2	2012-09-11
Method for manufacturing a structure of semiconductor-on-insulator type Grant 8,178,426 - Halimaoui , et al. May 15, 2	2012-05-15
Single-crystal Semiconductor Layer With Heteroatomic Macro-network App 20110108801 - Bensahel; Daniel ; et al.	2011-05-12
Single-crystal semiconductor layer with heteroatomic macronetwork Grant 7,884,352 - Bensahel , et al. February 8, 2	2011-02-08
Electronic component manufacturing method Grant 7,879,679 - Kermarrec , et al. February 1, 2	2011-02-01
Single-crystal layer on a dielectric layer Grant 7,749,817 - Kermarec , et al. July 6, 2	2010-07-06
Single-crystal layer on a dielectric layer Grant 7,547,914 - Kermarec , et al. June 16, 2	2009-06-16
Electronic Component Manufacturing Method App 20080239625 - Kermarrec; Oliver ; et al.	2008-10-02
Method For Manufacturing A Structure Of Semiconductor-on-insulator Type App 20080197447 - Halimaoui; Aomar ; et al.	2008-08-21
Heteroatomic single-crystal layers Grant 7,381,267 - Bensahel , et al. June 3, 2	2008-06-03
Single-crystal layer on a dielectric layer App 20070278494 - Kermarec; Olivier ; et al.	2007-12-06
Single-Crystal Semiconductor Layer with Heteroatomic Macronetwork App 20070248818 - Bensahel; Daniel ; et al.	2007-10-25
Single-crystal layer on a dielectric layer App 20070228384 - Kermarec; Olivier ; et al.	2007-10-04
Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material Grant 7,129,563 - Cosnier , et al. October 31, 2	2006-10-31
Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material App 20040256699 - Cosnier, Vincent ; et al.	2004-12-23
Heteroatomic single-crystal layers App 20040250752 - Bensahel, Daniel ; et al.	2004-12-16
Method for making a device comprising layers of planes of quantum dots Grant 6,690,027 - Bensahel , et al. February 10, 2	2004-02-10
Method of cleaning a semiconductor process chamber App 20030221708 - Ly, Chun-Hao ; et al.	2003-12-04
Forming of quantum dots Grant 6,596,555 - Bensahel , et al. July 22, 2	2003-07-22
Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtained Grant 6,537,370 - Hernandez , et al. March 25, 2	2003-03-25
Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained Grant 6,429,098 - Bensahel , et al. August 6, 2	2002-08-06
Forming of quantum dots App 20020039833 - Bensahel, Daniel ; et al.	2002-04-04
Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively Grant 6,117,750 - Bensahel , et al. September 12, 2	2000-09-12
Process and apparatus for the growth of films of silicides of refractory metals and films obtained by this process Grant 4,643,914 - Arnaud D'Avitaya , et al. February 17, 1	1987-02-17

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