| Patent | Date |
|---|
Method of forming integrated limiter and amplifying devices
Grant 5,445,985 - Calviello , et al. August 29, 1 | 1995-08-29 |
Method of making a monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
Grant 5,356,831 - Calviello , et al. October 18, 1 | 1994-10-18 |
Integrated limiter and amplifying devices
Grant 5,341,114 - Calviello , et al. August 23, 1 | 1994-08-23 |
Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
Grant 5,164,359 - Calviello , et al. November 17, 1 | 1992-11-17 |
Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
Grant 5,159,413 - Calviello , et al. October 27, 1 | 1992-10-27 |
Buried channel FET with lateral growth over amorphous region
Grant 4,935,789 - Calviello June 19, 1 | 1990-06-19 |
T-type undercut electrical contact on a semiconductor substrate
Grant 4,935,805 - Calviello , et al. June 19, 1 | 1990-06-19 |
T-type undercut electrical contact process on a semiconductor substrate
Grant 4,923,827 - Calviello , et al. May 8, 1 | 1990-05-08 |
Method for fabricating quasi-monolithic integrated circuits
Grant 4,876,176 - Calviello , et al. October 24, 1 | 1989-10-24 |
Method for fabrication of monolithic integrated circuits
Grant 4,789,645 - Calviello , et al. December 6, 1 | 1988-12-06 |
Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies
Grant 4,724,220 - Calviello February 9, 1 | 1988-02-09 |
Method for fabricating edge channel FET
Grant 4,701,996 - Calviello October 27, 1 | 1987-10-27 |
Method for fabricating MOMOM tunnel emission transistor
Grant 4,692,997 - Calviello September 15, 1 | 1987-09-15 |
Method for fabricating MOMS semiconductor device
Grant 4,683,642 - Calviello August 4, 1 | 1987-08-04 |
Method for making an edge junction schottky diode
Grant 4,674,177 - Calviello June 23, 1 | 1987-06-23 |
MOMS tunnel emission transistor
Grant 4,631,560 - Calviello December 23, 1 | 1986-12-23 |
MOMOM tunnel emission transistor
Grant 4,630,081 - Calviello December 16, 1 | 1986-12-16 |
Buried channel MESFET with backside source contact
Grant 4,624,004 - Calviello November 18, 1 | 1986-11-18 |
Edge channel FET
Grant 4,620,207 - Calviello October 28, 1 | 1986-10-28 |
Method for fabricating buried channel field effect transistor for microwave and millimeter frequencies utilizing molecular beam epitaxy
Grant 4,601,096 - Calviello July 22, 1 | 1986-07-22 |
Light sensitive detector
Grant 4,549,194 - Calviello October 22, 1 | 1985-10-22 |
Method of making field-effect transistors with micron and submicron gate lengths
Grant 4,312,113 - Calviello January 26, 1 | 1982-01-26 |
Method of making field-effect transistors with micron and submicron gate lengths
Grant 4,312,112 - Calviello January 26, 1 | 1982-01-26 |
Field-effect transistors with micron and submicron gate lengths
Grant 4,310,570 - Calviello January 12, 1 | 1982-01-12 |
Beam lead Schottky barrier diode for operation at millimeter and submillimeter wave frequencies
Grant 4,301,233 - Calviello November 17, 1 | 1981-11-17 |
Millimeter wave semiconductor device
Grant 4,075,650 - Calviello * February 21, 1 | 1978-02-21 |
Tantalum-gallium arsenide schottky barrier semiconductor device
Grant 3,923,975 - Calviello December 2, 1 | 1975-12-02 |
Tantalum-gallium arsenide schottky barrier semiconductor device
Grant 3,886,580 - Calviello May 27, 1 | 1975-05-27 |
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