| Patent | Date |
|---|
Forming replacement low-k spacer in tight pitch fin field effect transistors
Grant 11,374,111 - Cai , et al. June 28, 2 | 2022-06-28 |
Two-filter light detection devices and methods related to same
Grant 11,256,033 - Cai February 22, 2 | 2022-02-22 |
Light Detection Devices With Protective Liner And Methods Related To Same
App 20210208072 - CAI; Xiuyu ; et al. | 2021-07-08 |
Image Sensor Structure
App 20210098521 - CAI; Xiuyu ; et al. | 2021-04-01 |
Light detection devices with protective liner and methods related to same
Grant 10,955,343 - Cai , et al. March 23, 2 | 2021-03-23 |
Image sensor structure
Grant 10,879,296 - Cai , et al. December 29, 2 | 2020-12-29 |
Two-filter Light Detection Devices And Methods Related To Same
App 20200264376 - CAI; Xiuyu | 2020-08-20 |
Large area contacts for small transistors
Grant 10,749,031 - Cai , et al. A | 2020-08-18 |
Unmerged epitaxial process for FinFET devices with aggressive fin pitch scaling
Grant 10,734,499 - Cai , et al. | 2020-08-04 |
Flow Cell Systems And Methods Related To Same
App 20200164360 - RIVAL; Arnaud ; et al. | 2020-05-28 |
Forming Replacement Low-k Spacer In Tight Pitch Fin Field Effect Transistors
App 20200152765 - CAI; XIUYU ; et al. | 2020-05-14 |
Two-filter light detection devices and methods related to same
Grant 10,649,145 - Cai | 2020-05-12 |
Sensors Having Integrated Protection Circuitry
App 20200132605 - Fung; Tracy Helen ; et al. | 2020-04-30 |
Structure and Method to Use Active Surface of a Sensor
App 20200124523 - Lu; Donglai ; et al. | 2020-04-23 |
Semiconductor structure including low-K spacer material
Grant 10,629,743 - Cai , et al. | 2020-04-21 |
Forming replacement low-K spacer in tight pitch fin field effect transistors
Grant 10,622,457 - Cai , et al. | 2020-04-14 |
FinFET including tunable fin height and tunable fin width ratio
Grant 10,622,357 - Cai , et al. | 2020-04-14 |
Forming replacement low-K spacer in tight pitch fin field effect transistors
Grant 10,593,780 - Cai , et al. | 2020-03-17 |
CMOS structure having low resistance contacts and fabrication method
Grant 10,546,856 - Liu , et al. Ja | 2020-01-28 |
Method and structure for protecting gates during epitaxial growth
Grant 10,446,665 - Cai , et al. Oc | 2019-10-15 |
Unmerged epitaxial process for FinFET devices with aggressive fin pitch scaling
Grant 10,388,754 - Cai , et al. A | 2019-08-20 |
Semiconductor structure including low-k spacer material
Grant 10,361,311 - Cai , et al. | 2019-07-23 |
FinFETs having strained channels, and methods of fabricating finFETs having strained channels
Grant 10,355,020 - Liu , et al. July 16, 2 | 2019-07-16 |
High doped III-V source/drain junctions for field effect transistors
Grant 10,355,086 - Cai , et al. July 16, 2 | 2019-07-16 |
Finfet Including Tunable Fin Height And Tunable Fin Width Ratio
App 20190206868 - Cai; Xiuyu ; et al. | 2019-07-04 |
Light Detection Devices With Protective Liner And Methods Related To Same
App 20190195797 - CAI; Xiuyu ; et al. | 2019-06-27 |
Image Sensor Structure
App 20190198553 - CAI; Xiuyu ; et al. | 2019-06-27 |
Two-filter Light Detection Devices And Methods Related To Same
App 20190196108 - CAI; Xiuyu | 2019-06-27 |
Semiconductor Structure Including Low-k Spacer Material
App 20190148557 - Cai; Xiuyu ; et al. | 2019-05-16 |
Semiconductor device having fins with in-situ doped, punch-through stopper layer and related methods
Grant 10,290,636 - Liu , et al. | 2019-05-14 |
FinFET including tunable fin height and tunable fin width ratio
Grant 10,276,573 - Cai , et al. | 2019-04-30 |
High doped III-V source/drain junctions for field effect transistors
Grant 10,256,304 - Cai , et al. | 2019-04-09 |
Methods of forming a protection layer on a semiconductor device and the resulting device
Grant 10,249,726 - Xie , et al. | 2019-04-02 |
Semiconductor structure including low-K spacer material
Grant 10,217,869 - Cai , et al. Feb | 2019-02-26 |
Semiconductor device with fins including sidewall recesses
Grant 10,153,371 - Cai , et al. Dec | 2018-12-11 |
Vertical slit transistor with optimized AC performance
Grant 10,134,903 - Liu , et al. November 20, 2 | 2018-11-20 |
Series resistance reduction in vertically stacked silicon nanowire transistors
Grant 10,134,840 - Yeh , et al. November 20, 2 | 2018-11-20 |
Unmerged Epitaxial Process For Finfet Devices With Aggressive Fin Pitch Scaling
App 20180277648 - Cai; Xiuyu ; et al. | 2018-09-27 |
Semiconductor devices having low contact resistance and low current leakage
Grant 10,062,762 - Liu , et al. August 28, 2 | 2018-08-28 |
Semiconductor Structure Including Low-k Spacer Material
App 20180219096 - Cai; Xiuyu ; et al. | 2018-08-02 |
Semiconductor integrated structure having an epitaxial SiGe layer extending from silicon-containing regions formed between segments of oxide regions
Grant 10,032,912 - Morin , et al. July 24, 2 | 2018-07-24 |
Unmerged epitaxial process for FinFET devices with aggressive fin pitch scaling
Grant 10,032,884 - Cai , et al. July 24, 2 | 2018-07-24 |
Method And Structure For Protecting Gates During Epitaxial Growth
App 20180190787 - Cai; Xiuyu ; et al. | 2018-07-05 |
Field effect transistor device spacers
Grant 10,014,299 - Cai , et al. July 3, 2 | 2018-07-03 |
Methods of forming semiconductor device with self-aligned contact elements and the resulting device
Grant 10,014,379 - Xie , et al. July 3, 2 | 2018-07-03 |
Gate structure cut after formation of epitaxial active regions
Grant 10,008,415 - Cai , et al. June 26, 2 | 2018-06-26 |
High Doped Iii-v Source/drain Junctions For Field Effect Transistors
App 20180175202 - Cai; Xiuyu ; et al. | 2018-06-21 |
Replacement low-k spacer
Grant 9,985,135 - Cai , et al. May 29, 2 | 2018-05-29 |
Method and structure for protecting gates during epitaxial growth
Grant 9,941,388 - Cai , et al. April 10, 2 | 2018-04-10 |
High doped III-V source/drain junctions for field effect transistors
Grant 9,935,201 - Cai , et al. April 3, 2 | 2018-04-03 |
Method for making semiconductor device with filled gate line end recesses
Grant 9,935,179 - Cai , et al. April 3, 2 | 2018-04-03 |
Semiconductor Structure Including Low-k Spacer Material
App 20180090327 - Cai; Xiuyu ; et al. | 2018-03-29 |
Method for making a semiconductor device with sidewal spacers for confinig epitaxial growth
Grant 9,929,253 - Cai , et al. March 27, 2 | 2018-03-27 |
Method for making strained semiconductor device and related methods
Grant 9,922,883 - Cai , et al. March 20, 2 | 2018-03-20 |
High doped III-V source/drain junctions for field effect transistors
Grant 9,917,195 - Cai , et al. March 13, 2 | 2018-03-13 |
Replacement low-k spacer
Grant 9,892,926 - Cai , et al. February 13, 2 | 2018-02-13 |
FinFET including tunable fin height and tunable fin width ratio
Grant 9,887,196 - Cai , et al. February 6, 2 | 2018-02-06 |
Hetero-channel FinFET
Grant 9,859,423 - Liu , et al. January 2, 2 | 2018-01-02 |
Buried source-drain contact for integrated circuit transistor devices and method of making same
Grant 9,793,171 - Liu , et al. October 17, 2 | 2017-10-17 |
FinFET semiconductor devices with replacement gate structures
Grant 9,773,867 - Xie , et al. September 26, 2 | 2017-09-26 |
Trench epitaxial growth for a FinFET device having reduced capacitance
Grant 9,755,031 - Liu , et al. September 5, 2 | 2017-09-05 |
Multi-channel gate-all-around FET
Grant 9,748,352 - Liu , et al. August 29, 2 | 2017-08-29 |
Method For Making Semiconductor Device With Filled Gate Line End Recesses
App 20170200812 - CAI; XIUYU ; et al. | 2017-07-13 |
Replacement Low-k Spacer
App 20170194499 - Cai; Xiuyu ; et al. | 2017-07-06 |
Replacement Low-k Spacer
App 20170194153 - Cai; Xiuyu ; et al. | 2017-07-06 |
Methods Of Forming A Protection Layer On A Semiconductor Device And The Resulting Device
App 20170179246 - Xie; Ruilong ; et al. | 2017-06-22 |
High-reliability, low-resistance contacts for nanoscale transistors
Grant 9,685,555 - Liu , et al. June 20, 2 | 2017-06-20 |
Topological method to build self-aligned MTJ without a mask
Grant 9,666,791 - Zhang , et al. May 30, 2 | 2017-05-30 |
Replacement Low-k Spacer
App 20170148894 - Cai; Xiuyu ; et al. | 2017-05-25 |
LDMOS finFET device and method of manufacture using a trench confined epitaxial growth process
Grant 9,660,083 - Liu , et al. May 23, 2 | 2017-05-23 |
Method of forming a reduced resistance fin structure
Grant 9,660,057 - Liu , et al. May 23, 2 | 2017-05-23 |
Replacement low-k spacer
Grant 9,660,050 - Cai , et al. May 23, 2 | 2017-05-23 |
Gate Structure Cut After Formation Of Epitaxial Active Regions
App 20170140994 - Cai; Xiuyu ; et al. | 2017-05-18 |
Method for making semiconductor device with filled gate line end recesses
Grant 9,653,579 - Liu , et al. May 16, 2 | 2017-05-16 |
Unmerged Epitaxial Process For Finfet Devices With Aggressive Fin Pitch Scaling
App 20170117274 - Cai; Xiuyu ; et al. | 2017-04-27 |
Unmerged Epitaxial Process For Finfet Devices With Aggressive Fin Pitch Scaling
App 20170117276 - Cai; Xiuyu ; et al. | 2017-04-27 |
Methods of forming a protection layer on a semiconductor device and the resulting device
Grant 9,634,115 - Xie , et al. April 25, 2 | 2017-04-25 |
Forming reliable contacts on tight semiconductor pitch
Grant 9,634,004 - Cai , et al. April 25, 2 | 2017-04-25 |
Gate structure cut after formation of epitaxial active regions
Grant 9,633,906 - Cai , et al. April 25, 2 | 2017-04-25 |
High Doped Iii-v Source/drain Junctions For Field Effect Transistors
App 20170110583 - Cai; Xiuyu ; et al. | 2017-04-20 |
Self-aligned dielectric isolation for FinFET devices
Grant 9,627,377 - Bergendahl , et al. April 18, 2 | 2017-04-18 |
Forming Replacement Low-k Spacer In Tight Pitch Fin Field Effect Transistors
App 20170104082 - CAI; XIUYU ; et al. | 2017-04-13 |
Forming Replacement Low-k Spacer In Tight Pitch Fin Field Effect Transistors
App 20170103917 - CAI; XIUYU ; et al. | 2017-04-13 |
Semiconductor device with different fin sets
Grant 9,620,505 - Liu , et al. April 11, 2 | 2017-04-11 |
Field Effect Transistor Device Spacers
App 20170092645 - Cai; Xiuyu ; et al. | 2017-03-30 |
Vertical Slit Transistor With Optimized Ac Performance
App 20170077306 - Liu; Qing ; et al. | 2017-03-16 |
Methods Of Forming Semiconductor Device With Self-aligned Contact Elements And The Resulting Device
App 20170077247 - Xie; Ruilong ; et al. | 2017-03-16 |
Forming Reliable Contacts On Tight Semiconductor Pitch
App 20170069627 - Cai; Xiuyu ; et al. | 2017-03-09 |
Asymmetric FinFET semiconductor devices and methods for fabricating the same
Grant 9,583,597 - Cai , et al. February 28, 2 | 2017-02-28 |
Series Resistance Reduction In Vertically Stacked Silicon Nanowire Transistors
App 20170053982 - Cai; Xiuyu ; et al. | 2017-02-23 |
Method and structure of forming controllable unmerged epitaxial material
Grant 9,576,956 - Cai , et al. February 21, 2 | 2017-02-21 |
Recessing RMG metal gate stack for forming self-aligned contact
Grant 9,570,583 - Cai , et al. February 14, 2 | 2017-02-14 |
Forming reliable contacts on tight semiconductor pitch
Grant 9,564,358 - Cai , et al. February 7, 2 | 2017-02-07 |
Reduced trench profile for a gate
Grant 9,564,501 - Liu , et al. February 7, 2 | 2017-02-07 |
High Doped Iii-v Source/drain Junctions For Field Effect Transistors
App 20170033221 - Cai; Xiuyu ; et al. | 2017-02-02 |
High Doped Iii-v Source/drain Junctions For Field Effect Transistors
App 20170033197 - Cai; Xiuyu ; et al. | 2017-02-02 |
Gate structure cut after formation of epitaxial active regions
Grant 9,559,009 - Cai , et al. January 31, 2 | 2017-01-31 |
Dual channel finFET with relaxed pFET region
Grant 9,559,018 - Cai , et al. January 31, 2 | 2017-01-31 |
Method And Structure Of Forming Controllable Unmerged Epitaxial Material
App 20170012042 - Cai; Xiuyu ; et al. | 2017-01-12 |
Large Area Contacts For Small Transistors
App 20170012130 - CAI; Xiuyu ; et al. | 2017-01-12 |
Semiconductor devices with self-aligned contacts and low-k spacers
Grant 9,543,426 - Xie , et al. January 10, 2 | 2017-01-10 |
Methods of forming different spacer structures on integrated circuit products having differing gate pitch dimensions and the resulting products
Grant 9,536,877 - Cai , et al. January 3, 2 | 2017-01-03 |
Field effect transistor device spacers
Grant 9,536,981 - Cai , et al. January 3, 2 | 2017-01-03 |
MIS (Metal-Insulator-Semiconductor) contact structures for semiconductor devices
Grant 9,536,836 - Xie , et al. January 3, 2 | 2017-01-03 |
Methods of forming different FinFET devices having different fin heights and an integrated circuit product containing such devices
Grant 9,530,775 - Cai , et al. December 27, 2 | 2016-12-27 |
Recessing Rmg Metal Gate Stack For Forming Self-aligned Contact
App 20160372576 - Cai; Xiuyu ; et al. | 2016-12-22 |
Dual Channel Finfet With Relaxed Pfet Region
App 20160372493 - Cai; Xiuyu ; et al. | 2016-12-22 |
Series Resistance Reduction In Vertically Stacked Silicon Nanowire Transistors
App 20160365411 - Yeh; Chun-Chen ; et al. | 2016-12-15 |
Vertical slit transistor with optimized AC performance
Grant 9,515,180 - Liu , et al. December 6, 2 | 2016-12-06 |
Multi-channel gate-all-around FET
Grant 9,502,518 - Liu , et al. November 22, 2 | 2016-11-22 |
Semiconductor devices with dummy gate structures partially on isolation regions
Grant 9,496,354 - Xie , et al. November 15, 2 | 2016-11-15 |
Dual channel finFET with relaxed pFET region
Grant 9,496,185 - Cai , et al. November 15, 2 | 2016-11-15 |
Methods of forming replacement gate structures on finFET devices and the resulting devices
Grant 9,478,634 - Xie , et al. October 25, 2 | 2016-10-25 |
Methods of forming a FinFET semiconductor device with a unique gate configuration, and the resulting FinFET device
Grant 9,472,446 - Xie , et al. October 18, 2 | 2016-10-18 |
Large area contacts for small transistors
Grant 9,466,722 - Liu , et al. October 11, 2 | 2016-10-11 |
Finfets Having Strained Channels, And Methods Of Fabricating Finfets Having Strained Channels
App 20160293761 - Liu; Qing ; et al. | 2016-10-06 |
Finfet Semiconductor Devices With Stressed Channel Regions
App 20160293706 - Cai; Xiuyu ; et al. | 2016-10-06 |
Method For Making Strained Semiconductor Device And Related Methods
App 20160293494 - Cai; Xiuyu ; et al. | 2016-10-06 |
Macro to monitor n-p bump
Grant 9,460,969 - Cai , et al. October 4, 2 | 2016-10-04 |
Buried Source-drain Contact For Integrated Circuit Transistor Devices And Method Of Making Same
App 20160284599 - Liu; Qing ; et al. | 2016-09-29 |
Dual Channel Finfet With Relaxed Pfet Region
App 20160284607 - Cai; Xiuyu ; et al. | 2016-09-29 |
Macro To Monitor N-p Bump
App 20160284602 - Cai; Xiuyu ; et al. | 2016-09-29 |
Method For Making A Semiconductor Device With Sidewal Spacers For Confinig Epitaxial Growth
App 20160284822 - Cai; Xiuyu ; et al. | 2016-09-29 |
Method and structure of forming controllable unmerged epitaxial material
Grant 9,455,331 - Cai , et al. September 27, 2 | 2016-09-27 |
Recessing RMG metal gate stack for forming self-aligned contact
Grant 9,455,330 - Cai , et al. September 27, 2 | 2016-09-27 |
Mis (metal-insulator-semiconductor) Contact Structures For Semiconductor Devices
App 20160276275 - Xie; Ruilong ; et al. | 2016-09-22 |
Finfet Including Tunable Fin Height And Tunable Fin Width Ratio
App 20160276348 - Cai; Xiuyu ; et al. | 2016-09-22 |
Semiconductor Devices Having Fins, And Methods Of Forming Semiconductor Devices Having Fins
App 20160260741 - Liu; Qing ; et al. | 2016-09-08 |
Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
Grant 9,437,711 - Cai , et al. September 6, 2 | 2016-09-06 |
Dual-strained nanowire and FinFET devices with dielectric isolation
Grant 9,431,539 - Qi , et al. August 30, 2 | 2016-08-30 |
Method for making a semiconductor device with sidewall spacers for confining epitaxial growth
Grant 9,431,540 - Liu , et al. August 30, 2 | 2016-08-30 |
Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same
Grant 9,425,319 - Cai , et al. August 23, 2 | 2016-08-23 |
Semiconductor device with low-K spacers
Grant 9,425,280 - Cai , et al. August 23, 2 | 2016-08-23 |
Field effect transistor device spacers
Grant 9,425,292 - Cai , et al. August 23, 2 | 2016-08-23 |
Stress memorization film and oxide isolation in fins
Grant 9,419,137 - Bello , et al. August 16, 2 | 2016-08-16 |
Method for making strained semiconductor device and related methods
Grant 9,406,751 - Liu , et al. August 2, 2 | 2016-08-02 |
Methods of forming MIS contact structures for semiconductor devices and the resulting devices
Grant 9,390,939 - Xie , et al. July 12, 2 | 2016-07-12 |
FinFETs having strained channels, and methods of fabricating finFETs having strained channels
Grant 9,391,200 - Liu , et al. July 12, 2 | 2016-07-12 |
Semiconductor Device With Different Fin Sets
App 20160197072 - Liu; Qing ; et al. | 2016-07-07 |
Buried source-drain contact for integrated circuit transistor devices and method of making same
Grant 9,385,201 - Liu , et al. July 5, 2 | 2016-07-05 |
Large Area Contacts For Small Transistors
App 20160190322 - LIU; Qing ; et al. | 2016-06-30 |
Defect-free Strain Relaxed Buffer Layer
App 20160190304 - MORIN; Pierre ; et al. | 2016-06-30 |
Hetero-channel Finfet
App 20160190317 - LIU; Qing ; et al. | 2016-06-30 |
Vertical Slit Transistor With Optimized Ac Performance
App 20160190314 - Liu; Qing ; et al. | 2016-06-30 |
High-reliability, Low-resistance Contacts For Nanoscale Transistors
App 20160190325 - LIU; Qing ; et al. | 2016-06-30 |
Selectively forming a protective conductive cap on a metal gate electrode
Grant 9,379,209 - Cai , et al. June 28, 2 | 2016-06-28 |
Trench Epitaxial Growth For A Finfet Device Having Reduced Capacitance
App 20160181381 - Liu; Qing ; et al. | 2016-06-23 |
Reduced Trench Profile For A Gate
App 20160181384 - LIU; Qing ; et al. | 2016-06-23 |
Semiconductor Devices Having Low Contact Resistance And Low Current Leakage
App 20160181390 - LIU; Qing ; et al. | 2016-06-23 |
Integrated circuits and methods for fabricating integrated circuits with improved contact structures
Grant 9,373,542 - Zhang , et al. June 21, 2 | 2016-06-21 |
Ldmos Finfet Device And Method Of Manufacture Using A Trench Confined Epitaxial Growth Process
App 20160163850 - Liu; Qing ; et al. | 2016-06-09 |
Recessing Rmg Metal Gate Stack For Forming Self-aligned Contact
App 20160149015 - Cai; Xiuyu ; et al. | 2016-05-26 |
Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device
Grant 9,349,840 - Cai , et al. May 24, 2 | 2016-05-24 |
Topological Method To Build Self-aligned Mtj Without A Mask
App 20160141489 - ZHANG; Xunyuan ; et al. | 2016-05-19 |
Selectively Forming A Protective Conductive Cap On A Metal Gate Electrode
App 20160133721 - Cai; Xiuyu ; et al. | 2016-05-12 |
Methods Of Forming Replacement Gate Structures On Finfet Devices And The Resulting Devices
App 20160133719 - Xie; Ruilong ; et al. | 2016-05-12 |
Methods of forming fins for finFET semiconductor devices and the selective removal of such fins
Grant 9,337,050 - Xie , et al. May 10, 2 | 2016-05-10 |
Multi-channel Gate-all-around Fet
App 20160111513 - Liu; Qing ; et al. | 2016-04-21 |
Method for making a semiconductor device while avoiding nodules on a gate
Grant 9,318,579 - Liu , et al. April 19, 2 | 2016-04-19 |
Dual-strained Nanowire And Finfet Devices With Dielectric Isolation
App 20160104799 - QI; Yi ; et al. | 2016-04-14 |
Uniformly doped leakage current stopper to counter under channel leakage currents in bulk FinFET devices
Grant 9,306,001 - Cai , et al. April 5, 2 | 2016-04-05 |
Finfet Semiconductor Devices With Replacement Gate Structures
App 20160093692 - Xie; Ruilong ; et al. | 2016-03-31 |
Semiconductor Devices With Replacement Gate Structures
App 20160093713 - Xie; Ruilong ; et al. | 2016-03-31 |
Method for making semiconductor device with different fin sets
Grant 9,299,721 - Liu , et al. March 29, 2 | 2016-03-29 |
Method for single fin cuts using selective ion implants
Grant 9,287,130 - Cai , et al. March 15, 2 | 2016-03-15 |
Method for making semiconductor device with isolation pillars between adjacent semiconductor fins
Grant 9,281,382 - Liu , et al. March 8, 2 | 2016-03-08 |
FinFET semiconductor device with a recessed liner that defines a fin height of the FinFet device
Grant 9,269,815 - Cai , et al. February 23, 2 | 2016-02-23 |
Integrated circuits having gate cap protection and methods of forming the same
Grant 9,269,611 - Pham , et al. February 23, 2 | 2016-02-23 |
Methods Of Forming Mis Contact Structures For Semiconductor Devices By Selective Deposition Of Insulating Material And The Resulting Devices
App 20160049370 - Kamineni; Vimal ; et al. | 2016-02-18 |
Methods of forming a semiconductor device with a protected gate cap layer and the resulting device
Grant 9,263,537 - Pham , et al. February 16, 2 | 2016-02-16 |
Semiconductor device including vertically spaced semiconductor channel structures and related methods
Grant 9,263,338 - Liu , et al. February 16, 2 | 2016-02-16 |
Methods Of Forming Stressed Channel Regions For A Finfet Semiconductor Device And The Resulting Device
App 20160035863 - Cai; Xiuyu ; et al. | 2016-02-04 |
Gate Structure Cut After Formation Of Epitaxial Active Regions
App 20160027700 - Cai; Xiuyu ; et al. | 2016-01-28 |
FinFET semiconductor devices with local isolation features and methods for fabricating the same
Grant 9,245,979 - Cai , et al. January 26, 2 | 2016-01-26 |
Methods of forming finFET semiconductor devices using a replacement gate technique and the resulting devices
Grant 9,236,480 - Xie , et al. January 12, 2 | 2016-01-12 |
Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
Grant 9,236,258 - Xie , et al. January 12, 2 | 2016-01-12 |
Magnetic tunnel junction between metal layers of a semiconductor device
Grant 9,236,557 - Zhang , et al. January 12, 2 | 2016-01-12 |
Integrated Circuit Product With A Gate Height Registration Structure
App 20160005733 - Xie; Ruilong ; et al. | 2016-01-07 |
Methods of forming spacers on FinFETs and other semiconductor devices
Grant 9,231,051 - Cai , et al. January 5, 2 | 2016-01-05 |
Structure And Method Of Forming Silicide On Fins
App 20150380510 - Zhang; Xunyuan ; et al. | 2015-12-31 |
Method For Controlling Height Of A Fin Structure
App 20150380258 - Liu; Qing ; et al. | 2015-12-31 |
Semiconductor Devices Having Fins, And Methods Of Forming Semiconductor Devices Having Fins
App 20150372107 - Liu; Qing ; et al. | 2015-12-24 |
Method And Structure For Protecting Gates During Epitaxial Growth
App 20150372108 - Cai; Xiuyu ; et al. | 2015-12-24 |
Multi-channel Gate-all-around Fet
App 20150372104 - Liu; Qing ; et al. | 2015-12-24 |
Methods Of Forming A Finfet Semiconductor Device With A Unique Gate Configuration, And The Resulting Finfet Device
App 20150371892 - Xie; Ruilong ; et al. | 2015-12-24 |
Finfets Having Strained Channels, And Methods Of Fabricating Finfets Having Strained Channels
App 20150372140 - Liu; Qing ; et al. | 2015-12-24 |
Methods Of Forming A Protection Layer On A Semiconductor Device And The Resulting Device
App 20150364326 - Xie; Ruilong ; et al. | 2015-12-17 |
Method Of Forming A Reduced Resistance Fin Structure
App 20150364578 - Liu; Qing ; et al. | 2015-12-17 |
Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device
Grant 9,214,553 - Cai , et al. December 15, 2 | 2015-12-15 |
Method For Making A Semiconductor Device While Avoiding Nodules On A Gate
App 20150357441 - Liu; Qing ; et al. | 2015-12-10 |
Method For Making Semiconductor Device With Isolation Pillars Between Adjacent Semiconductor Fins
App 20150357439 - LIU; Qing ; et al. | 2015-12-10 |
Buried Source-drain Contact For Integrated Circuit Transistor Devices And Method Of Making Same
App 20150357425 - Liu; Qing ; et al. | 2015-12-10 |
Semiconductor Devices And Methods For Forming A Gate With Reduced Defects
App 20150348787 - CAI; Xiuyu | 2015-12-03 |
Method For Making A Semiconductor Device With Sidewall Spacers For Confining Epitaxial Growth
App 20150349085 - LIU; Qing ; et al. | 2015-12-03 |
Methods Of Forming Mis Contact Structures For Semiconductor Devices And The Resulting Devices
App 20150349083 - Xie; Ruilong ; et al. | 2015-12-03 |
FinFETs and techniques for controlling source and drain junction profiles in finFETs
Grant 9,202,919 - Liu , et al. December 1, 2 | 2015-12-01 |
Methods for forming vertical and sharp junctions in finFET structures
Grant 9,202,920 - Liu , et al. December 1, 2 | 2015-12-01 |
Integrated circuits with improved gate uniformity and methods for fabricating same
Grant 9,196,696 - Xie , et al. November 24, 2 | 2015-11-24 |
Method For Making Semiconductor Device With Filled Gate Line End Recesses
App 20150333155 - LIU; Qing ; et al. | 2015-11-19 |
Semiconductor Devices With Replacement Spacer Structures
App 20150333136 - Xie; Ruilong ; et al. | 2015-11-19 |
Method For Making Semiconductor Device With Different Fin Sets
App 20150333086 - LIU; Qing ; et al. | 2015-11-19 |
Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance
Grant 9,190,486 - Xie , et al. November 17, 2 | 2015-11-17 |
Prevention of fin erosion for semiconductor devices
Grant 9,190,487 - Khakifirooz , et al. November 17, 2 | 2015-11-17 |
Topological method to build self-aligned MTJ without a mask
Grant 9,190,260 - Zhang , et al. November 17, 2 | 2015-11-17 |
FinFET integrated circuits and methods for their fabrication
Grant 9,184,162 - Akarvardar , et al. November 10, 2 | 2015-11-10 |
Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
Grant 9,184,263 - Cai , et al. November 10, 2 | 2015-11-10 |
Methods Of Forming Gate Structures For Semiconductor Devices Using A Replacement Gate Technique And The Resulting Devices
App 20150311081 - Xie; Ruilong ; et al. | 2015-10-29 |
Finfet Device Comprising A Thermal Oxide Region Positioned Between A Portion Of The Fin And A Layer Of Insulating Material
App 20150311337 - Cai; Xiuyu ; et al. | 2015-10-29 |
Methods of forming replacement gate structures using a gate height register process to improve gate height uniformity and the resulting integrated circuit products
Grant 9,165,836 - Xie , et al. October 20, 2 | 2015-10-20 |
Structure and method of forming silicide on fins
Grant 9,159,617 - Zhang , et al. October 13, 2 | 2015-10-13 |
Finfet Including Tunable Fin Height And Tunable Fin Width Ratio
App 20150287648 - Cai; Xiuyu ; et al. | 2015-10-08 |
Methods of forming semiconductor device with self-aligned contact elements and the resulting devices
Grant 9,153,498 - Xie , et al. October 6, 2 | 2015-10-06 |
Methods Of Forming A Finfet Semiconductor Device So As To Reduce Punch-through Leakage Currents And The Resulting Device
App 20150279963 - Xie; Ruilong ; et al. | 2015-10-01 |
Finfet Devices With Different Fin Heights In The Channel And Source/drain Regions
App 20150279999 - Xie; Ruilong ; et al. | 2015-10-01 |
Methods Of Forming Replacement Gate Structures Using A Gate Height Register Process To Improve Gate Height Uniformity And The Resulting Integrated Circuit Products
App 20150279742 - Xie; Ruilong ; et al. | 2015-10-01 |
Methods of forming replacement spacer structures on semiconductor devices
Grant 9,147,748 - Xie , et al. September 29, 2 | 2015-09-29 |
Methods of forming a FinFET semiconductor device so as to reduce punch-through leakage currents and the resulting device
Grant 9,142,651 - Xie , et al. September 22, 2 | 2015-09-22 |
Semiconductor Device With Self-aligned Contact Elements
App 20150263160 - Xie; Ruilong ; et al. | 2015-09-17 |
Methods Of Forming Stressed Channel Regions For A Finfet Semiconductor Device And The Resulting Device
App 20150255608 - Cai; Xiuyu ; et al. | 2015-09-10 |
Semiconductor Device With Low-k Spacers
App 20150255561 - Cai; Xiuyu ; et al. | 2015-09-10 |
Methods Of Forming Stressed Channel Regions For A Finfet Semiconductor Device And The Resulting Device
App 20150255542 - Cai; Xiuyu ; et al. | 2015-09-10 |
Replacement low-K spacer
Grant 9,129,987 - Wan , et al. September 8, 2 | 2015-09-08 |
Methods Of Forming Different Spacer Structures On Integrated Circuit Products Having Differing Gate Pitch Dimensions And The Resulting Products
App 20150249036 - Cai; Xiuyu ; et al. | 2015-09-03 |
Cmos Structure Having Low Resistance Contacts And Fabrication Method
App 20150243660 - LIU; Qing ; et al. | 2015-08-27 |
Cap Layers For Semiconductor Devices With Self-aligned Contact Elements
App 20150243604 - Xie; Ruilong ; et al. | 2015-08-27 |
Methods of forming replacement gate structures for semiconductor devices and the resulting semiconductor products
Grant 9,117,908 - Xie , et al. August 25, 2 | 2015-08-25 |
Methods of forming a dielectric cap layer on a metal gate structure
Grant 9,117,877 - Cai , et al. August 25, 2 | 2015-08-25 |
Method For Making Semiconductor Device With Stressed Semiconductor And Related Devices
App 20150228781 - CAI; Xiuyu ; et al. | 2015-08-13 |
Gate Structure Cut After Formation Of Epitaxial Active Regions
App 20150214219 - Cai; Xiuyu ; et al. | 2015-07-30 |
Structure And Method Of Forming Silicide On Fins
App 20150214105 - Zhang; Xunyuan ; et al. | 2015-07-30 |
Replacement Low-k Spacer
App 20150214330 - WAN; Jing ; et al. | 2015-07-30 |
Achieving greater planarity between upper surfaces of a layer and a conductive structure residing therein
Grant 9,093,401 - Zhang , et al. July 28, 2 | 2015-07-28 |
Integrated Circuits Having Gate Cap Protection And Methods Of Forming The Same
App 20150206844 - Pham; Daniel Thanh Khae ; et al. | 2015-07-23 |
Magnetic Tunnel Junction Between Metal Layers Of A Semiconductor Device
App 20150200353 - Zhang; Xunyuan ; et al. | 2015-07-16 |
LDMOS FinFET device using a long channel region and method of manufacture
Grant 9,082,852 - Liu , et al. July 14, 2 | 2015-07-14 |
Method and device for self-aligned contact on a non-recessed metal gate
Grant 9,076,816 - Zhang , et al. July 7, 2 | 2015-07-07 |
Methods Of Forming Gate Structures For Semiconductor Devices Using A Replacement Gate Technique And The Resulting Devices
App 20150187905 - Cai; Xiuyu ; et al. | 2015-07-02 |
Methods of forming cap layers for semiconductor devices with self-aligned contact elements and the resulting devices
Grant 9,070,711 - Xie , et al. June 30, 2 | 2015-06-30 |
FinFet integrated circuits with uniform fin height and methods for fabricating the same
Grant 9,070,742 - Xie , et al. June 30, 2 | 2015-06-30 |
Finfet Integrated Circuits And Methods For Their Fabrication
App 20150179644 - Akarvardar; Murat Kerem ; et al. | 2015-06-25 |
Methods of forming a semiconductor device with low-k spacers and the resulting device
Grant 9,064,948 - Cai , et al. June 23, 2 | 2015-06-23 |
Methods of forming isolation material on FinFET semiconductor devices and the resulting devices
Grant 9,064,890 - Xie , et al. June 23, 2 | 2015-06-23 |
Selective Growth of a Work-Function Metal in a Replacement Metal Gate of a Semiconductor Device
App 20150171086 - Cai; Xiuyu ; et al. | 2015-06-18 |
Methods Of Forming Replacement Gate Structures For Semiconductor Devices And The Resulting Semiconductor Products
App 20150171216 - Xie; Ruilong ; et al. | 2015-06-18 |
Methods Of Forming Spacers On Finfets And Other Semiconductor Devices
App 20150145071 - Cai; Xiuyu ; et al. | 2015-05-28 |
Method And Device For Self-aligned Contact On A Non-recessed Metal Gate
App 20150137273 - ZHANG; Xunyuan ; et al. | 2015-05-21 |
Methods Of Forming Gate Structures For Semiconductor Devices Using A Replacement Gate Technique And The Resulting Devices
App 20150137271 - Cai; Xiuyu ; et al. | 2015-05-21 |
Integrated Circuits And Methods For Fabricating Integrated Circuits With Improved Contact Structures
App 20150137373 - Zhang; Xunyuan ; et al. | 2015-05-21 |
Semiconductor devices and methods of fabrication with reduced gate and contact resistances
Grant 9,029,920 - Xie , et al. May 12, 2 | 2015-05-12 |
Selective growth of a work-function metal in a replacement metal gate of a semiconductor device
Grant 9,018,711 - Cai , et al. April 28, 2 | 2015-04-28 |
Selective Growth Of A Work-function Metal In A Replacement Metal Gate Of A Semiconductor Device
App 20150108577 - Cai; Xiuyu ; et al. | 2015-04-23 |
Semiconductor Device Including Vertically Spaced Semiconductor Channel Structures And Related Methods
App 20150108573 - Liu; Qing ; et al. | 2015-04-23 |
Integrated Circuits Including Finfet Devices With Lower Contact Resistance And Reduced Parasitic Capacitance And Methods For Fabricating The Same
App 20150102422 - Cai; Xiuyu ; et al. | 2015-04-16 |
Semiconductor Device Including Stress Layer Adjacent Channel And Related Methods
App 20150102410 - LIU; QING ; et al. | 2015-04-16 |
FinFET devices having recessed liner materials to define different fin heights
Grant 9,000,537 - Cai , et al. April 7, 2 | 2015-04-07 |
Methods Of Forming Finfet Semiconductor Devices Using A Replacement Gate Technique And The Resulting Devices
App 20150091100 - Xie; Ruilong ; et al. | 2015-04-02 |
FinFET integrated circuits and methods for their fabrication
Grant 8,987,094 - Akarvardar , et al. March 24, 2 | 2015-03-24 |
Self-aligned Dielectric Isolation For Finfet Devices
App 20150061040 - Bergendahl; Marc Adam ; et al. | 2015-03-05 |
Methods of forming spacers on FinFETs and other semiconductor devices
Grant 8,962,413 - Cai , et al. February 24, 2 | 2015-02-24 |
Methods Of Forming A Semiconductor Device With A Protected Gate Cap Layer And The Resulting Device
App 20150041869 - Pham; Daniel ; et al. | 2015-02-12 |
Methods Of Forming Spacers On Finfets And Other Semiconductor Devices
App 20150044855 - Cai; Xiuyu ; et al. | 2015-02-12 |
Methods Of Forming Cap Layers For Semiconductor Devices With Self-aligned Contact Elements And The Resulting Devices
App 20150035086 - Xie; Ruilong ; et al. | 2015-02-05 |
Methods of forming semiconductor device with self-aligned contact elements and the resulting devices
Grant 8,946,075 - Cai , et al. February 3, 2 | 2015-02-03 |
Integrated circuits having replacement gate structures and methods for fabricating the same
Grant 8,946,793 - Xie , et al. February 3, 2 | 2015-02-03 |
Self-aligned dielectric isolation for FinFET devices
Grant 8,941,156 - Bergendahl , et al. January 27, 2 | 2015-01-27 |
Methods of forming semiconductor device with self-aligned contact elements and the resulting devices
Grant 8,940,633 - Cai , et al. January 27, 2 | 2015-01-27 |
Methods Of Forming Semiconductor Device With Self-aligned Contact Elements And The Resulting Devices
App 20150021683 - Xie; Ruilong ; et al. | 2015-01-22 |
Semiconductor devices having improved gate height uniformity and methods for fabricating same
Grant 8,936,979 - Xie , et al. January 20, 2 | 2015-01-20 |
Finfet Integrated Circuits And Methods For Their Fabrication
App 20150014776 - Akarvardar; Murat Kerem ; et al. | 2015-01-15 |
Methods of forming semiconductor device with self-aligned contact elements and the resulting device
Grant 8,928,048 - Xie , et al. January 6, 2 | 2015-01-06 |
Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same
Grant 8,921,191 - Cai , et al. December 30, 2 | 2014-12-30 |
Methods Of Forming Different Finfet Devices Having Different Fin Heights And An Integrated Circuit Product Containing Such Devices
App 20140367795 - Cai; Xiuyu ; et al. | 2014-12-18 |
Achieving Greater Planarity Between Upper Surfaces Of A Layer And A Conductive Structure Residing Therein
App 20140370705 - ZHANG; Xunyuan ; et al. | 2014-12-18 |
Methods of forming a semiconductor device with a protected gate cap layer and the resulting device
Grant 8,906,754 - Pham , et al. December 9, 2 | 2014-12-09 |
Methods Of Forming Conductive Structures Using A Sacrificial Material During A Metal Hard Mask Removal Process
App 20140357079 - Tanwar; Kunaljeet ; et al. | 2014-12-04 |
Semiconductor Devices And Methods Of Fabrication With Reduced Gate And Contact Resistances
App 20140353734 - XIE; Ruilong ; et al. | 2014-12-04 |
Methods Of Forming Conductive Structures Using A Sacrificial Material During An Etching Process That Is Performed To Remove A Metal Hard Mask
App 20140357078 - Zhang; Xunyuan ; et al. | 2014-12-04 |
Methods of forming spacers on FinFETs and other semiconductor devices
Grant 8,900,941 - Cai , et al. December 2, 2 | 2014-12-02 |
Finfet Semiconductor Devices With Local Isolation Features And Methods For Fabricating The Same
App 20140346599 - Cai; Xiuyu ; et al. | 2014-11-27 |
Asymmetric Finfet Semiconductor Devices And Methods For Fabricating The Same
App 20140346574 - Cai; Xiuyu ; et al. | 2014-11-27 |
Methods of forming conductive structures using a sacrificial material during a metal hard mask removal process
Grant 8,883,631 - Tanwar , et al. November 11, 2 | 2014-11-11 |
Achieving greater planarity between upper surfaces of a layer and a conductive structure residing therein
Grant 8,883,020 - Zhang , et al. November 11, 2 | 2014-11-11 |
Facilitating gate height uniformity and inter-layer dielectric protection
Grant 8,883,623 - Xie , et al. November 11, 2 | 2014-11-11 |
Finfet Device With An Etch Stop Layer Positioned Between A Gate Structure And A Local Isolation Material
App 20140327090 - Cai; Xiuyu ; et al. | 2014-11-06 |
Finfet Devices Having Recessed Liner Materials To Define Different Fin Heights
App 20140327089 - Cai; Xiuyu ; et al. | 2014-11-06 |
Finfet Semiconductor Device With A Recessed Liner That Defines A Fin Height Of The Finfet Device
App 20140327088 - Cai; Xiuyu ; et al. | 2014-11-06 |
Methods of forming a semiconductor device with a protected gate cap layer and the resulting device
Grant 8,871,582 - Pham , et al. October 28, 2 | 2014-10-28 |
Methods Of Forming Isolation Regions For Bulk Finfet Semiconductor Devices
App 20140315371 - Cai; Xiuyu ; et al. | 2014-10-23 |
Methods of forming 3-D semiconductor devices using a replacement gate technique and a novel 3-D device
Grant 8,846,477 - Cai , et al. September 30, 2 | 2014-09-30 |
Methods of increasing space for contact elements by using a sacrificial liner and the resulting device
Grant 8,841,711 - Cai , et al. September 23, 2 | 2014-09-23 |
Methods Of Increasing Space For Contact Elements By Using A Sacrificial Liner And The Resulting Device
App 20140264479 - Cai; Xiuyu ; et al. | 2014-09-18 |
Methods Of Forming A Semiconductor Device With A Protected Gate Cap Layer And The Resulting Device
App 20140264486 - Pham; Daniel ; et al. | 2014-09-18 |
Methods Of Forming A Semiconductor Device With A Protected Gate Cap Layer And The Resulting Device
App 20140264487 - Pham; Daniel ; et al. | 2014-09-18 |
Methods of forming bulk FinFET devices by performing a recessing process on liner materials to define different fin heights and FinFET devices with such recessed liner materials
Grant 8,835,262 - Cai , et al. September 16, 2 | 2014-09-16 |
Prevention Of Fin Erosion For Semiconductor Devices
App 20140256106 - Khakifirooz; Ali ; et al. | 2014-09-11 |
Methods Of Forming Semiconductor Device With Self-aligned Contact Elements And The Resulting Devices
App 20140252424 - Cai; Xiuyu ; et al. | 2014-09-11 |
Methods Of Forming Semiconductor Device With Self-aligned Contact Elements And The Resulting Devices
App 20140252425 - Cai; Xiuyu ; et al. | 2014-09-11 |
Methods of forming bulk FinFET semiconductor devices by performing a liner recessing process to define fin heights and FinFET devices with such a recessed liner
Grant 8,815,742 - Cai , et al. August 26, 2 | 2014-08-26 |
Integrated Circuits With Improved Gate Uniformity And Methods For Fabricating Same
App 20140231920 - Xie; Ruilong ; et al. | 2014-08-21 |
Prevention of fin erosion for semiconductor devices
Grant 8,809,920 - Khakifirooz , et al. August 19, 2 | 2014-08-19 |
Integrated Circuits Including Finfet Devices With Lower Contact Resistance And Reduced Parasitic Capacitance And Methods For Fabricating The Same
App 20140217517 - Cai; Xiuyu ; et al. | 2014-08-07 |
Integrated Circuits Having Replacement Gate Structures And Methods For Fabricating The Same
App 20140217482 - Xie; Ruilong ; et al. | 2014-08-07 |
Achieving Greater Planarity Between Upper Surfaces Of A Layer And A Conductive Structure Residing Therein
App 20140209563 - ZHANG; Xunyuan ; et al. | 2014-07-31 |
Finfet Integrated Circuits With Uniform Fin Height And Methods For Fabricating The Same
App 20140203376 - Xie; Ruilong ; et al. | 2014-07-24 |
Methods Of Forming Semiconductor Device With Self-aligned Contact Elements And The Resulting Device
App 20140197468 - Xie; Ruilong ; et al. | 2014-07-17 |
Self-aligned Dielectric Isolation For Finfet Devices
App 20140191296 - Bergendahl; Marc Adam ; et al. | 2014-07-10 |
Methods Of Forming Bulk Finfet Devices By Performing A Recessing Process On Liner Materials To Define Different Fin Heights And Finfet Devices With Such Recessed Liner Materials
App 20140191324 - Cai; Xiuyu ; et al. | 2014-07-10 |
Methods of forming semiconductor devices with self-aligned contacts and the resulting devices
Grant 8,753,970 - Xie , et al. June 17, 2 | 2014-06-17 |
Methods Of Forming Bulk Finfet Semiconductor Devices By Performing A Liner Recessing Process To Define Fin Heights And Finfet Devices With Such A Recessed Liner
App 20140159171 - Cai; Xiuyu ; et al. | 2014-06-12 |
Integrated circuits with improved gate uniformity and methods for fabricating same
Grant 8,748,309 - Xie , et al. June 10, 2 | 2014-06-10 |
Integrated circuit having a replacement gate structure and method for fabricating the same
Grant 8,735,272 - Cai , et al. May 27, 2 | 2014-05-27 |
Integrated Circuits And Methods For Fabricating Integrated Circuits With Reduced Parasitic Capacitance
App 20140138779 - Xie; Ruilong ; et al. | 2014-05-22 |
Prevention Of Fin Erosion For Semiconductor Devices
App 20140124840 - Khakifirooz; Ali ; et al. | 2014-05-08 |
Methods Of Forming A Semiconductor Device With Low-k Spacers And The Resulting Device
App 20140110798 - Cai; Xiuyu ; et al. | 2014-04-24 |
Facilitating Gate Height Uniformity And Inter-layer Dielectric Protection
App 20140110794 - XIE; Ruilong ; et al. | 2014-04-24 |
Methods of removing dummy fin structures when forming finFET devices
Grant 8,703,557 - Cai , et al. April 22, 2 | 2014-04-22 |
Methods for forming an integrated circuit with straightened recess profile
Grant 8,691,696 - Cai , et al. April 8, 2 | 2014-04-08 |
Methods Of Forming 3-d Semiconductor Devices Using A Replacement Gate Technique And A Novel 3-d Device
App 20140084383 - Cai; Xiuyu ; et al. | 2014-03-27 |
Integrated Circuits With Improved Gate Uniformity And Methods For Fabricating Same
App 20140077274 - Xie; Ruilong ; et al. | 2014-03-20 |
Methods Of Forming Semiconductor Devices With Self-aligned Contacts And The Resulting Devices
App 20140070285 - Xie; Ruilong ; et al. | 2014-03-13 |
Semiconductor Devices With Self-aligned Contacts And Low-k Spacers
App 20140042502 - Xie; Ruilong ; et al. | 2014-02-13 |
Integrated Circuit Having A Replacement Gate Structure And Method For Fabricating The Same
App 20140035010 - Cai; Xiuyu ; et al. | 2014-02-06 |
Semiconductor Devices Having Improved Gate Height Uniformity And Methods For Fabricating Same
App 20130328112 - Xie; Ruilong ; et al. | 2013-12-12 |
Methods For Forming An Integrated Circuit With Straightened Recess Profile
App 20130309868 - Cai; Xiuyu ; et al. | 2013-11-21 |
Methods of forming 3-D semiconductor devices with a nanowire gate structure wherein the nanowire gate structure is formed prior to source/drain formation
Grant 8,580,634 - Xie , et al. November 12, 2 | 2013-11-12 |
Methods Of Forming Spacers On Finfets And Other Semiconductor Devices
App 20130292805 - CAI; Xiuyu ; et al. | 2013-11-07 |
Methods of forming CMOS semiconductor devices
Grant 8,551,843 - Cai , et al. October 8, 2 | 2013-10-08 |
Methods of Forming Replacement Gate Structures for Semiconductor Devices
App 20130187236 - Xie; Ruilong ; et al. | 2013-07-25 |
Methods of Forming a Dielectric Cap Layer on a Metal Gate Structure
App 20130181263 - Cai; Xiuyu ; et al. | 2013-07-18 |
Chemical Vapor Deposition Improvements Through Radical-component Modification
App 20110159213 - Cai; Xiuyu ; et al. | 2011-06-30 |
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