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name:-0.0060808658599854
name:-0.0034890174865723
name:-0.0032150745391846
Byun; Gwang-Seon Patent Filings

Byun; Gwang-Seon

Patent Applications and Registrations

Patent applications and USPTO patent grants for Byun; Gwang-Seon.The latest application filed is for "method of analyzing lattice strain of semiconductor device".

Company Profile
1.3.4
  • Byun; Gwang-Seon - Yongin-si KR
  • Byun; Gwang-Seon - Gyeonggi-do KR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method of analyzing lattice strain of semiconductor device
Grant 10,410,332 - Ahn , et al. Sept
2019-09-10
Method Of Analyzing Lattice Strain Of Semiconductor Device
App 20180012348 - AHN; MYOUNG-KI ;   et al.
2018-01-11
Fuse box, method of forming a fuse box, and fuse cutting method
Grant 7,576,408 - Byun , et al. August 18, 2
2009-08-18
Integrated circuit devices having corrosion resistant fuse regions and methods of fabricating the same
App 20070114635 - Cho; Tai-Heui ;   et al.
2007-05-24
Fuse Box, Method Of Forming A Fuse Box, And Fuse Cutting Method
App 20070115745 - BYUN; Gwang-Seon ;   et al.
2007-05-24
Integrated circuit devices having corrosion resistant fuse regions and methods of fabricating the same
Grant 7,180,154 - Cho , et al. February 20, 2
2007-02-20
Integrated circuit devices having corrosion resistant fuse regions and methods of fabricating the same
App 20040262768 - Cho, Tai-Heui ;   et al.
2004-12-30

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