Burns; Stuart M.
Patent Applications and Registrations
Patent applications and USPTO patent grants for Burns; Stuart M..The latest application filed is for "anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme".
- Burns; Stuart M. - Brookfield CT
- Burns; Stuart M. - Ridgefield CT
| Patent | Date |
|---|---|
| Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme Grant 6,461,529 - Boyd , et al. October 8, 2 | 2002-10-08 |
| Reactive ion etch loading measurement technique Grant 6,268,226 - Angell , et al. July 31, 2 | 2001-07-31 |
| Field effect transistors with improved implants and method for making such transistors Grant 6,143,635 - Boyd , et al. November 7, 2 | 2000-11-07 |
| Method for making field effect transistors having sub-lithographic gates with vertical side walls Grant 6,040,214 - Boyd , et al. March 21, 2 | 2000-03-21 |
| Low pressure and low power C1.sub.2 /HC1 process for sub-micron metal etching Grant 5,976,986 - Naeem , et al. November 2, 1 | 1999-11-02 |
| Silicon sidewall etching Grant 5,895,273 - Burns , et al. April 20, 1 | 1999-04-20 |
| Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing Grant 5,846,884 - Naeem , et al. December 8, 1 | 1998-12-08 |
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